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The electrical and photosensing properties correlated with structure and morphology of TiO2/(GeSi/TiO2)2 multilayers are investigated. The multilayers are prepared by magnetron sputtering followed by rapid thermal annealing. Studies of Raman spectroscopy, transmission electron microscopy and X-ray diffraction are carried out. Measurements of dark current versus voltage and temperature are done. The...
In this paper an ultrasonic reflectometry approach to measure the thermal conductivity and temperature of a material by contact is presented. This device can be utilized for monitoring material properties during manufacturing, and robotic handling of objects. The sensor comprises an AlN piezoelectric ultrasonic transducer operating at GHz frequencies, situated on one side of a silicon chip. The transducer...
Thermal simulations are a powerful tool for the development and design of new electronics to predict their thermal behaviour during operation. To obtain accurate thermal simulations the knowledge of thermal properties of all the materials integrated in electronic devices is essential. Most materials show a decrease of thermal conductivity and thermal diffusivity with increasing temperatures, which...
BaTi5O11 thin films with single-layer thicknesses about 400 nm were deposited on the Si substrates by sol-gel method. The influence of surface morphology, optical and dielectric properties was mainly investigated. The diffraction pattern showed that the annealed films exhibited a polycrystalline microstructure, and the increase in grain size of BaTi5O11 thin films occurred with an increase in annealing...
We report for ultra-thin Si tunnelling diodes that negative differential conductance (NDC) is dominated by the excess current at room temperature. This is attributed to the gap-states induced by the co-dopants in the pn junction. First-principles simulation shows that the presence of co-dopants in the pn junction region leads to an increase in the interband tunnelling current by two orders of magnitude...
The paper describes, the structural and temperature analysis of 4H-SiC DMOSFET (Double-implanted metal-oxide-semiconductor field-effect-transistor). The SiC based DMOSFETs are most preferred switching devices for high power conversion because of its high carrier mobility and low dopant ionization energy. The current flow is in vertical direction i.e from source in the top to the drain in the bottom,...
The potential of silicon nanoparticle (Si NP)-polyaniline (PANI) composite as next-generation thermoelectric (TE) material has been investigated in this study. Si NPs, prepared by oxidation-etching-oxidation of milled Si powder was mechanically mixed with PANI, synthesized by oxidative polymerization of aniline. The Seebeck coefficient of dedoped PANI and its composite with Si NPs was remarkably high,...
The temperature dependence of saturation magnetisation of commercial 0.1 to 3 wt. % silicon steels is first measured using an air-cored solenoid and then modelled using a linear formula in accordance with the spin-wave theory, over the range of 20–100°C and in 100 KA/m applied field. The samples measured were heated by applying a heavy ac current along their length, and the measurement of temperature...
This paper presents a study on the structural rigidity of an Inertial Measurement Unit (IMU) implemented using the Folded MEMS approach. For such folded structures, environmental survivability and stability is a natural concern. We investigated IMUs of 35 mm3 (small) and 130 mm3 (medium) in volume, in the shape of a cube and a pyramid, and considered the reinforcement methods, including epoxy, eutectic...
Recent interests in exploring the potential of renewable energy possibilities and readiness in sultanate of Oman has showed that it can engage renewable energy technologies, such as solar, wind power and various hybrid power models to mitigate fossil fuel limitations, revitalize additional economic development, create new jobs and preserve a cleaner environment. However, limited knowledge and information...
Physical parameters of a photovoltaic cell can be determined from its experimental current-voltage characteristic. The accurate determination of these parameters is particularly dependent on experimental measurements conditions. The reliability of measurements of temperature variations and intensity of solar radiation are dependent on the sampling time of the measurements. Controlling the radiation...
In this paper, we evaluate the quality (Q) factor and the resonance frequency of a double paddle oscillator (DPO) with different thickness using analytical, computational and experimental methods. The study is carried out for the 2nd anti-symmetric resonance mode that provides extremely high experimental Q factors on the order of 105. The results show that both the Q factor and the resonance frequency...
Silver sintering is a potential die attach technology to replace the solder technology for power electronic systems. A design of experiments (DoE) is performed in order to investigate the influences of sinter parameters as sinter pressure, temperature, duration, drying temperature and the interactions of these parameters on the shear strength of the Ag-sinter connection. Four sinter pastes have been...
We have studied the effect of Ge-concentration in gas phase on electronic properties of GeXSiY:H alloys deposited by RF-PECVD. The relative gas phase Ge concentration was varied from [Ge]gas= 50 % to 100 %. The electronic properties of the films were studied by the measurements of temperature dependence of dark conductivity σdark (T) in the range of T= 300 to 430 K. The temperature dependence curves...
A novel high voltage edge termination utilizing Surface-Charge-Control (SCC) technology has been proposed for a wide range temperature with humidity. Under electrically biased and high-humidity conditions, charges generated by the high electric field and external perturbations accumulate on the silicon surface, which eventually degrades the blocking capability. The proposed edge termination structure...
The small signal levels provided by the limited size and inertial mass of miniature, open-loop MEMS accelerometers provide a challenging problem to achieve low noise and high stability needed for navigation and other applications. The challenge is made more difficult when different applications need to operate at a wide range of different peak g-levels. This paper discusses the performance achieved...
A simple and low cost method to produce well aligned silicon nanowires at large areas using metal assisted chemical etching at various temperature were presented. The high aspect ratio structure of silicon nanowires growth by anisotropic wet etching method was observed. Prior to the etching, the formation of silicon nanowires was by metal assisted chemical etching (MACE) in solution containing hydrofluoric...
This paper presents a non-contact measurement of irradiance on plane of array (POA) and cell temperature for PV systems. The idea is motivated from the diode model of PV, where POA irradiance and cell temperature are proportional to the photocurrent and modified ideality factor, respectively. Based on the recent progress of diode model identification, the photocurrent and modified ideality factor...
In this article an investigation is presented, where factors influencing temperature and humidity ariables in a temperature controlled chamber are analyzed. The objective of this study is to determine whether the humidity can be controlled independently of temperature in order to implement a change in the system to stabilize the relative humidity. After showing the theoretical background, the changes...
Opto-electrical characteristics of Si-based blocked-impurity-band (BIB) detector are investigated by combing experiment with simulation. The measured black-body response characteristics at different temperature are discussed. The simulated dark current characteristics with different thicknesses of blocking layer are also presented by taking into account impurity-band effects.
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