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The crossbar resistive random access memory (RRAM) has been studied extensively due to its low-power, low-cost, high density and nonvolatile characteristics. However, the dependence of RRAM performance parameters on temperature, from cell to array level, is less explored. Particularly, thin-film based RRAM that is integrated into 3D ICs is subject to severe thermal conditions. Hence, temperature dependence...
Studies the effect of hydrostatic pressure on the indium antimonide thin films n- and p-type conductivity were carried out in the temperature range (−180 ÷ +100) °C. Temperature dependences of the resistance and hydrostatic pressure coefficient for sensitive elements based on InSb thin films doped with zinc and tellurium were studied. Obtained the high values of hydrostatic pressure coefficient and...
This paper presents a novel temperature compensation technology to overcome the problem of temperature drift for micromachined thermal gas gyroscopes. The compensation methodology utilizes an alternating constant-temperature-difference (CTD) operation circuit to thermally drive gas motion for stabilizing the sensor scale-factor and reducing the bias temperature sensitivity of the gyroscope. Compared...
The non-ideal characteristics of bipolar junction transistors (BJT) on the performance of band gap reference circuits is investigated. It is shown that the base spreading resistance (BSR) of a substrate BJT along with its temperature dependence has a significant negative impact on the performance of voltage references. It is shown that the temperaturedependent forward current gain (β) also adversely...
This paper describes an embedded system for the simultaneous dynamic control and thermal characterization of the heating phase of an Ultra Low Power (ULP) micromachined sensor, featuring thermal characteristics quite similar to those of innovative ULP semiconducting metal oxide (MOX) sensors. A Pulse Width Modulated (PWM) powering system has been realized using a microcontroller featuring an ARM7...
For MOSFETs with a current-sensing function (current-sensing power MOSFETs), temperature-based changes in the current sense ratio have been a significant problem. This research clarified the mechanisms involved in these temperature-based sense ratio changes and identified the effects of the following on sense ratio temperature dependence: (1) Drift layer impurity concentration and layer thickness,...
Thermal performances of Si-Ge whiskers were measured in temperature range of 4, 2-550K. On their basis sensors for simultaneous measuring of absolute temperature and temperature difference in the range of 20-120K as well as 350-500K have been designed. High value of figure of merit indicates in good stability of sensor operation. Inertia of the sensor does not exceed 60 msec. To improve output performances...
ldquoDevelopment for advanced thermoelectric conversion systemsrdquo supported by the new energy and industrial technology development organization (NEDO) has been successfully completed as one of the Japanese national energy conservation projects. Three types of the cascaded thermoelectric modules operating up to 850 K in high electrode temperature and two types of Bi-Te thermoelectric modules operating...
We report thermoelectric characterization of Bi2-xSbxTe3 (x = 0.5, 1.0, and 1.5) synthesized by a solvothermal method using DMF as solvent. For Bi2Te3, the size of the edge and thickness of the hexagonal nanoplatelets are 200-250 nm and 20-25 nm, respectively. Bi2Te3 nanosheets appear to grow epitaxially from the surface of the Te tubes, which forms in the first step and acts as the template for the...
In this study, we fabricated in-plane thermoelectric micro-generators (4 mm times 4 mm) based on bismuth telluride thin films by using flash evaporation method. The thermoelectric properties of as-grown thin films are lower than those of bulk materials. Therefore the as-grown thin films were annealed in hydrogen at atmospheric pressure for 1 hour in a temperature range of 200 degC. to 400degC. By...
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