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Recent work in the development and demonstration of dual- and triple-junction III-V/Si solar cells, with active Si subcells, is presented. This work includes development efforts spanning the full range of associated materials and device components: Si and metamorphic III-V subcells, III-V/Si heteroepitaxial integration, metamorphic III-V buffers, metamorphic III-V tunnel junctions, and full device...
This paper presents an analytic approach to obtain the optimum source and load impedance values for different criteria of maximum power gain, linearity and efficiency. A comparison of two identically rated commercially available 25W RF power transistors in silicon LDMOS and GaN-on-Si HEMT reveals that GaN HEMTs are relatively immune to optimization criteria popularly used by RF amplifier designers,...
CMOS utilizing high mobility Ge/III-V channels on Si substrates is expected to be one of the promising devices for high performance and low power integrated systems in the future technology nodes, because of the enhanced carrier transport properties. In addition, Tunneling-FETs (TFETs) using Ge/III-V materials are regarded as one of the most important steep slope devices for the ultra-low power applications...
Vertical GaN Schottky barrier diodes (SBDs) were fabricated on free-standing GaN substrates with low dislocation density. Vertical GaN-SBDs with a forward current of 5A and a blocking voltage of 600V exhibit the most superior reverse recovery characteristics among GaN, SiC, and Si diodes. We also confirmed stable forward and reverse aging characteristics for 1000 hours at 150 °C.
In this work we show the impact of surface cleaning on the dynamic characteristics of Au-free AlGaN/GaN Gated Edge Termination Schottky Barrier Diodes (GET-SBDs). It is demonstrated that the current dispersion (measured in pulsed regime) can be reduced by introducing a N2 plasma cleaning step in the anode metal deposition chamber. Moreover, diodes treated with N2 plasma show lower current drop after...
This paper reports a normally-off high voltage hybrid Al2O3/GaN gate-recessed MOSFET fabricated on silicon substrate. The normally off operation was implemented by digital gate recess using an oxidation and wet etching based AlGaN barrier remove technique. The Al2O3/GaN MOSFET features a true normally off operation with a threshold voltage of 2 V extracted by the linear extrapolation of the transfer...
Gallium nitride (GaN) based High Electron Mobility Transistors (HEMTs) are candidates for the next generation of power electronic devices and are therefore subject of intense research activities worldwide. Technology CAD (TCAD) has proven a major impact on the optimization of silicon based device technologies. It is a logical follow up to provide accurate simulation tools, methods and models for GaN-based...
A new isolated Drive-by-Microwave (DBM) gate driver with a high-speed voltage monitoring for over current detection is proposed, which is composed of a 2.4GHz GaN/Si DBM transmitter, DBM receiver chip and compact isolated couplers in a low-cost printed circuit board. The fabricated DBM gate driver demonstrates a 200 Mbps isolated data transmission and a GaN power switching device's driving with a...
This paper reports on an industrial DHEMT process for 650V rated GaN-on-Si power devices. The MISHEMT transistors use an in-situ MOCVD grown SiN as surface passivation and gate dielectric. Excellent off-state leakage, on-state conduction and low device capacitance and dynamic Ron is obtained. Initial assessment of the intrinsic reliability data on the in-situ SiN is provided.
In this work, a thermally stable air-bridged matrix (ABM) AlGaN/GaN high electron mobility transistor (HEMT) with micromachined diamondlke carbon (DLC)/Titanium thermal-distributed layers was demonstrated. After removing the Si substrate beneath the HEMT, the DLC/Ti heat dissipation layers were deposited on the backside of the HEMT, and a significant breakdown voltage improvement was observed. The...
In this paper, the reliable SiNx/AlGaN/GaN MISHEMTs on silicon substrate with improved trap-related characteristics have been well demonstrated. The devices with our proposed treatment method showed less deep-level traps and more Si surface donors at SiNx-AlGaN interface. The trap related device characteristics are also improved by using our optimized treatment method. The devices with proposed treatment...
As GaN power devices emerge from research to industry, the characterization of these novel devices itself and its application in power electronic converters is essential. The purpose of this paper is to prove the capabilities of GaN technology using a novel 600 V normally-off GaN-on-Si transistor which shows no dynamic behavior of its on-resistance. A hard switching DC/DC converter prototype reveals...
The monolithic integration of III-V nanowires on silicon by direct epitaxial growth enables new possibilities for the design and fabrication of electronic as well as optoelectronic devices. We demonstrate a new growth technique to directly integrate III-V semiconducting nanowires on silicon using selective area epitaxy within a nanotube template. Thus we achieve small diameter nanowires, controlled...
Performance evaluation of low-voltage silicon and GaN power FETs is presented for chip-scale DC-DC power converter applications. The circuit calculations are based on an improved circuit model for the FET with accurate description of terminal capacitances and on-resistance. It is shown that GaN power FETs combined with silicon MOS power diodes can potentially lead to nearly 82% power conversion efficiency...
CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of key devices for high performance and low power advanced LSIs in the future. In addition, the heterogeneous integration of these materials with Si can provide a variety of More-than-Moore and Beyond CMOS applications, where various III-V/Ge functional devices can be co-integrated. In this presentation, we review...
Spacer-less In0.7Ga0.3As n-MOSFETs with self-aligned Ni-InGaAs contacts formed using a direct reaction between Ni and InGaAs were demonstrated. A novel salicide-like metallization process was developed to achieve self-aligned Ni-InGaAs contacts, comprising the steps of Ni reaction with InxGa1-xAs and selective removal of excess Ni. Dopantless n-MOSFETs with metallic Ni-InGaAs source/drain (S/D) and...
This work investigates the impacts of quantum confinement on the short-channel effect and band-to-band-tunneling (BTBT) of UTB Ge and InGaAs NMOS devices using derived analytical solution of Schrödinger equation verified with TCAD simulation. Our study indicates that, when the channel thickness (Tch) is smaller than a critical value (Tch, crit), the quantum confinement effect may decrease the threshold...
High mobility III-V compound semiconductors are the most attractive candidates who could provide enhanced performance for future logic applications. Even so, people still hesitate to accelerate III-V materials entering into Si CMOS world. To relieve people's concerns, the integration of thin III-V on Si and Si transistor-like technique or architecture should be demonstrated.
We demonstrate selectively-grown GaAs nano/micro structures on silicon substrates by molecular beam epitaxy. Hexagonal or rectangular shaped GaAs crystals, depending on the orientation of the silicon substrate, were formed inside the silicon-dioxide-masked nanoholes at 630°C. Clear facets, which are the low-energy {011} planes, indicate single-crystalline nature of the growth. GaAs/InAs/GaAs structure...
We investigate the properties of ballistic spin field-effect transistors (SpinFETs). First we show that the amplitude of the tunneling magnetoresistance oscillations decreases dramatically with increasing temperature in SpinFETs with the semiconductor channel made of InAs. We also demonstrate that the [100] orientation of the silicon fin is preferred for practical realizations of silicon SpinFETs...
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