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A high breakdown voltage AlGaN/GaN HEMTs is fabricated by using source-connected field plate (SCFP) in Dynax. The output capacitance (Cds) of this device shows a strong dependence on Vds. A modified Angelov large signal model considering Cds nonlinearity is presented to achieve a more accurate simulation on efficiency and linearity. The small signal simulation results indicate that the proposed nonlinear...
GaN/AlGaN/GaN based normally-off high electron mobility transistors (HEMTs) are promising candidates for future high-power as well as high-frequency applications. Here, a physics-based analytical model is presented to explain the effect of a thick GaN cap layer on the two-dimensional electron gas (2DEG) density at the AlGaN/GaN interface, and the surface barrier height in a AlGaN/GaN heterostructure...
A novel enhance-mode (normally-off) AlGaN/GaN HEMT structure is proposed and demonstrated. Concretely, a few nanometers of tunnel dielectric as well as several split floating gates (FGs) are inserted beyond the conventional MIS structure of the normally-on counterpart. The FGs are applied to storage negative charges by means of tunneling effect, thereby converting the HEMT to an enhancement mode....
Large signal modeling for the GaN devices are crucial for their applications. An improved large signal model for AlGaN/GaN HEMTs including comprehensive thermal effect is proposed in this work. To obtain accurate description of the thermal effect, the influence of the temperature on all the Angelov empirical model parameters like extrinsic resistance is studied. These parameters counting the thermal...
In this paper an analytical model is developed to characterize the performance of GaN-based microwave HEMTs. To theoretically predict mobility and sheet carrier concentration in 2-dimentional electron gas (2DEG) of GaN HEMTs extraction procedure is proposed. Presented model is based on physical relationships and I–V characteristics without introducing any semiempirical parameter. Results are compared...
This work includes the simulation and analysis of characteristics such as carrier profile, DC characteristics, trapping behaviors, and transient response of the device In this paper, the heterojunction field effect transistor with a graded AlGaN structure is crested and its characteristics were analysed and attempt were made to improve its characteristics. The DC and transient analysis were carried...
A compact model of GaN HEMT is developed, which solves the Poisson equations explicitly. The model includes all possible charges induced within the device including the trap density. It is verified that the model can reproduce all 2D-device simulation results accurately. In particular, the operation frequency dependence of the current collapse can also be captured accurately by adjusting the trap...
A closed form analytical expression for the 2DEG (channel charge) in AlGaN/GaN HEMT is presented. This includes the effect of transverse electric field on the piezoelectric bound charge due to electromechanical coupling. The present model explains the dependence of bound piezoelectric charge and channel 2DEG concentration on gate bias. Models with and without electromechanical coupling are compared...
The continuum equations describing the fully coupled electrical, mechanical and thermal behaviors of GaN devices are presented and illustrated with a variety of examples from RF and power electronics.
In this article, we used AlGaN/GaN high electron mobility transistors (HEMTs) to construct the first label-free semiconductor-sensor-based binding assay to our knowledge. Our results suggested that the nucleotide-c terminal domain of SARS coronavirus (SARS-CoV) nucleocapsid protein interaction is a two-step binding event with two dissociation constants (Kd1 = 0.052 nM, and Kd2 = 51.24nM) extracted...
A fully selfconsistent, coupled electro-thermo-mechanical model for nitride-based devices is presented and applied to a high-power AlGaN/GaN High Electron Mobility Transistor (HEMT). The influence of converse piezoelectric effect, thermal stress and of the selfconsistent coupling on the static device characteristics and on the stress distribution in the device is studied.
As a tool for studying the critical issue of reliability in GaN HEMTs we develop a multi-dimensional device simulator based on a continuum formulation in which the electrical, mechanical, thermal and transport variables are fully coupled. The new simulator is illustrated with various examples involving HEMT operstion and failure.
Field-Effect Transistor models have been developed using both equivalent circuit based and physical modeling techniques. The equivalent circuit models have been extensively developed and are in common use. The physics-based models have lagged in development, but are now emerging as viable alternatives as compact models. The various FET and HFET modeling approaches are discussed.
In this paper, we take account of spontaneous and piezoelectric polarization effect of BST and AlGaN. At the hetero-interface in BST/ Al0.3Ga0.7N /GaN double heterostructure, one-dimensional Poisson-Schrodinger equation using nonuniform mesh are solved self-consistently in dependence of the polarization and thickness of BST and the thickness of AlGaN barrier layer. BST/Al0.3Ga0.7N/GaN double heterostructure...
In this paper we present state of the art modeling of GaN HEMTs, which includes for the first time simultaneous consideration of the electromechanical coupling, short-range Coulomb and quantum mechanical size quantization effects.
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