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Two types of NC NVM structures had been tested for W/E window formation, charge relaxation and retention. It was shown that the difference between two structures types is significant.
A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and isolated NC was formed by depositing a mixed solution of nickel tetrachloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride with a post-rapid thermal annealing process. The electrical properties in terms of memory window, charge retention, program/erase speed, and endurance...
MOS capacitor structure with double-layer heterogeneous nanocrystals consisting of metal and semiconductor embedded in gate oxide for the applications of nonvolatile memory have been fabricated and characterized. By combining the self-assembled Ni nanocrystals and vacuum electron-beam co-evaporated Si nanocrystals in SiO2 matrix, the MOS capacitor with double-layer heterogeneous nanocrystals can appear...
The increasing use of portable electronics and embedded systems has resulted in the need for low-voltage, high-density nonvolatile memory devices. Nanocrystal memories, utilizing the Coulomb blockade effect, have the potential to satisfy such a requirement. The primary motivation in the use of nanocrystal memories is the potential to scale the tunnel dielectric thickness to a small dimension, resulting...
The gradual Ge1-xSix/Si heteronanocrystals on ultra thin SiO2 were fabricated to form the metal-oxide-semiconductor (MOS) memory structure with asymmetric tunnel barriers through combining self-assembled growth and selective chemical etching technique. Charge storage characteristics in such memory structure have been investigated by using capacitance-voltage measurements. The observations demonstrate...
Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N4 control layer and SiO2 or Si3N4 tunnel layers. It was obtained that a properly located layer of Si nanocrystals improves the charging behaviour of the MNOS structures. Memory window width of about 6.6 V and retention time of 41 years has been achieved for charging...
Si quantum dots (QD) embedded into Gd2O3 and Si quantum wells (QW) with epitaxial Gd2O3 as the barrier layers were grown on Si substrates. With decreasing dot size down to the 2-nm range, the optical absorption exhibits a spectacular shift in spectral threshold upto 2.9plusmn0.1 eV, as compared to the 1.12 eV absorption edge of the bulk Si crystal. Such shift suggests a significant influence of quantum...
High-density nonvolatile memory applications can benefit tremendously from three-dimensional (3D) integration with low power consumption. Among several proposals, the planar polysilicon thin-film transistor (TFT) with metal nanocrystals (NCs) and high-k gate-stack is one of the promising candidates. Metal NCs were introduced to allow thin tunnel dielectric, lower the program/erase (P/E) voltage and...
The integration of silicon nanocrystal (Si-nc) nonvolatile memory (NVM) arrays with HfAlOx based interpoly dielectric (IPD) is presented for the first time. The data obtained on array vehicles programmed in Fowler-Nordheim operation regime are in excellent agreement with previously presented results on single cells, as well as theoretical data and allow the evaluation of the scalability of the Si-nc...
Memory structures based on InAs nanocrystals directly grown by molecular beam epitaxy (MBE) on SiO2 have been studied. The nanocrystals have a typical diameter of 5 nm and the density is about 2 times 1011 cm-2. High resolution TEM measurements have shown high crystalline quality and low size dispersion. Using these 7 nm-quantum dots, a test structure with a 3.5 nm-thick SiO2 tunnel oxide and a 10...
This paper demonstrates the integration of Au nanocrystals (NCs) into nonvolatile metal-oxide-semiconductor (MOS) with a hybrid method operated at room temperature. The comparison of structural and electrical characteristics between the hybrid Au NCs fabricated by chemical syntheses and film deposition Au NCs fabricated by rapid thermal annealing (RTA) was carried out. The size of the Au NCs formed...
Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N4 control layer and a SiO2 or a Si3N4 tunnel layer. It was obtained that the charging behaviour of structures with SiO2 tunnel layer was better than with Si3N4 tunnel layer
Electron transport and photonic properties of silicon nanocrystals prepared by plasma decomposition of silane are described with particular emphasis on silicon nanocrystals memory, microscopic charge measurement by KFM, NEMS devices, and silicon photonic devices
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