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Via last TSV (through silicon via) technology is more and more applied in 3D WLCSP, which can decrease package volume and increase I/O density. The process of via last includes temporary bonding, grinding, photolithograph, silicon etching, SiO2 etching, CVD, PVD, plating and so on. Silicon etching and SiO2 etching are important process of via last TSV package for interconnect technology. Temporary...
Silver (Ag) has been emerging as an attractive die-attach material for high power devices because of its highest thermal conductivity among metals and high melting stability. The most well-known silver die-attach technique is to sinter micro-or nano-silver pastes. The challenging issues of sintered Ag joints are pores in the joint and migration of unfriendly species such as chlorine ions through these...
Handheld consumer electronics are requiring more complex packaging designs to accommodate higher component densities and reduce form factor. Fan-out wafer-level packaging (FOWLP) has garnered much attention lately as a cost-effective way to achieve high interconnect density and manage larger I/O counts within an affordable package. Two principal approaches to manufacturing FOWLP components have evolved:...
Cu-Cu direct bonding under help of direct immersion gold (DIG) for multi-die fan-out wafer level package was demonstrated. Cu-Cu direct bonding is a critical technology for high-frequency applications. To solve challenges of conventional methods, the DIG was used. As a result, a cohesion failure was obtained in shear test.
For ultra-fine pitch and high density Cu pillar low temperature bonding (200°C), the surface contact between substrate and Cu pillar array is the key. Therefore, the fabrication quality of copper bump array affects severely the bonding results. The qualitative factors include (1) Cu pillar array height uniformity, (2) free of copper oxide layer, (3) Cu material property (e.g. elastic modulus, grain...
Direct Cu-Cu bonding has been pursued by the semiconductor industry as the next interconnection node, for its superior power-handling capability, thermal stability and reliability as compared to traditional solders. However, manufacturability of Cu interconnections has so far been severely limited by the relatively high modulus of Cu, requiring costly planarization processes to address non-coplanarities...
Promoted by the component miniaturization trend, three-dimensional integration appears as a promising option for implementation of the next generation of integrated circuits. In this context, copper is still an interesting material to be integrated to vertical interconnexion through direct metal-metal bonding processes. However, it was already reported that voiding phenomena occur in bonded copper...
Temporary bonding and release processes are regarded as the critical technologies in 2.5D and 3D IC integration. The process is especially challenging when the device contains high topography structures like copper pillar bumps. This paper presents the results of simulation, bumping process, wafer temporary bonding, thinning and debonding. Through careful consideration and optimization of the above...
This paper presents the first demonstration of a high-throughput die-to-panel assembly technology to form Cu interconnections without solder at temperatures below 200°C. This interconnection technology, previously established with individual single-chip packages on both organic and glass substrates, at pitches down to 30μm, is brought up to a significant manufacturable level by two major innovations:...
A three-layer-stacked wafer with CMOS devices was fabricated by using hybrid wafer bonding and backside-via-last TSV (7-µm diameter/25-µm length) processes. Successful fabrication of this wafer confirmed that copper/polymer hybrid wafer bonding brings seamless copper bonding in face-to-face (F2F) and back-to-face (B2F) configurations. The low capacitance of the TSVs results in the highest level of...
Temporary bonding and release processes are regarded as the critical technologies in 2.5D and 3D IC integration. The process is especially challenging when the device contains high topography structures like copper pillar bumps. This paper presents the results of simulation, bumping process, wafer temporary bonding, thinning and debonding. Through careful consideration and optimization of the above...
We present a novel approach to bound any substrate on a silicon host platform, in the particular case of the realization of InP based vertical cavity surface emitting lasers (VCSEL). This process is based on a mechanical bonding, using electroplated copper through silicon vias. It enables a cost effective bonding with a low induced stress, and a significant improvement of the device thermal properties...
We reported a wafer level through-stack-via (TSV) integration approach for stacked memory module using onetime bottom-up copper filling. This bumpless TSV integration approach simplified the fabrication process and provided better reliability compared with solder based technologies. Silicon wafer with blind vias was first bonded to a carrier wafer face to face with pre-patterned BCB, and then thinned...
A three-layer-stacked wafer with CMOS devices was fabricated for the first time by using hybrid wafer bonding and backside-via-last TSV (7-μm diameter/25-μm length) processes. Successful fabrication of this wafer confirmed that copper/polymer hybrid wafer bonding brings both seamless copper bonding and void-less underfilling in face-to-face (F2F) and back-to-face (B2F) configurations. The backside-via-last...
Hybrid pixel detectors are now widely used in particle physics experiments and at synchrotron light sources. They have also stimulated growing interest in other fields and, in particular, in medical imaging. Through the continuous pursuit of miniaturization in CMOS it has been possible to increase the functionality per pixel while maintaining or even shrinking pixel dimensions. The main constraint...
Thin silicon or glass interposers provide a path to highly integrated microsystems. In this work we present a process for the fabrication and bonding of 100 and 200 μm thick silicon interposers with frontside and backside multilevel metal (MLM) routing layers and copper filled through-silicon vias (TSVs) with the aspect ratio of 4:1. First, we show the results of a study done to evaluate the compatibility...
Three-dimensional (3D) stacked IC technologies have become a central topic over the past few years, and start to become reality with the introduction of 3D devices in commercialization. Among the technical challenges raised by this technology, thin wafer handling remains one of the most challenging. A large number of publications have focused on this process since several years to present the performances...
This paper describes the design and fabrication of liquid metal interconnects (vias) for 2.5D and 3D integration. The liquid metal is gallium indium eutectic (78.6% Ga, 21.4% In) with a melting temperature of approximately 15.7 °C, which is introduced into via openings of a silicon interposer. This liquid metal interconnect technology can be integrated with existing interposer technologies, including...
This paper presents the first demonstration of polycrystalline silicon interposers with fine pitch through package vias (TPV), with less than 5μm RDL lithography at 50μm pitch copper microbump assembly. Silicon interposers with through silicon vias (TSV) and back end of line (BEOL) wiring offer compelling benefits for 2.5D and 3D system integration; however, they are limited by high cost and high...
This work aims at answering to the 3D mega trend of silicon based platform and 3D wafer level packaging (3D-WLSiP). We focus on the development of architectures compliant with high volume markets for applications like mobile telecommunication. In this market, the silicon material will remain the key platform for 3D integration and has to offer the vertical interconnection as well as ultra-thin packages...
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