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This paper reports on the preparation of nano-structured of MgxZn1-xO thin films by sol-gel spin coating method which will be used as a template layer to grow carbon nanotubes. The MgxZn1-xO films were deposited on Pt/Si (100) substrates. In this work, we focused on the effect of sol aging and Mg content on the film structure and resistivity. Sols with Mg content of x = 0.1, 0.3 and 0.5 were subjected...
In this paper, ZnO nanorods were synthesized by the hydrothermal process on various substrates such as glass, ITO, p-type porous silicon and n-type porous silicon by dipping in ZnO solution and atomic layer deposition method. The thin films a grown on substrates were washed with deionized water to eliminate residual salts, dried in air, and annealed at 400 degC. Scanning electron microscopy and X-ray...
Inductive heating method was used to synthesis regular tetrapod-like zinc oxide within 1 minute in the air. The synthesis of the nanostructure was interpreted by the Vapor-Solid (VS) growth mechanism. The nanostructure was verified to be pure ZnO nanostructure by X-ray diffraction (XRD) spectrum. Field emission measurement was applied to prove that it owns low turn-on field and large emission current...
The aim of the work was to study the effect of postgrowth thermal annealing processes on the characteristics of the zinc oxide films grown on silicon substrates by dc reactive magnetron sputtering. The growth temperature of the ZnO thin films was fixed at 230degC and then the samples were annealed in dry air atmosphere at 800degC for one hour. The surface of the ZnO samples was analyzed with a scanning...
Coalescence overgrowth of GaN nanocolumns on Si and sapphire substrates with metalorganic chemical vapor deposition is implemented to show high crystal and optical qualities. Depth-dependent X-ray diffraction is realized to understand the coalescence growth process.
SiC nanocrystals growth through the surface reaction between spin-on C60 dissolved in Carbon Disulphide (CS2) and Si substrate and 800degC (100 rains.) annealed has been investigated. Scanning Electron and Atomic Force Microscopy showed the crests of C60 clusters formed preferentially on the Si substrate steps with 40-60 nm cluster sizes. Silicon carbide nanocrystallite formation after anneal. has...
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