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Now a days different Junction less Transistor(JLT) structures proposed which includes silicon on insulator(SOI) JLT, Double gate (DGLJT) JLT, Bulk planar JLT, Gate all around(GAA) JLT etc. to improve performance parameters such as sub threshold slope(SS), off state leakage current, drain induced barrier lowering(DIBL) etc. In this paper, JLTs with dual spacer structures shows better improvement as...
The demands and expectations of high performance devices using Field Effect Transistors (FETs) are increased day by day. In order to obtain transistors with smaller size but with increased speed and performance, device scaling was done. However, making transistor in smaller size is not an easy task. One of the challenges with scaling the size of transistor is the short channel effects (SCEs). In order...
Impact of gate underlap in nanoscale ultrathin body Germanium-on Insulator (Ge-OI) MOS transistor is investigated with the help of well calibrated TCAD simulation. Due to higher permittivity of Ge, MOS device with no underlap shows poor short channel immunity. While increasing underlap length significant improvement in short channel immunity is observed. Due to higher channel resistance reduction...
This paper explores the analog/RF performance of cylindrical surrounding double gate (CSDG) MOSFET in comparison to Cylindrical surrounding Gate (CSG) MOSFET for future nano CMOS devices. CSDG MOSFET has more gates on the silicon substrate to control the channel than any contemporary device. This device has one more cylindrical gate than the CSG MOSFET. That extra gate controls the inner core of the...
In this paper, a novel device structure named as partially insulated (Pi-OX) junctionless transistor (JLT) is proposed and the simulated results below 20 nm have been compared with existing silicon-on-insulator (SOI) JLT. Further, drain-induced barrier lowering (DIBL), subthreshold swing (SS), on-state drive current (ION), off-state leakage current (IOFF), ION/IOFF ratio and static power dissipation...
The silicon MOS transistors for VLSI have been scaled down for more than forty years in order to attain higher speed, lower power, higher integration, and lower cost. The gate length is now less than 30 nm. The silicon devices are certainly in the nanometer regime. Fig. 1 shows technology nodes and gate length according to ITRS [1]. It is predicted in the 2009 version of ITRS that the gate length...
A generic surface potential based current voltage (I-V) model for heavily doped asymmetric Double Gate MOSFET is presented. The model is derived from the 1-D Poisson equation with all the charge terms included and the channel potential is solved for the asymmetric operation of DG MOSFET based on the Newton Raphson Iterative method. A non charge sheet based drain current model based on the Pao-Sah's...
In this paper we propose a new model based on an analytical model for undoped symmetric double gate MOSFETs introduced by Chenming Hu et al. The proposed model targets to include the quantum confinement and the most important short channel effects. The new model results were compared with a device simulator results to validate the proposed modifications. The proposed model introduces low fitting error...
In this paper short channel and self heating effects in dopant segregated Schottky barrier (DSSB) silicon-on-insulator (SOI) MOSFET are investigated in sub-30 nm regime using two dimensional MEDICI simulator. In order to suppress these effects novel structures having dopant segregated Schottky source/drain (S/D) with buried oxide (BOX) only under S/D (DSSB Pi-OX) and DSSB Pi-OX with p-type delta doping...
An analytical model is presented for the 3D subthreshold electrostatics of low-doped gate-all-around MOSFETs with circular and square cross sections. The model is based on a solution of the 3D Laplace equation utilizing the high symmetry of the devices and assuming near-parabolic potential distributions in the directions perpendicular to the gates for the central regions. To account for short-channel...
SOI FinFET transistors have emerged as novel devices having superior controls over short channel effects (SCE) than the conventional MOS transistor devices. However despite these advantages, these also exhibit certain other undesirable characteristics such as corner effects, quantum effects, tunneling etc. Usually, the corner effect deteriorates the performance by increasing the leakage current. In...
We present an approach to scale Rext while maintaining control of short channel effects in scaled finFETs. For FETs with fins <;20nm, an enhancement of 19% in drain current was achieved in nFETs by incorporating Al at silicide-Si interface. This Al implantation while reducing the schottky barrier height for n-Si contact by 0.4 eV, does not degrade the integrity of the junction extensions or gate...
In this paper we proposed and did an extensive simulation study of a new SELBOX device using a 2D device simulator MEDICI. The proposed structure retains all the advantages of the SELBOX structure and at the same time reduces SCEs significantly and makes further scaling of the device possible in nanometer regime. The proposed device is a partial ground plane (PGP) based MOSFET on SELBOX.
Capacitance-Voltage (C-V) characteristics of Tri-Gate (TG) and Double Gate (DG) Silicon-on-Insulator (SOI) FinFETs having sub 10 nm dimensions are obtained by self consistent method using coupled Schrodinger-Poisson solver taking into account quantum mechanical effects. Though self-consistent simulation to determine current and other short channel effects in these devices have been demonstrated in...
For ultimate MOSFET scaling, ultra thin body and BOX SOI transistors have become of great interest, as they are known to dramatically reduce short channel effects (SCE) while maintaining very high device performance. In this work, we emphasize the impact of the substrate / BOX interface space charge conditions on the drain induced barrier lowering (DIBL) increase with gate length reduction, as this...
Double gate SBFET with asymmetric barrier heights at source/drain and the symmetric DG-SBFET are simulated. A comparative study between them is made. We have found that the DG-ASBFET is more appropriate for LOP and LSPT applications. Furthermore, the DG-ASBFET shows a better scale ability and better immunity to the short channel effects.
In conclusion, this paper reports a number of significant developments in III-V MOSFET devices. Retaining a subthreshold slope of 60-70 mV/decade for gate lengths down to 100 nm with an EOT of 3.4 nm shows for the first time that the flatband mode device architecture is tolerant to short channel effects. In addition, a generic silicon compatible process flow for the realization of fully self-aligned...
With aggressive MOSFET scaling, short channel effects (DIBL and VTH roll-off), off-state and gate leakage, parasitic capacitance and resistance severely limit the device performance. These, in addition to VDD scaling limitation and high sub-threshold swing (Gt60mv/dec) give rise to high IOFF and make power dissipation, both dynamic and static, an enormous challenge, especially for low power/low current...
This paper demonstrates the integration of Al segregated NiSi/p+-Si S/D contact junction in p-FinFETs for parasitic series resistance reduction. Al is introduced by ion implant into p+ S/D region followed by nickel deposition and silicidation. Drive current enhancement of ~15 % is achieved without any degradation of short channel effects. This is attributed to the lowering of PhiBp of NiSi on p-Si...
This paper presents a compact physical model for current-voltage characteristics of ultra-thin body (UTB) fully depleted (FD) silicon-on-insulator (SOI) MOSFETs in subthreshold region which accounts for quantum confinement effects (QCEs) as well as short channel effects (SCEs). Body region is modeled as an infinite potential well and carrier concentration is calculated accordingly. The model could...
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