The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Ohmic and low-resistance electrical contacts on silicon carbide have been demonstrated for the first time up to very high temperature (800°C) in an oxidizing environment. A specific contact resistance of about 2 × 10−4 Ω.cm2 was achieved after silicidation at 900°C. Long term aging tests in an oxygen atmosphere were performed, demonstrating ohmic behavior up to 1000 h at 550°C and over 4 h at 800...
Atomic-scale computational materials engineering offers an exciting complement to experimental observations, revealing critical materials property data, and providing understanding which can form the basis for innovation. This contribution reviews the current state of atomic-scale simulations and their capabilities to predict mechanical, thermal, and electric properties of microelectronics materials...
Silicon carbide (SiC) is a IV-IV compound semiconductor material with a wide band gap. Semiconductor electronic devices and circuits made from SiC are presently being developed for high-temperature, high-power, and high-radiation conditions in which conventional semiconductors can not adequately perform. In this study, 3C-SiC micro-pillar arrays were fabricated on Si substrate by chemical vapor deposition...
Platinum and nickel contacts with and without silicon addition were prepared and compared on 4H and 6H silicon carbide. After deposition, samples were gradually annealed up to 1150degC. Si addition into Pt contact was beneficial for decreasing of contact resistivity on 4H-SiC, but on 6H-SiC the effect was negligible. In the case of Ni-based contacts, the influence of Si was more pronounced for samples...
Silicon MEMS as electrostatically levitated rotational gyroscope and 2D optical scanner, and wafer level packaged devices as integrated capacitive pressure sensor and MEMS swatch are described. MEMS which use non-silicon materials as diamond, CNT (carbon nano tube), LTCC with electrical feedthrough, SiC (silicon carbide) and LiNbO3 for multi-probe data storage, multi-column electron beam lithography...
Polish Government Program ldquoNew technologies based on silicon carbide and their applications in high frequency, high power and high temperature electronics rdquo covers an project package that consists of three general tasks. The contribution presents the overview of projects in the field dealing with the design and manufacturing of power SiC semiconductor devices.
We report, for the first time, a simple and cost effective co-integration of strained p and n-FETs using tin (Sn) and mono-carbon (C) implant in Source/Drain (S/D) of p- and n-FETs, respectively, to induce beneficial strain. For the first time, a single laser anneal step was employed to substitutionally incorporate the Sn and C atoms simultaneously into lattice sites. 7 at.% substitutional Sn concentration...
Cooling is important to keep the temperatures of the highly integrated silicon electronic devices and power devices e.g. power MOSFET, IGBT. Yamaguchi et al. have proposed a new scheme to cool down the devices by its own current named ldquoself-cooling devicerdquo, in which the cooling process uses Peltier effect. In the proposed scheme, we should use the materials that have high thermal conductivity,...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.