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An investigation of threshold voltage instability in gate recessed normally-off GaN metal insulator semiconductor high electron mobility transistors (MIS-HEMTs) was performed by analyzing the interface states, border traps, and conduction band offset. To reduce the threshold voltage instability with improved dielectric-GaN interface, plasma enhanced atomic layer deposition (PEALD) technique was successfully...
The tunneling assisted charge exchange on the inner interface of high dielectric constant (high-k) dielectric stacks has been studied. The charging and discharging of traps existing at the HfO2/SiNx interlayer increase the transient capacitance amplitude, and so deep level transient spectroscopy (DLTS) measurements provide overestimated interfacial state density (Dit) values. This effect is quite...
In this paper, we have investigated bulk trap and interface trap density (Dit) caused by millisecond annealing (MSA) using gate current fluctuation (GCF) and charge pumping measurements. We show that the high energy flash lamp annealing (FLA) creates the GCF with a long duration time and it is critical issue to get a stable SRAM operation. FLA creates interface traps localized at the gate edge of...
The SiO2/SiC interface limits optimum SiC MOSFET performance due to a high density of interface states (D????), which is reduced in devices that receive post-oxidation NO-annealing. Also, the interface state density in the 6H polytype is generally lower, approaching that of the NO treated 4H. In this work, interface states are investigated in both as-oxidized (AO) and NO-annealed (NO) MOS capacitors...
The interface trap density of fresh TiN/TaN gated HfO2/SiO2/Si/epi-Ge pMOSFETs is measured using the DCIV technique. Its temperature dependence is also discussed here. We observe a polarity dependent DCIV peak shift. The bias temperature stress induced interface trapped charge and oxide trapped charge shifts are also systematically investigated in this work.
Recent work has shown that the negative bias temperature instability (NBTI) can be significantly suppressed through the incorporation of fluorine in the gate oxide of pure SiO2 pMOSFETs. In this study, we use spin dependent recombination and standard gated diode current measurements to investigate the atomic-scale processes involved in fluorine's suppression of NBTI. We find that fluorine can effectively...
Reported here are subthreshold measurements on n-channel 6H-SiC MOSFETs over a range of temperatures. A simple theoretical model is presented to explain their general form. It is shown that the temperature dependence of the subthreshold current indicates a high density of electronic states at or near the SiC-SiO2 interface. These states are negatively charged when occupied (acceptor-like), and emit...
Electron traps in HfO2 have been investigated by measuring thermally stimulated current (TSC). Two different interface regions have been identified where captured electrons interact with energy band states. The two domains are separated by and close to the ldquointerlayerrdquo of SiOx commonly present in high-k/silicon stacks. On the inner side, between SiOx and silicon, we find an irregular silicon...
Photovoltaic and photoconductive properties of ultra-thin a-Si/SiO2 multilayers grown by PECVD and annealed at 1150degC were studied. A quantum yield greater than one is observed due to secondary carrier generation from interface trap states.
In this work MOS capacitors with anodic oxides (9 nm) were elaborated.The anodic silica films (SiO2) were produced by anodization of monocristalline silicon wafers in pure water in an electrolysis cell (P.T.F.E) at ambient temperature, with a constant current density of 20 muA/cm2. Film thickness increases linearly as a function of total charge during oxidation. The oxides are characterized by current-voltage...
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