The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this work, we present a theoretical derivation of the analytical formula for tunneling probability through an n-layer barrier basing on the Wentzel-Kramers-Brillouin (WKB) and the effective mass approximations. The accuracy of the derived formula is analysed by comparison with the transfer matrix method (TMM). The effect of the electric charge distribution in a stack on the tunnel current is considered.
Nanomagnet logic (NML) emerges as a new field of spintronics. For NML operation, strong external magnetic clocking field pulses are required. The power-efficient generation of such fields is a challenge for magnetic computing. The idea of clocking Co/Pt nanomagnets with stray field from the domain wall of a Permalloy stripe was proposed in the earlier study. Here, we present a micromagnetic investigation...
Computational analysis on the emission properties of ZnO nano wires (NWs) and coreshell quantum dots (QDs) have been made by considering the effects of scattering mechanism of the incident field and the total electric field from the surface of varied substrates. Simulation results indicate that the substrate (GaAs) having the highest emission intensity showed maximum light scattering from its surface...
Particle simulation techniques utilizing classical or quantum weights commonly involve a phase space grid for the calculation of averages. Properties of alternative particle-grid simulation strategies are investigated by using an experiment highly sensitive to variance. It is provided by the fine structure of entangled electron states subject to scattering with phonons. As the process of evolution...
A relation called scaling theorem is formulated, which estimates how physical scales determine the choice between classical and quantum transport regimes.
Nanomagnet Logic (NML) is widely considered to be one of the promising for “beyond-CMOS” nanoscale architectures. So far only relatively simple circuits (nanomagnetic logic gates and adders) have been studied experimentally and in simulations. Here we investigate the possibility of building larger-scale computing devices from out-of-plane NML. We designed a systolic pattern matcher circuit that is...
We present an extended hydrodynamic model describing the transport of electrons in the axial direction of a silicon nanowire. This model has been formulated by closing the moment system derived from the Boltzmann equations on the basis of the maximum entropy principle of Extended Thermodynamics, coupled to the Effective Mass and Poisson equations. Explicit closure relations for the high-order fluxes...
In this paper we present an improved version of the Electrothermal Monte Carlo method. This modification has better approximation properties due to reduced statistical fluctuations. Simulation results in 2D structures are presented.
The aim of this work is to show the dependence of the time dependent current of gate-all-around transistors on their geometries and thus to find out how to optimize their intrinsic AC behavior. The Ramo-Shockley-Pellegrini (RShP) theorem and many-particle Monte Carlo technique are used, through the recently developed BITLLES simulator which is devoted to simulate classical and quantum electronic devices,...
This paper presents the study of electron mobility in intrinsic silicon nanowires using the Kubo-Greenwood approach. This architecture (now considered as a realistic technology [1,2]) is aimed for ultra-scaled devices up to technology nodes sub-11nm [3] with silicon films of some nanometers. At these dimensions, the transport regime is completely modified due to the multi-subband transport. However,...
A nanoscale ring structure, typically referred to as an Aharonov-Bohm (AB) ring, with a quantum dot (QD) embedded in each arm serves a unit cell in a chain-like structure. The transmission through the device is presented as a function of the number of rings in the chain. Zeeman-splitting of the QD energy levels is also modeled and its effects are analyzed. Distinct transmission bands form as the ring...
A fully selfconsistent, coupled electro-thermo-mechanical model for nitride-based devices is presented and applied to a high-power AlGaN/GaN High Electron Mobility Transistor (HEMT). The influence of converse piezoelectric effect, thermal stress and of the selfconsistent coupling on the static device characteristics and on the stress distribution in the device is studied.
The 3D Monte Carlo simulation of an Si dot-based double-tunnel junction shows not only the possibility of shot noise suppression down to the Fano factor of 0.5, but also of super-Poissonian noise in the case of multi-state process. The counting statistics of the tunneling events provides a clear interpretation of the different noise regimes according to the balance between the different tunneling...
A Numerical study of amplification of space charge waves (SCW) due to the negative differential conductivity in n-GaN films placed onto a semi-infinite substrate is investigated. A case of transverse non-uniform film is considered. The set of balance equations for concentration, drift velocity, and the averaged energy to describe the dynamics of space charge waves were used jointly with the Poisson...
Metallic property and Ohmic conduction in densely phosphorus δ-doping ultra-thin silicon nanowires (Si:P NWs) are studied. A 10-band sp3 d5 s∗ tight-binding approach is used to describe device electronic structures atomistically. Electrostatics at equilibrium are self-consistently calculated with our in-house 3-D parallel Schrödinger-Poisson solver that is coupled to the Local Density Approximation...
We have developed a computer program that simulates the electrical characteristics of a p+ − n HgCdTe photodetector. Using solutions to the Poisson and Continuity equations we investigate low temperature behavior to determine optimum working conditions to enhance detectivity. Our model considers complete Fermi — Dirac statistics, major recombination mechanisms, band to band tunneling, trap assisted...
The impact of exchange and correlation (XC) in the current voltage characteristic of a gate-all-around Si nanowire transistor has been thoroughly investigated in the context of ballistic and dissipative transport. The electron transport is described using the Non Equilibrium Green Function formalism (NEGF). The XC potential is evaluated in the local density approximation. Transfer characteristics...
We propose a model for the numerical simulation of a two-terminal scanning gate spectroscopy experiment on bilayer graphene in the Quantum Hall regime. We start from the Chalker-Coddington random network model and link the model parameters with some of the relevant quantities in the experimental setup. The comparison between the simulation and the measurement results show a good qualitative and in...
A performance of two n-type III-V MOSFET based on an In0.3Ga0.7As channel architecture: a surface channel design with implanted source/drain contacts and a δ-doped, implant-free design, is compared when scaled to gate lengths of 35 nm, 25 nm and 18 nm. The transistor characteristics are simulated using ensemble heterostructure finite element Monte Carlo device simulations assisted by drift-diffusion...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.