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This paper presents the results of modeling and simulation of the the DC characteristics of an Al0.25Ga0·75N/GaN Metal Oxyde Semiconductor High Electron Mobility Transistors (MOSHEMT's). This study is achieved by using a drift diffusion transport model of a commercial device simulator silvaco. Two dimensional numerical simulation is used to describe significant physics in the characteristics for Al...
The paper reports high performance enhancement-mode MOS-HEMT based on quaternary InAlGaN barrier. A self-aligned gate technology is used for gate recessing, dielectric deposition and gate electrode formation processes, where improved digital recessing process as well as O2 plasma-assisted Al2O3 gate dielectric is developed. Fabricated E-mode MOS-HEMT delivers a record output current density of 1.7A/mm...
In the past two decades, the GaN-based high-electron-mobility-transistor (HEMT) has attracted tremendous attentions due to its wide bandgap, high electron mobility and high electron saturation velocity, which makes it a good candidate in the area of high frequency and high power applications [1]-[5]. However, there are still some issues such as high density of surface states and high gate leakage...
This paper reviews the most relevant threshold-voltage instabilities and dielectric breakdown mechanisms in GaN-based transistors with metal-insulator-semiconductor gate. Metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) with partially-recessed gate have been submitted to pulsed and constant voltage stress, with the aim of evaluating the impact of charge trapping processes...
In this paper, Al2O3 AlGaN/GaN MOS-HEMTs and HEMTs grown on Silicon substrate were successfully simulated. DC and RF characteristics were extracted. The AlGaN/GaN HEMT suffers from high leakage current. In order to solve this problem, a dielectric Al2O3 gate was applied to the device to suppress the high gate leakage current. The innovative MOS-HEMT technique reduces the leakage current.
This paper reports on the technology and design aspects of an industrial DHEMT process for 650V rated GaN-on-Si power devices, using an in-situ MOCVD grown SiN as surface passivation and gate dielectric, with low interface state density and excellent TDDB. Optimization of the GaN epi stack results in very low off-state leakage (<10nA/mm). Due to the reduction of buffer trapping, low dynamic Ron...
Recently, GaN-based high-electron-mobility-transistor (HEMT) has demonstrated its promise in high frequency [1], high power [2] and low noise [3] electronic devices. The lattice matched InAlN/GaN HEMT structure provides a higher 2D electron density than AlGaN/GaN due to a larger bandgap offset and minimized short-channel-effects due to its thinner barrier. However, because of its several-nm thin barrier,...
Thermal stability of AlGaN/GaN MOS-HEMTs and -diodes using Gd2O3 are investigated by means of different thermal cycles and storage tests up to 500°C for one week. IV DC and pulsed characteristics of the devices before and after the processes are evaluated and compared with conventional HEMTs. Results show that the devices with Gd2O3 dielectric layer have lower leakage current and a more stable behavior...
This paper presents for the first time Arc shaped gate and arc shaped stacked gate dielectric with cap layer Nanoscale AlGaN/ GaN High Electron Mobility Transistor for realization of normally-off HEMT with reduced gate leakage current. An excellent high drain current of 1.182×10−3 A/um at 0.881 threshold voltage along with satisfactory ION/IOFF current ratio of 8.62×107 is obtained.
Sub-30 nm III-V planar Quantum-Well (QW) n-type MOSFETs are fabricated through a self-aligned CMOS compatible front-end process. Good performance and short-channel effect mitigation are obtained through the use of a QW-channel that incorporates a thin pure InAs subchannel and extremely scaled HfO2 gate dielectric on a very thin InP barrier (total barrier EOT<1 nm). The devices also feature self-aligned...
Pseudomorphic high electron-mobility transistors (pHEMTs) have demonstrated excellent high-speed, power and noise performance, and have been widely used in microwave and millimeter-wave circuits, as well as wireless and optoelectronic applications. Replacing the Schottky gate contacts in pHEMTs with insulating metal-oxide-semiconductor structures (pMOSFETs) can result in increased allowable gate voltage...
Small-bandgap InAs channel materials are potential candidates for high-speed and low-power applications and have been demonstrated in AlSb/InAs/AlSb QWFETs. Taking advantage of their excellent transport properties, we successfully develop an InAs-channel metal-oxide-semiconductor modulation-doped field-effect transistor (MOS-MODFET) using 100-nm PECVD-deposited SiO2 dielectrics for gate dielectrics...
High quality thin barrier InAlN/AlN/GaN heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). The metal-insulator-semiconductor (MIS) structure devices were fabricated with high dielectric constant material barium strontium titanate (BST). The gate leakage current is reduced more than one order of magnitude under 40 V reverse bias, by using the high dielectric constant material...
A compact model of III-V HFETs is developed for digital logic circuit applications such as a 6T-SRAM cell. We study sub-22 nm technology III-V SRAM circuit design via III-V MOSFETs with thin high-k dielectric for low gate tunneling current, and optimized extrinsic structure for minimum parasitic capacitance. We investigate the drawbacks of a weak PMOS device in a SRAM cell and propose a minimum requirement...
Compared with the conventional high electron mobility transistor (HEMT), the metal-insulator-semiconductor (MIS)-HEMT has several advantages such as lower gate leakage current, higher maximum saturation drain current and the better restrain of current collapse. This paper studied the effects of temperature and the thickness of dielectric on the characteristics of Al2O3 MIS-HEMT. The device characteristics...
The performance of AlGaN/GaN high electron mobility transistors (HEMTs) with an AlxSi??Nz passivation is reported for the first time. Thin films (30 nm) of AlxSi??Nz and Si??Nz were used to passivate devices (fabricated side-by-side) and their performance was compared in both small signal and large signal measurement environments. Examination of MIS structures with each dielectric by capacitance-voltage...
We have developed a novel AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) using stack gate IHD2/Al2O3 structure grown by atomic layer deposition (ALD). The stack gate consists of a thin HfO2 (30Aring) gate dielectric and a thin Al2O3 (20Aring) interfacial passivation layer (IPL). For the 50Aring stack gate, no measurable C-V hysteresis and smaller threshold voltage...
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