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Gene Expression Networks (GENs) attempt to model how genetic information stored in the DNA (Genotype) results in the synthesis of proteins, and consequently, the physical traits of an organism (Phenotype). Deciphering GENs plays an important role in a wide range of applications from genetic studies of the origins of life to personalized healthcare. Probabilistic graphical models such as Bayesian Networks...
ReRAM devices show potential for in memory computing systems due to their capability to both store and process data via implication logic. This type of logic, which is typically implemented using the set transition, could offer reliability and performance advantage if implemented with reset switching of the device. However, the gradual transition of the reset makes it impractical. This paper presents...
In this paper, the properties and performance evaluation of a novel ultra wide band gap device using Ga2O3 material is presented. Although Ga2O3 device is currently at its early development stage, the material and existing devices have shown tremendous potential in high power applications. The properties of Ga2O3 based on both theoretical limits and state-of-the-art prototypes for high power applications...
Two gallium oxide (Ga2O3) MOSFETs, a non field plated (NFP) device and a field plated (FP) device, are proposed and simulated in Silvaco TCAD. The static characteristics of the devices were obtained from Silvaco TCAD and the characterization of switching performance was conducted in Silvaco mixed-mode with inductive load test circuit. To study the influence of the thickness of the field plate oxide...
In this paper, we introduce an opportunistic networking protocol, denoted as NOPPoS, that assigns station and access point roles to mobile devices based on the number of mobile devices and access points in the proximity. As main novel feature, NOPPoS is highly responsive to node mobility due to periodic, low-energy scans of its environment. In fact, NOPPoS can determine the exact number of neighbors...
The switching surge occurs due to the transient phenomenon in the opening and closing operation of the high voltage circuit breaker. It puts a strain on the circuit breaker components. The controlled switching device for high voltage circuit breaker reduces the contact wear and the stress applied to the component by minimizing the switching surge by controlling the contact moment during the switching...
This paper investigates the failure mechanism of Ultra High Voltage JFET (UHV-JFET) under Unclamped Inductive Switching (UIS) test. We explain the ruggedness failure of the Power MOSFETs based on drain impact ionization event, diffusion current flowing through the impact ionization area enhancing the impact ionization level. An optimum drain engineering technique based on device structure and implantation...
The bipolar resistive switching properties of the CBRAM device are investigated for nonvolatile memory applications in a SiO2/ZrO2/SiO2 structure. The device shows good switching characteristics with set/reset voltages less than + 1 V/−1 V with a variation of less than 0.2 V. The SiO2/ZrO2/SiO2 tri-layer CBRAM device exhibits excellent memory performances, such as stable DC endurance up to 103 cycles...
Power switch devices which base on wide band-gap (WBG) semiconductor, such as silicon carbide metal-oxide-semiconductor-field-effect-transistor (SiC MOSFET) and gallium nitride high-electron-mobility transistor (GaN-HEMT) perform superior performance as compared with silicon (Si) MOSFET in high switching frequency, high blocking voltage, and high temperature operation. In this paper, a series of characteristic...
In this work, we provide early insight into the combined tradespace for both power switching and RF applications afforded by the high critical, electric-field strength of β-Ga2O3. MOSFETs formed by homoepitaxial growth of β-Ga2O3 films doped with Sn, Si, and Ge on bulk substrates have been characterized electrically. Several key milestones have been achieved such as enhancement-mode operation >...
The aim of this paper is to investigate the performances of a novel Super Junction (SJ) MOSFET in a PFC converter application. The MOSFET device has a SJ structure with deep trenches to lower the on state resistance per unit area. The area of application is in the field of DC-DC single-switch converters, and bridge conversion with zero voltage switching. The improved design leads to a noticeable conduction...
Recently developed press-pack IGBT (PPI) modules, which feature higher voltage rating, larger thermal capacity, faster switching speed and easy utilization in series, have become a serious competitor with solder plastic IGBT modules in the field of voltage-source-converter based high-voltage-direct-current (VSC-HVDC) transmission systems. To give a comprehensive investigation of press-pack IGBT modules,...
Conventional silicon (Si) based power devices are commonly used in industrial battery charging applications. In most cases, fast switching operation is desired in such applications in order to have a compact power converter system in terms of size and weight, while in contrast, it drives for large switching losses. The maturity of wide bandgap (WBG) technology provides enormous opportunities to ameliorate...
Power semiconductor devices made with wide-bandgap (WBG) materials such as Silicon Carbide (SiC) are improving the energy conversion efficiency, power density, and switching performance of converters. This paper presents a comparative performance evaluation of Si IGBT, SiC JFET, and SiC MOSFET power devices implemented in an otherwise identical, non-isolated dc-dc boost converter. Switching characteristics...
Outstanding efficiencies can be achieved by the utilization of the latest technology of low voltage, SMD-packaged Si- or GaN-based semiconductors. These devices allow a heatsink- and fan-less converter design, thus lightweight and high power density converters are typically derived. This paper investigates the advantages of using these relatively low cost SMD-packaged devices in medium power industrial...
Optical backbone operators need to meet the availability requirements specified in the Service Level Agreements (SLAs). While less stringent availability constraints, i.e., less than three 9's might be met by provisioning connections without any protection, more stringent requirements, i.e., five 9's, force operator to use proactive protection strategies. The connection provisioning process becomes...
Network function virtualization (NFV) is a concept aiming to achieve telecom grade cloud ecosystem for new generation networks focusing on Capital and Operational expenditure (CAPEX and OPEX) savings. Keeping at least the same performances is one of the main requirements of the applications when being virtualized. This work presents a performance impact of Open Virtual Switch (OVS) user-space forwarding...
This paper presents a comparison of two identical gallium nitride (GaN) cascode transistors with different TO-220 packaging configurations. The transistors were analyzed using a precision frequency domain impedance analyzer; and lumped, per-terminal estimates were developed for the parasitic package inductance of each device. It was found that the devices have different per-terminal lead inductances,...
In this paper, we outline the performance enhancement at low current (10 μA) introduced by implementing CBRAM devices were the solid electrolyte is made of two layers with different Cu mobility, enabling to form a hourglass-shaped conductive filament. With such a filament configuration, the CBRAM devices combine a large memory window with high writing speed (10 ns) and a write endurance of 106 cycles,...
We present a multiscale modeling platform that exploits ab-initio calculation results and a material-related description of the most relevant defect-related phenomena in dieledtrics (charge trapping and transport, degradation and atomic species motion) to interpret and understand the electrical characteristics of OxRAM memory devices for non-volatile memories and neuromorphic applications. Simulation...
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