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P-doped silicon rich oxide (SRO) /silicon dioxide (SiO2) superlattices, deposited by sputtering method under different substrate temperatures, were treated using conventional furnace annealing or rapid thermal annealing (RTA). Raman and X-ray diffraction (XRD) were used to characterize the samples. Results show larger nanocrystal size is formed by furnace annealing than by RTA. High crystallinity...
In this work a very low cost and conventional technique was used to prepare Ge nano/microstructures by means of filling the material inside porous silicon (PS) using thermal evaporator. PS was prepared by anodization of Si wafer in ethanoic hydrofluoric acid (HF).The Ge layer was deposited onto the PS by thermal evaporation.Subsequent annealing at 650°C and 750 C for 30 mins were done to drive in...
This paper reports on the preparation of nano-structured of MgxZn1-xO thin films by sol-gel spin coating method which will be used as a template layer to grow carbon nanotubes. The MgxZn1-xO films were deposited on Pt/Si (100) substrates. In this work, we focused on the effect of sol aging and Mg content on the film structure and resistivity. Sols with Mg content of x = 0.1, 0.3 and 0.5 were subjected...
Cr/CrN nano-multilayers have been produced by varying the period and the degree of unbalancing in a magnetron sputtering system in order to study the influence of these parameters in the electrical properties. X-ray Diffraction (XRD) was used to investigate the microstructure characteristics of the multilayers and the Four Point Probe (FPP) technique in the Van der Pawn mode was used to evaluate electrical...
The paper presents the results of emission efficiency comparison in crystalline and amorphous Si nanoclustes. Using X-ray diffraction (XRD) and photoluminescence (PL) methods the correlation between different PL bands and the volumes of Si nanocrystals and an amorphous (a-Si:H) phase have been revealed The size parameters of amorphous (a-Si:H) nanoclusters (quantum dots) and Si nanocrystals have been...
In this paper we present results of SEM, XRD and EXAFS studies of palladium-carbon nanostructural films prepared in two-steps method on pure and oxidized silicon substrates. Structural, topographical and morphological differences were found between films deposited on those substrates.
In this work, we present the fabrication and the structural and electrical characterization of quantum confined silicon nanodots for advanced 3rd generation photovoltaic cells. Silicon permits its bandgap control by forming quantum confined nanocrystals in SiO2 (diameter <; 10 nm) and allowing a bandgap of more than that of the bulk (1.1 eV). We examine the properties of such films of SiO2 with...
With the advancement of technology, the semiconductor materials are fabricated with ever shrinking size in order to reduce space and weight while at the same time benefiting from the improved performance such as high speed and low operating power. Recently found phenomena called, quantum confinement (QC) effects related to semiconductor material reaching the size in nanometer scale, only added to...
Nano-layered films of Cu/Cu(Zr)/Zr(Ge) and Cu/Cu(Zr) were deposited on the Si/SiOC:H substrates by magnetron sputtering. Samples were subsequently annealed at temperatures ranging from 350~500??C in vacuum, and characterized by four-point probe technique, glancing incident angle X-ray diffraction, Auger electron spectroscopy (AES) and transmission electron microscopy. The results indicated that the...
This work explored a novel way to synthesize silicon carbide (SiC). Carbon ions at tens of keV were first implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using heavy xenon ion beams at high energy of 4 MeV with fluences of 5 ?? 1013 and 1 ?? 1014 ions/cm2 at elevated temperatures to play a role of annealing as an alternative of high-temperature thermal...
This paper reports the grown of Ni/Cu multilayers on Si monocrystalline substrates and shows some polarization investigations of Si(100) substrates. Nano structural characterization of the multilayers by high angle X-ray diffraction (XRD) and high temperature X-ray diffraction (HT-XRD) also have been presented. Annealed Ni/Cu multilayers on Si(100) substrate has been reported. The main purpose of...
Silicon and its related alloys deposited by catalytic chemical vapor deposition (Cat-CVD), takes place upon thermo-catalytic decomposition of the reactant gases, i.e. silane (SiH4) and hydrogen (H2), at the surface of a hot filament. Tantalum (Ta) has been used as catalyst which resulted with better controllability from amorphous to crystalline-phase transition. Process for depositing hydrogenated...
The microstructure and electromagnetic properties of FeCoB-SiO2 thin films which were deposited on different substrates (silicon, glass and Mylar) by using magnetron sputtering were studied. X-Ray Diffraction revealed that FeCo nanocrystalline only precipitated in FeCoB-SiO2 thin films on silicon and glass substrates, and the FeCoB-SiO2 films on Mylar substrate were amorphous. The surface images obtained...
Hydrogenated silicon (Si:H) thin films were deposited at a selected argon diluting ratio under varied RF power density and the influence of it on nanocrystallization was studied by XRD, FTIR and Raman spectroscopy.
The structure of hydrogenated amorphous silicon (a-Si:H) thin films embedded with nano-crystal grains deposited by conventional radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) through decomposition of silane diluted with argon has been studied by X-ray diffraction (XRD), Fourier transform infrared (FTIR) and Raman spectroscopy. It is observed that argon as dilution gas plays...
In this paper, ZnO nanorods were synthesized by the hydrothermal process on various substrates such as glass, ITO, p-type porous silicon and n-type porous silicon by dipping in ZnO solution and atomic layer deposition method. The thin films a grown on substrates were washed with deionized water to eliminate residual salts, dried in air, and annealed at 400 degC. Scanning electron microscopy and X-ray...
Inductive heating method was used to synthesis regular tetrapod-like zinc oxide within 1 minute in the air. The synthesis of the nanostructure was interpreted by the Vapor-Solid (VS) growth mechanism. The nanostructure was verified to be pure ZnO nanostructure by X-ray diffraction (XRD) spectrum. Field emission measurement was applied to prove that it owns low turn-on field and large emission current...
To further enrich aluminum content in coal fly ash so as to reduce the cost of it as a resource for industrial aluminum extraction, a novel process was developed to separate silicon from the rest of fly ash. The process was conducted by treating the coal fly ash with high concentration sodium hydroxide solution to dissolve silicon as sodium silicate at room temperature under atmosphere. The sodium...
The aim of the work was to study the effect of postgrowth thermal annealing processes on the characteristics of the zinc oxide films grown on silicon substrates by dc reactive magnetron sputtering. The growth temperature of the ZnO thin films was fixed at 230degC and then the samples were annealed in dry air atmosphere at 800degC for one hour. The surface of the ZnO samples was analyzed with a scanning...
SiGe/Si heterogeneous nanostructures were prepared by electrochemical anodization of SiGe/Si MQWs. Structural and optical properties of the materials were characterized. The origin of the photoluminescence from the heterogeneous nanostructures at room temperature is discussed.
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