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Simple and accurate models for Gate leakage current (Ig) in nanoscale Metal Oxide Semiconductor Field Effect Transistor (MOSFET) are proposed in this paper. The accurate modeling for Oxide Electric field (Eox) and Oxide voltage (Vox) due to Short Channel Effect (SCE) between the gate and inverted channel is the key for higher accuracy. The Oxide Potential drop due to the charges image at the interface...
This paper generalizes a result in the classical textbook by Stratton regarding the change in electrostatic potential energy due to the introduction of a conductor S0 into a fixed system of n conductors of arbitrary shape. The change in electrostatic potential energy is rewritten as a surface integral over S0 which connects the unperturbed problem (the electrostatic setting before S0 is introduced)...
In this paper, a new surface potential based compact model for long channel fully depleted SOI MOSFET with lightly doped ultra-thin body is presented. The 1-D Poisson equation is solved using the appropriate boundary conditions, and a closed-form surface potential solution is proposed for the front and back surface potentials. Finally the model was compared to numerical simulations and a good agreement...
A new implementation of the Lorentz force is presented in TCAD field solving. The method is applicable to metallic and semiconducting materials. Apart from external magnetic fields, the self-induced magnetic fields are also taken into account. The soundness of the implementation is demonstrated by comparing the numerical results with the outcomes of analytic solutions for a simple wire structure.
In this work, a physics-based compact subthreshold swing (S) model including bulk traps effects is presented for undoped (or lightly doped) symmetric double-gate (DG) MOSFETs based on an analytical analysis of the two-dimensional (2D) Poisson equation in which the traps effects have been considered. Using this compact model, we have studied the effects of the defects on the scalability limits of DG...
This paper describes seamless transitions among various MOS devices, ranging from bulk and partially/fully-depleted SOI to double-gate FinFETs and silicon-nanowire MOSFETs. The underlying governing equations for various structures are outlined, which provide the motivation for unifying MOS compact models with the unified regional modeling (URM) approach.
We have analyzed the different structures of the DG MOSFETs and their potentials in suppressing short channel effects (SCEs). In particular, we have developed compact physics-based model of the subthreshold swing. Asymmetric DG MOSFET shows superior performance in the nanometer region. The new scale length for DG MOSFETs has been derived from the subthreshold swing model (S model). The new scale length...
A global continuous channel potential solution is proposed for the modeling of symmetric double-gate (DG) MOSFETs. To obtain the channel potential, from accumulation to inversion regions, 1-D Poissonpsilas equation in the silicon film of the DG MOSFETs is solved physically. The extensive comparisons between the calculated results and numerical simulations illustrate that the analytical solution is...
This paper presents extracted closed-form expressions for the potential function in cylindrical nanowires in presence of extrinsic charge distribution term, arising from doping. These expressions are derived from the solution to Poisson-Boltzmann ordinary differential equation. This ODE has been solved in terms of intrinsic carrier concentration, temperature and the distance from the central axis...
While the CMOS analog circuits can be designed with the minimum-gate-length of the fabrication process in the alpha-power law MOSFET model, the length of a MOSFET gate has been chosen to be a larger scale than the minimum-gate-length in the conventional Shockleypsilas square model. In this paper, we describe a 6-b 100 MSPS CMOS current steering digital-to-analog converter (DAC) with the alpha-power...
Recent silicon process technology advancements have given chip designers integration capabilities never were possible before, and have led to a new wave of complex ASICs (applied specific integrated circuits). These advanced processes come with new challenges. This paper presents some of the challenges in deep submicron technologies, which require new design practices. We demonstrate some issues related...
A planar edge termination technique of trenched field limiting ring is investigated by using 2-dimensional numerical analysis and simulation. The better voltage blocking capability and reliability can be obtained by trenching the field-limiting ring site which would be implanted. The trench etch step makes the junction depth deeper so that junction curvature effect and surface breakdown are less happened...
This paper presents an analytical modeling of ballistic and quasi-ballistic transport, implemented in Verilog-A environment and used for circuit simulation. Our model is based on the Lundstrompsilas approach and uses an expression of the backscattering coefficient given by the flux method. The model takes also into account short channel effects and tales into account the effects of different scattering...
This paper presents a new model for ultra short symmetric double gate MOSFET with gate lengths in the 10 nm to 50 nm range. A non-charge sheet based analytical model of undoped symmetric double-gate MOSFETs is developed in this model using the Surface Potential Plus (SPP) approach. The model is based on Cheming Hu model in solving the Poisson equation in the term of the electron concentration rather...
A non-charge-sheet surface-potential-based compact drain-current model for long-channel undoped gate-all-around (GAA) silicon-nanowire (SiNW) MOSFETs is developed. The surface-potential equation is derived from cylindrical Poisson equation for undoped silicon and solved iteratively with a very good initial guess to reach equation residue below 10-16 V within a few iterations. The single-piece current...
The polycrystalline samples of BaSi2, SrSi2, and LaSi were prepared by spark plasma sintering (SPS). The electrical resistivity (rho) and Seebeck coefficient (S) were measured above room temperature. The S of BaSi2 was negative and the absolute values were rather high (-669 muVK-1 at 337 K). The S of SrSi2 was positive and the absolute values were lower (118 muVK-1 at 332 K) than those of BaSi2. For...
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