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Two numerical simulation techniques are presented to investigate the heating issues in nanoscale Si devices. The first one is the Monte Carlo simulation for both electron and phonon transport, and the transient electrothermal analysis is carrier out in n+-n-n+ device with the n-layer length of 10 nm. The second is the molecular dynamics approach for simulating the atomic thermal vibration in the nanoscale...
An experimental method is proposed to extract the channel hot-electron (CHE) energy (φe) in the nano-meter-scaled metal-oxide-semiconductor field-effect transistors (MOSFETs). Accelerated by localized electric field in the drain induced channel depletion region, the CHEs obtain larger kinetic energy than the other unaccelerated channel electrons, and they gain greater probability of tunneling through...
This paper presents an overview of the technological challenges facing the future scaling of device dimensions needed to meet the performance scaling in accordance with Moore's law. A number of performance boosters have to be introduced in order to keep up with the expected performance gain in each new technology node. The introduction of strain engineering is an important feature as well as the implementation...
Performance limit of Tri-Gate (TG) and Double Gate (DG) SOI FinFETs have been compared in terms of ballistic current which is calculated using a modified model shown for conventional MOSFET. Such a simple model for calculating ballistic current in nanoscale multigate MOSFETs is yet to be reported. Comparison of the ballistic current for different Si fin thicknesses reveals that for decreasing fin...
For the first time, CMOS TFTs of 65 nm channel length have been demonstrated by using a novel microwave dopant activation technique. A low temperature microwave anneal is demonstrated and discussed in this study. We have successfully activated the poly-Si gate electrode and source/drain junctions, BF2 for p-MOS TFTs and P31 for n-MOS TFTs at a low temperature of 320??C without diffusion. The technology...
A comparison is presented of the results obtained by two transmission electron microscopy (TEM) techniques, CBED and the new electron holographic technique HoloDark, on two selected structures in which the Si crystal has been stressed by two different means. First, we focus on a real transistor in which the Si channel is stressed by recessed SiGe source and drain, then, we report on results obtained...
We report a new nanodot MOSFET, based on the use of Bulk wafer and Silicon-On-Nothing technology, requiring neither CMP nor extra photo-lithographic step. SRAM-application oriented nanodot devices were fabricated using this new process. Record performance among the nanometric gate-all-around MOSFET state-of-the-art is obtained thanks to a high quality transport.
The continuous device scaling and performance improvements required by the International Technology Roadmap of Semiconductors (ITRS) are facing a grand challenge as conventional Si CMOS scaling comes to its fundamental physical limits. We review the research progress recently at Purdue University using In-rich InGaAs and epitaxial graphene on SiC as the novel channel materials for post Si CMOS applications...
Metal-oxide-semiconductor field effect transistor (MOSFET) memories with self-aligned hetero-nanocrystals (TiSi2/Si and Ge/Si) as the floating gates were fabricated and characterized. Better performances were found in hetero-nanocrystal memory, including longer retention time, larger storage capability and improved writing efficiency.
We investigate the physical mechanisms that compromise the modulation speed of electroluminescence (EL) from silicon nanocrystals (Si-nc) embedded in the gate oxide of field effect transistors. A rate equation that explicitly includes an Auger term proportional to the charge density in the silicon nanocrystal layer is used to study the observed modulation. It is found that the main frequency limitation...
I-V characteristics of PD (partially-depleted) NMOS transistors with GAA (gate-all-around) structure fabricated on SIMOX which is hardened by silicon ions implantation were discussed under total-dose irradiation of three bias conditions. It is found experimentally that irradiation-induced threshold voltage shift DeltaVth and leakage current of hardened transistors was greatly reduced, comparing to...
It is shown that sub-0.1 mum Si nanocrystal bulk MOSFET with thin SiN tunnel insulator is a very strong random noise source used in high-rate small-size random number generation circuit, which is required for cryptograph application in mobile network security. A fast random number generation rate of 0.12 MHz is demonstrated using Si nanocrystal MOSFET and a simple small circuit. It is suggested that...
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