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We have investigated the Schottky barrier diode (SBD) and device (DC and pulsed I–V) characteristics of AlGaN/GaN HEMTs fabricated with sputtered TiN Schottky gate. The measured Schottky barrier height (SBH) of TiN on Al0.26Ga0.74N/GaN HEMT structure are 1.126 and 1.105 eV by I–V and I-V-T measurements, respectively. No hysteresis is observed in between forward and reverse C-V sweeps of TiN SBD. Compared...
Due to the high Schottky barrier height, traditional AlGaN/GaN SBD always has large turn-on voltage. In this paper, a low turn-on voltage cascode AlGaN/GaN SBD Si realized. A commercial 60 V Si SBD and a high voltage AlGaN/GaN HEMT (>700 V) were used in the design. After co-packaged, the device shows a turn-on voltage with 0.26 V and the breakdown voltage can reach up to 800 V. The reversed recovery...
This paper presents simulation of GaN high electron mobility transistor (HEMT) based device structures for the detection of toxic and hazardous gases like carbon monoxide (CO) and hydrogen (H2), respectively. AlGaN/GaN heterostructures show large potential as sensors due to the presence of 2-dimensional electron gas (2-DEG) at the heterointerface. Due to widebandgap material properties, GaN based...
This paper presents a reliability evaluation of Schottky contact of AlGaN/GaN HEMT. The Schottky barrier height(SBH) and ideality factor are investigated through the current-voltage (I-V) characteristics. Two kinds of ac voltages with different frequencies (10 kHz and 1 MHz) are applied on the two similar Schottky contacts of AlGaN/GaN HEMT, and the I-V curves are measured. From the measured results,...
GaN “Smart Discrete” power devices were realized using the AlGaN/GaN-on-Si platform, where two built-in intelligent self-protection functions were demonstrated. First, an AlGaN/GaN normally-off high electron mobility transistor (HEMT) with reverse drain blocking capability was realized, featuring a Schottky contact controlled drain barrier. Compared to the Schottky drain structures, the new design...
Between 5 and 10% of the world's electricity is wasted as dissipated heat in the power electronic circuits needed, for example, in computer power supplies, motor drives or the power inverters of photovoltaic systems. This paper describes how the unique properties of GaN enables a new generation of power transistors has the potential to reduce by at least an order of magnitude the cost, volume and...
New construction of the AlGaN/GaN/semi-insulating Schottky diode was proposed for operation at gigahertz regime. Based on the performed numerical simulations the planar diode with inter-digitated lay out was elaborated. The test structures of the diode was fabricated in AlGaN/GaN heterostructures grown on a c-plane sapphire by MOVPE technique. The d.c. and high frequency characteristics of the device...
In this paper, the linear relationship of forward Schottky junction voltage of AlGaN/GaN HEMT with temperature was investigated. It was used as temperature sensitive parameter to determine the channel temperature at its normal working state by fast switch circuit technique. The regress of tested data was used to reduce the scatter error too. The thermal resistance constitution was extracted from the...
Self-protected GaN power devices were realized using AlGaN/GaN-on-Si platform, where two built-in intelligent functions were demonstrated for “Smart Discrete” applications. First, an AlGaN/GaN normally-off high electron mobility transistor (HEMT) with reverse drain blocking capability was realized, featuring a Schottky contact controlled drain barrier. Compared to the Schottky drain structures, the...
A lateral field-effect rectifier (L-FER) that can be fabricated with normally-off transistor on the same AlGaN/GaN HEMT with the same fabrication process has been demonstrated. The L-FER exhibits low turn-on voltage, low specific on-resistance and high reverse breakdown. A prototype of switch-mode dc-dc boost converter that features monolithically integrated L-FER and normally-off HEMT is demonstrated...
AlGaN/GaN high-electron-mobility transistors (HEMTs) which have the Schottky contact only formed on the unetched region and the SiO2 passivation using an inductively coupled chemical vapor deposition (ICP-CVD) was proposed. The proposed device does not have any Schottky contact on the dry-etched region because the Schottky contact formation is performed prior to the mesa isolation, which suppresses...
In conclusion, an AlGaN/GaN HEMT-compatible lateral field-effect rectifier is demonstrated by utilizing the threshold-voltage controlling capability of the fluorine plasma treatment technique. The rectifier features low on-resistance, low turn-on voltage, high temperature operation and high reverse breakdown voltage. The rectifier is expected to exhibit fast reverse recovery time because of its unipolar...
Hot hole trapping was mechanism was reported for GaN HEMTs from observations of electroluminescence changes and threshold voltage shifts. Passivation effect was studied through EL on the surface traps or surface states and proved to be effective in real-time monitoring of HEMT operation.Hole trapping leading to an increase in the drain to source current, and a decrease in the threshold voltage have...
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