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PAM-4 transmission is established by modulating two silicon ring modulators in series with two uncorrelated NRZ encoded data sources. The two modulators are thermally tuned to obtain different extinction ratios. 30Gb/s PAM-4 transmissions are achieved with only 1Vpp.
We report performances of III–V/Si distributed feedback lasers at 1310 nm. Continuous wave regime is achieved up to 55°C, with room-temperature threshold of 35 mA, while mode-hope-free operation with side-mode suppression ratio above 55 dB is measured. The −3dB bandwidth is 6.7 GHz.
We used the molecular wafer bonding technique to develop a hybrid widely tunable, monomode III-V/Si laser for wavelength division multiplexing, with a tunability over 35 nm and an output power in excess of 3 mW.
In the absence of practically efficient lasers achievable directly in Silicon or other group IV materials, Si-photonic transmitter sources must be made by "Hybrid integration" of III-V chips or "Heterogeneous integration" with III-V gain materials. "Hybrid integration" technologies consist in integrating processed (and finished) chips in a photonic microsystem. One commercial...
We evaluate the performances of optical interconnects that could be built up from our current CMOS-Photonics-devices library (monolithically integrated III-V-on-Si-lasers, ring-modulators, photo-detectors, and tunable ring-filters). Two operating temperatures are considered.
We report on a III-V on Silicon distributed Bragg reflector laser with adiabatic coupling operating continuous wave at 1547 nm. The lasing threshold at 20 °C and the maximum output power are 17 mA and 15 mW, respectively. The fiber-coupled power is higher than 4 mW. The device is directly modulated and generates open eye-diagram up to 12.5 Gb/s.
Record transmissions with the direct modulation of a 1550nm-hybrid III/V-on-Silicon laser of 21.5Gbps in optical back-to-back (B2B) and 12.4Gbps over 50km of Single-Mode Fiber (SMF) are achieved. Neither optical amplification, nor optical dispersion-compensation is used.
We report on hybrid III–V on Silicon lasers with adiabatic coupling. Fabry-Pérot laser with 16mW output power, integrated racetrack laser and photodetector, as well as widely tunable laser with 45nm tuning range are presented.
The high-order Quadrature Amplitude Modulation (QAM) of a III–V-on-Silicon laser is achieved for the first time, through Orthogonal Frequency Division Multiplexing (OFDM), allowing a 12.6Gb/s-transmission with a 4GHz-bandwidth.
We report on hybrid Si/III–V lasers with adiabatic coupling. The proposed architectures, based on adiabatic mode transformers, allow laser mode to experience maximal gain available in the III–V region while maintaining a high coupling efficiency (>95%) to Si-waveguides. Hybrid Fabry-Pérot and racetrack lasers are presented.
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