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Bilayer graphene has many unique optoelectronic properties [1], including a tuneable band gap, that make it possible to develop new and more efficient optical and nanoelectronic devices. We have developed a Monte Carlo simulation for a single photon counting photodetector incorporating bilayer graphene. Our results show that, conceptually it would be feasible to manufacture a single photon counting...
Impact ionisation MOSFET (IMOS) is a new and promising alternative for conventional MOSFET owing to its low subthreshold slope. With the aid of TCAD simulation tools and the resultant figures, the basic physics behind IMOS operation has been studied in this paper. The Id-Vg curve resulting from this study having a subthreshold slope of 1.272mV/dec is also presented in the paper.
We present a physical analysis of the kink effect in InAs/AlSb High Electron Mobility Transistors (HEMTs) performed by means of a semiclassical 2D ensemble Monte Carlo simulator. InAs-channel HEMTs are very susceptible to suffer from impact ionization phenomena due to the small bandgap of InAs. These processes, jointly with the associated hole transport, are at the origin of the kink effect. When...
In this paper we outline the potential benefits of modulating the applied electric field on the performance of avalanche photodiodes (APDs). Our approach enables the calculation of the impulse response, gain and and excess noise factor, breakdown probability, as well as pulse duration time all under conditions of a dynamic field in the multiplication region.
High field electron and hole transport in wurtzite phase GaN is studied using an ensemble Monte Carlo method. The model includes the details of the full band structure derived from nonlocal empirical pseu-dopotential calculations. The nonpolar carrier-phonon interaction is treated within the framework of the rigid pseudoion approximation using ab initio techniques to determine the phonon dispersion...
2D hydrodynamic computer simulation of non stationary regimes of the glow discharge was developed. The collision ionization, electron-ions recombination and secondary electron emission were taken into account in the model. Model allows carrying out calculations of non-stationary regimes of the glow discharge.
Impact-ionization at low and high electric field as well as the temperature dependence has to be modeled well in order to improve the predictive capability of TCAD tools. The high field behavior is of particular interest for ESD protection devices with low breakdown voltages which are used to protect ICs made with modern technologies. In this paper, the model for estimating the impact-ionization proposed...
We report electrically-induced, explosive atomization of metals and analytes at nanoscale. The phenomenon involves formation of highly-localized nanoscale leakage channels in the oxide layer of a metal-oxide-semiconductor (MOS) structure under pulsed drive, ballistic transport of injected electrons in the nanoscale void channels, impact ionization of metal atoms, and explosive atomization of metal...
Cosmic-ray neutrons can trigger a single-event burnout (SEB), which is a catastrophic failure mode in power semiconductor devices. It was found experimentally that the incident neutron induced SEB failure rate increases as a function of the applied collector voltage in an insulated gate bipolar transistor (IGBT). Moreover, the failure rate increased sharply with an increase in the applied collector...
We calculate the unstrained and the strained band structures of InAs and InSb by means of the empirical pseudopotential method. The impact ionization threshold energy, Eth, is calculated while keeping the energy and momentum conservation. Then the electron transport in the unstrained and the strained InAs and InSb is investigated by using the Monte Carlo (MC) method. In both InAs and InSb, the average...
In this work we present a Monte Carlo study of the influence of the presence of a native oxide which isolates the gate in InAs/AlSb high electron mobility transistors (HEMTs) on their dc and ac performance. A good agreement between simulations and experimental results of I-V curves and small signal equivalent circuit parameters has been found for low VDS, where impact ionization is not of importance...
This paper presents a large signal model of impact ionization effects of FETs and its CAD implementation. The model is compact, describes the effects observed in the gate and drains current in a simple way, converges well in harmonic balance simulation. The model is verified for various FET devices and materials like GaAs SiC, GaN, and InSb. By using this model, the prediction accuracy for Pout and...
The performance of short channel silicon between insulators (SBI) MOSFETs and the proposal of heavily doped silicon between insulators (HDSBI) MOSFETs, in which silicon region between local buried oxide (BOX) regions is heavily doped are presented. The electrical and thermal advantages in short-channel regions over conventional SBI MOSFET are verified by device simulation. Also, electrical properties...
In this paper, the effects of fin width on transient coupling for nMOS and pMOS FinFET transistors was evaluated as a function of applied back gate bias during the write pulse, and the gate length dependence of impact-ionization effects was also evaluated for potential ZRAM operation on SOI substrate. It was observed that the scaling trends with decreasing fin width were unfavorable for the backgate...
We investigate design, fabrication and numerical modeling details of a silicon impact ionization device that was implemented in a standard single-well CMOS process line for use in biomedical applications. Device performance modeling of the perimeter-gated silicon avalanche diode is presented. To lower dark current, tune the current multiplication rate, and change the breakdown voltage, two techniques...
The time evolution of current in p-Ge doped with shallow acceptors was studied. The dependences of impact ionization and recombination times on electric field and uniaxial pressure were found. The role of Poole-Frenkel ionization of shallow acceptors was analyzed.
Recently phase transitions in THz quantum wells inter-subband photodetectors (QWIP) were observed. Very large current discontinuities - up to five orders of magnitude - were obtained, at low temperature. Quantum well impact ionization shifts the structure from a resistive ldquodownrdquo state, where the current flows through inter-well quantum tunneling to a highly conductive ldquouprdquo state. In...
A vertical IMOS transistor with a thin layer of strained SiGe in the impact ionization region near the drain is investigated by full-band Monte Carlo and hydrodynamic simulations for the first time. An anisotropic impact ionization model for strained SiGe based on the constant matrix approximation is applied in the Monte Carlo simulations. The results show that the reduced bandgap of the strained...
A SPICE model that predicts the self sustained operation (SSO) used in programming of a floating body cell (FBC) is presented. This model, which is calibrated to the contributions of the MOS, BJT and impact ionization (II) currents, is demonstrated to accurately predict the static and switching characteristics of the cell. Accurate modeling of device capacitances and leakages allow for quantitative...
This paper presents a TCAD study on the scalability of impact-ionization based floating-body memory cells to fully-depleted short-channel devices. Only the energy-balance transport model allows for transient simulations of realistic voltage wave forms. To attain qualified predictions, impact ionization rates were calibrated by full-band Monte Carlo simulations. Inclusion of band-to-band tunneling...
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