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Cubic silicon carbide (3C-SiC) has received a great deal of attention since it is a suitable material for electronic and MEMS devices operating in harsh environments. But difficulties still exist in realizing high throughput of high quality material. In the present paper, 3C-SiC layers have been grown on Si(111) in a vertical multi-wafer WCVD (Warm-wall Chemical Vapor Deposition) reactor with a rotating...
We present for the first time a detailed study on the effect of various pre-cleaning methods on the formation of the low resistance Ni-silicide from the nickel film deposited by ALD system. Four types of samples were prepared on 6 inch p-type Si (100) wafers.
Self-assembled configurations of nanostructures are expected to play an increasingly important role in devices design, as an alternative to conventional microelectronics technology. Conventional techniques are generally limited by the lack of simultaneous control on positioning, density and size uniformity of the nanostructures. To overcome these problems a new substrate based on controlled direct...
With Vanadium ion implantation semi-insulating 4H-SiC layer has been investigated. For n-type and p-type 4H-SiC, resistivities have been reached 7.6times106middotcm and 1.6times1010middotcm respectively after 1650degC annealing. Perfect surface morphology has been observed using a simple Carbon coating film protection. The Vanadium energy levels in forbidden band of n-type 4H-SiC were confirmed as...
Formation of bump defect on the surface of silicon nitride film deposited on top of phosphorus doped amorphous silicon layer was studied. The bump defect formation was found to be caused by localized phosphorus segregation on polysilicon surface. Wet chemical treatment of silicon surface involving HF- H2O2 chemistries were found to reduce bump defect formation.
In this study, we investigated the influence of atomic step morphologies of 4H-SiC surfaces on the distribution of threading edge and screw dislocations in GaN films grown by MOCVD. Electron channeling contrast imaging (ECCI) was implemented to profile engineered 4H-SiC mesas. Two types of atomic morphologies were consistently observed at these mesa surfaces. Mesa surfaces with no screw dislocations...
Since the properties of the polycrystalline 3C-SiC thin film heteroepitaxially grown on Si (n-type, p-type) or SiO2/Si is superior to any other that of single crystal SiC, it has attractive potentials for hash environments-, RF-, Bio-M/NEMS. Thus, we have investigated the electronic characteristics of the diodes having that a p-n junction diode was fabricated with 3C-SiC on p-type Si substrate, and...
We report on the deposition of SiC-layers in a newly constructed high-temperature chemical vapor deposition system. With this system SiC-layers are deposited onto tape-casted SiC-ceramic substrates (10/spl times/10 cm/sup 2/) at deposition temperatures ranging from 1200 to 1450/spl deg/C to study the chemical stability, the smoothness, and the electrical resistivity of the SiC-layers. The SiC-layers...
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