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In this paper, single crystalline silicon (SCS) anisotropy is exploited to suppress support loss in side-supported breathing-mode thin-film piezoelectric-on-silicon (TPoS) disc resonators for the first time. Contrary to the case of isotropic materials, for an SCS breathing-mode disc resonator, displacement is not uniform at the outer edges of the resonator. It is shown that for high order harmonics,...
The smallest wirelessly powered neural implant to date is demonstrated. Power is sent over a near-field inductive link. The implant system is realized on a single CMOS ASIC which includes the on-chip coil, the harvesting circuit, and the current driver. The entire system is fabricated in a 0.13 μm CMOS process and occupies merely 180 μm × 180 μm.
In order to achieve a minimum and stable TSV capacitance independent of operating voltage and frequency, a simple but feasible silicon-insulator-silicon (SIS) TSV structure is proposed using ultra-low-resistivity silicon (ULRS) and polymer Benzocyclobutene (BCB). In this paper, an analytical model for capacitance evaluation of the proposed SIS TSV is strictly derived in detail from Poisson's equation...
In this work, we present the high frequency extraction of electrical material properties of silicon substrates. Two methods, including the substrate integrated waveguide (SIW) based method and the planar resonator based method, are used and their consistency will be shown. For the SIW-based method, a line difference algorithm is applied for the calculation of a broadband material property with the...
Modern microelectronic devices frequently require the use of thin films and multi-layer systems [1]. Especially the application of advanced material models to simulate e.g. reliability issues for such components relies on the accurate determination of the layers' elastic properties [2]. Polyimides (PI) show many beneficial mechanical and chemical properties for applications in the field of microelectronics,...
For high frequency applications, the electrical circuit performance is strongly related to the quality and loss characteristics of the passivation layer. In this work, we present the comparison of high frequency performances of different passivation materials for in a frequency range up to 110 GHz. The evaluation of the materials is based on measurement of coplanar transmission lines on the redistribution...
We demonstrate a frequency-domain modulation spectroscopy system in the terahertz (THz) range based on the self-heterodyne technique to enhance the sensitivity of the small spectral change measurement. To evaluate the effectiveness of our system, we measured absorption of the THz wave caused by photo-induced free carriers generated in a high-resistive (4000 Ωcm) Si substrate. The 400-μm-thick Si substrate...
In this paper, a novel cylindrical Dielectric Resonator Antenna (DRA) operating at 60 GHz is introduced. The antenna is fabricated using a high-resistivity silicon wafer. The DR is defined in the wafer using micromachining technology. The feeding network is located at the other side of the wafer. The proposed antenna is simulated using HFSS and the results are verified by measurements. The antenna...
This paper presents an original concept of a 3D-PICS High density Integrated Passive Device Technology with P+ guard rings realized in a 300µm depth High Resistivity Silicon Substrate (HRS) in order to reduce significantly the substrate noise coupling. In this paper, a 3D-PICS IPD test chip was studied as the passive part prototype of a System-In-Package chip in combination with RF transceiver operating...
The aim of this paper is to develop a formalism for porous Si dielectric parameter extraction for use in RF passive device design. We show that the extracted dielectric parameters using this formalism can be reliably used to simulate the experimental behavior of coplanar waveguides and inductors. In this respect we have fabricated RF devices on porous Si, extracted the dielectric parameters of the...
We investigate the use of laterally-coupled High Overtone Bulk Acoustic Resonators (HBAR) based on AlN thin films sputtered on silicon and sapphire substrates in order to target an operation frequency between 2 and 5 GHz. Being tightly coupled, they generate an extremely narrow bandwidth, assimilated to a single resonance whose unloaded quality factors reach respectively 3,300 and 2,000 at 2.5 and...
The three-dimensional integrated circuit has attracted much attention because of evolving functions in today's integrated circuit products and continuing demands for low power consumption and miniature chip size. Through silicon vias (TSVs) provide a vertical interconnection between stacked dies with much shorter and denser connectivity than the hybrid horizontal and bondwire interconnects in conventional...
In this paper, silicon resonators were hermetically packaged on basis of anodic bonding of Si and LTCC (Low Temperature Co-fired ceramic) substrates. This research aims at developing the integration technology of the resonator on LSI (Large Scale Integration) for application of a timing device. The structures of the resonators were transferred onto the LTCC substrate using the anodic bonding of silicon...
Simultaneous switching output buffer (SSO) noise and impedance of power distribution network (PDN) for a 3D systemin package (SiP) with 4k-IO widebus structure has been investigated. The 3D SiP consisted of 3 stacked chips and an organic interposer. These three chips were a memory chip on the top, a silicon interposer in the middle, and a logic chip on the bottom. The size of each chip was the same,...
This paper describes the industry's first heterogeneous Stacked Silicon Interconnect (SSI) FPGA family (3D integration). Each device is housed in a low-temperature co-fired ceramic (LTCC) package for optimal signal integrity. Inside the package, a heterogeneous IC stack delivers up to 2.78Tb/s transceiver bandwidth. The resulting bandwidth is approximately three times that achievable in a monolithic...
In this paper, we proposed a fabrication method of a double-layer split-ring-resonator (SRR) array for metamaterials in the terahertz (THz) frequency range. Our fabrication method leads to three-dimensional metamaterials.
This paper presents for the first time a hybrid silicon-organic packaged mm-wave antenna, that is flip-chip bonded to a 400 µm thick silicon substrate through gold bumps and a non-conductive film (NCF) adhesive layer. The antenna was made on RO3003™. Two different antennas were designed, at 60 and 80 GHz respectively. It is demonstrated that the silicon substrate can be successfully integrated into...
The advantages of single-ended transmission lines are their simplicity and high flexibility of interconnection. Generally, shielding with additional ground lines is essential to improving the immunity of single-ended RF/high-speed signals against noise. However, this approach is very difficult to realize for a single-ended through silicon via (TSV) in 3D ICs because of the strong dependence of characteristic...
TSVs in 3D integrated circuits are a source of noise that can affect nearby transistor performance. So an analytical physics-based model of the TSV-to-substrate coupling is proposed to perform time domain or noise simulations. Silicon measurements at low frequencies and radiofrequencies are reported. Simulations are done using a software performing device and electromagnetic co-simulations. The model...
A low insertion-loss ultra-wideband (UWB) bandpass filter (BP-filter) with two finite transmission zeros (fz1 and fz2) at high-frequency stop-band by 0.18 μm CMOS technology was demonstrated. Fz1 (the lower frequency one) and fz2 can be tuned individually by the shunt branch (L2, Rs2, C3 and C4+Cp2) and the series inductor (L1, Rs1 and Cp1), respectively. The micro-stripline (MSL) interconnection...
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