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We present a DC-AC Hall-effect analysis on transition-metal-dichalcogenides comprising natural crystals of molybdenum disulfide and tungsten diselenide; and synthetic crystals of hafnium diselenide, molybdenum ditelluride, molybdenum diselenide and niobium-doped molybdenum disulfide. We observe a wide range of Hall mobility and carrier concentration values with either a net electron or hole carrier...
By means of PBW (Proton Beam Writing) technology doped by phosphorus Si monocrystal was irradiated. The energy of ions H+ was 1.5 MeV. The integrated dose was 2∗1015 p/cm2. This treatment of the sample led to modification of the electrical properties of the material. Two layers were appeared under the surface of the silicon. The first one had higher resistivity than non-irradiated Si. The second one...
3D ICs involve interconnected ICs as they contact each other by means of through-silicon-vias (TSVs). Although it is a cheap process and suitable to mass production, the conventional sputtering method has not been widely used to fabricate high aspect ratio vias due to its more or less rectilinear propagation property. In this study, the effect of sputtering conditions on the growth mechanism of seed...
Cr/CrN nano-multilayers have been produced by varying the period and the degree of unbalancing in a magnetron sputtering system in order to study the influence of these parameters in the electrical properties. X-ray Diffraction (XRD) was used to investigate the microstructure characteristics of the multilayers and the Four Point Probe (FPP) technique in the Van der Pawn mode was used to evaluate electrical...
This paper is to investigate correlation between doping technique towards diffusion rate and oxide growth rate. There are two types of doping technique that has been investigated such as Solid Source, SS and Spin on Dopant, SOD. Four inches wafers were used to investigate the effects of doping technique towards diffusion rate and oxidation rate. The resistivity of silicon substrate is measured by...
The boron-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited by plasma enhanced chemical vapor deposition (PECVD). The microstructures of boron-doped nc-Si:H films were characterized and analyzed by Raman spectrum and atomic force microscopy(AFM). The thickness of the films was measured by high-resolution profilometer. The resistivity of the films was measured by four-point...
We applied partial conversion as initial silicidation to control the morphologies of Ni-Pt silicide, viz., the thickness, crystal grain, and Pt concentration of the Ni-Pt silicide. This partial conversion kept the thickness of Ni-Pt silicide constant regardless of the device pattern, i.e., by controlling silicidation with thermal diffusion. The key to partially converting Ni-Pt silicide was leaving...
In polarized layer the formation resistivity is a complex number that depends on the frequency, but in conventional MT method the formation resistivity is usually considered as a real parameter that is independent of the frequency. Based on Dias model, Studying the basic theory and method of Extract the IP parameters from MT data, Giving a new method to calculate wave impedance at different frequency;...
A robust design of RF MEMS capacitive shunt switches was implemented with a movable gold membrane, separate and non-contacting actuation pads, and electrostatic actuation. The same design was fabricated on silicon and quartz substrates with different combinations of dielectric constant, resistivity, thermal conductivity, and thermal expansion coefficient. It was found that most switches could operate...
The resistivity of a quasi-one-dimensional structure fabricated without masks by 20-keV Ga+ focused ion beam (FIB) on crystalline Si substrates was investigated for the first time, along with an analysis of properties of implanted p+ layers. The junction depth of the 7?? off-axis implanted layer after annealing, which was measured by stain method, is 410 nm. The distribution profile was investigated...
This paper presents the effect of various doping concentration of BF2+polysilicon from 1011 to 1020 (atoms/cm3) for PMOS device using SILVACO TCAD (Technology Computer Aided Design) software. The threshold voltage of polysilicon obtain from ID-VGS curve was analyzed. The results show that BF2+ at dose 1014 to 1019 (atoms/cm3) giving the better characteristics of the PMOS at the threshold voltage...
The microstructure and electromagnetic properties of FeCoB-SiO2 thin films which were deposited on different substrates (silicon, glass and Mylar) by using magnetron sputtering were studied. X-Ray Diffraction revealed that FeCo nanocrystalline only precipitated in FeCoB-SiO2 thin films on silicon and glass substrates, and the FeCoB-SiO2 films on Mylar substrate were amorphous. The surface images obtained...
Using direct-write approaches in photovoltaics for metallization and contact formation can significantly reduce the cost per watt of producing photovoltaic devices. Inks have been developed for various materials, such as Ag, Cu, Ni and Al, which can be used to inkjet print metallizations for various kinds of photovoltaic devices. Use of these inks results in metallization with resistivity close to...
Screen-printing is widely used today as the metallization technique for industrial solar cells. Due to the limitation of the process, screen-printed contacts have low aspect ratio and low line conductivity that lower the efficiency of the solar cells. To address this issue, we developed a two-layer metallization process that deposited copper (Cu) as current-carrying electrodes by light induced electroplating...
The present paper focuses on the study of electrical and physico-chemical properties of films deposited by Low Pressure Chemical Vapor Deposition or (LPCVD). These films are composed of two layers, boron doped polysilicon (polySi) and nitrogen doped polysilicon (NIDOS). The results indicate that the resistivity values increases versus increasing of the annealing duration, this can be explained by...
This work presents the influence of post-annealing on mechanical and electrical properties of boron-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited on Corning 7059 glass and Si substrate by plasma enhanced chemical vapor deposition (PECVD) technique. The basic mechanical properties of the films are measured by means of nanoindentation system. Using a four point resistivity...
Vapor-liquid-solid (VLS) growth, using Si2H6 as the gas source of Si, can be used to realize intrinsic Si microprobe arrays, which could be doped by diffusion process (at 1100degC) after VLS growth. But in this work we have demonstrated that by incorporating in-situ doping using the gas source of Si2H6 and PH3 with VLS growth process, doped n-Si microprobes can be realized directly at a temperature...
Polycrystalline silicon (polysilicon) has been used as an important structural material for microelectromechnical systems (MEMS) because of its compatibility with standard integrated circuit (IC) processes. As the structural layer of micromechanical high resonance frequency (high-f) and high quality factor (high-Q) disk resonators, the low residual stress and low resistivity are desired for the polysilicon...
This work investigated the electrical and morphological properties of nitrogen doped silicon (NIDOS) thin films. The samples are obtained by LPCVD at low temperature (465degC) by a mixture of disilane (Si2H6) and ammonia (NH3). This stage of deposit is followed by a heat treatment at several temperatures and durations. The resistivity measurements showed an increase in the resistivity values with...
Light induced degradation (LID) in boron doped Czochralski (Cz) silicon with high oxygen content is known to degrade solar cell efficiency. Multicrystalline Si crystals also have oxygen and use B doping, but LID effects are largely unknown. In this paper, ribbon, Cz, and cast multi-crystalline Si crystals with a resistivity of 1-3 /spl Omega/cm were investigated for LID. 15-16% efficient EFG, String...
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