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Temperature-insensitive silicon MZI with local heaters is fabricated by DUV lithography. Temperature dependence is less than 5pm/°C but the wavelength can be tuned by the local heater at the efficiency of 24mW/FSR. The results are discussed in comparison with permanent wavelength trimming by thermal annealing.
CMOS-compatibly fabricated silicon athermal MZI is trimmed in wavelength by the amount from −0.15 to −5.15 nm using thermal annealing process over 400 °C. Temperature-dependence less than 2 pm/°C is maintained after the annealing.
Silicon ring resonators have high thermal sensitivity of about 0.1 nm/°C. Using sol-gels as cladding material we show that sensitivity can be reduced down to 2 pm/°C within the temperature range from 12 °C to 40 °C.
A novel all-silicon thermal independent Mach-Zehnder interferometer consisting of two multimode waveguide arms having equal lengths and widths but transmitting different modes is proposed and experimentally demonstrated. The interferometer has a temperature sensitivity smaller than 8pm/°C in a wavelength range of 18nm.
We demonstrate the design, fabrication and characterization of plasmonic enhanced silicon photo-detector for infrared light. Theoretical model, experimental results and comparison between different geometric configurations will be presented and discussed.
We present vertically-stacked a-Si:H and AlN photonic circuits deposited on silicon using back-end CMOS technology. At 1550-nm telecom wavelengths, the a-Si:H (0.5-µm×0.22-µm) and AlN (1-µm×0.4-µm) channel waveguides are measured to have low propagation losses of ∼3.8 and ∼1.4 dB/cm, respectively. Various passive devices with high performance are demonstrated on these two photonic layers, including...
We report performances of III–V/Si distributed feedback lasers at 1310 nm. Continuous wave regime is achieved up to 55°C, with room-temperature threshold of 35 mA, while mode-hope-free operation with side-mode suppression ratio above 55 dB is measured. The −3dB bandwidth is 6.7 GHz.
The temperature dependences of the refractive index and magneto-optic coefficient of magneto-optic garnet Ce: YIG are characterized to be 2.5×10−4 K−1 and 13 deg/cm/K, respectively. The design of a temperature insensitive waveguide optical isolator is proposed.
We observe directly for the first time optical near field in silicon nanophotonics devices with nanoscale resolution using near field scanning thermal microscopy and demonstrated its advantage over the NSOM technique.
Experimental demonstrations of ring resonators with TiO2 cores are presented and measured with −2.9pm/K resonance shift. Their thermo-stress-optic behavior was found to be important to their function; therefore an inclusive model is presented and simulated numerically.
A compact all-silicon Mach-Zehnder interferometer (MZI) filter with temperature sensitivity less than 5pm/ K is demonstrated. The device achieves a reduced footprint by making use of different polarizations.
A comprehensive investigation of silicon microring sensor, which is used for temperature detection, is reported in this paper, and the theory was introduced in detail. Numerical analysis shows that the silicon microring has a high sensitivity and a very good linearity between real-time temperature and effective index. By optimizing the parameters, the microring sensor can obtain a higher sensitivity...
An integrated tunable C band laser fabricated in a commercial CMOS foundry is discussed. The laser is embedded in the silicon chip, and is hermetically sealed. Preliminary optical characterization results are presented.
Owing to the negative thermo-optic coefficient (TOC) of titanium dioxide, the real effective modal index of Cu-TiO2-Si hybrid plasmonic waveguides can be potentially temperature independent. High-performance Cu-TiO2-Si waveguide-ring resonators (WRRs) are experimentally demonstrated on SOI platform using standard CMOS technology. TOC of the group index is measured to be ~1.09×10-4 K-1 for a WRR with...
We report chip-scale electro-mechanical detection of near-IR optical intensity modulation at 174.2MHz and 1.198GHz in silicon. This constitutes the first experimental demonstration of a photon to phonon translator in a CMOS compatible platform.
Silicon-on-nitride waveguides are demonstrated at mid- and near-infrared wavelengths. The fabrication is based on bonding silicon to silicon-on-insulator dies coated with low-stress silicon nitride. At 3.39 μm wavelength, the measured propagation loss is ∼5 dB/cm.
We report on hybrid III–V on Silicon lasers with adiabatic coupling. Fabry-Pérot laser with 16mW output power, integrated racetrack laser and photodetector, as well as widely tunable laser with 45nm tuning range are presented.
We investigate theoretically and experimentally temperature sensors based on asymmetric Fano resonances in integrated silicon Bragg reflectors. A temperature sensitivity of 77pm/°C can be achieved due to thermo-optic effect of silicon.
We study the spontaneous photon scattering that arises in silicon waveguides at low power. Power dependence, temperature dependence, spectrum and response time point out its origin as pump scattering on a thermal bath of excitons.
We demonstrate optical resonators and waveguides monolithically integrated on a CMOS die through post-backend processing. Both CMOS process integrity and optical performance are verified and measured.
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