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Formation of bump defect on the surface of silicon nitride film deposited on top of phosphorus doped amorphous silicon layer was studied. The bump defect formation was found to be caused by localized phosphorus segregation on polysilicon surface. Wet chemical treatment of silicon surface involving HF- H2O2 chemistries were found to reduce bump defect formation.
Silicon nitride films are used as oxidation barriers, mobile ion barriers, hard masks and capacitor dielectrics in integrated circuit manufacturing. Properties of silicon nitride layers are characterized relative to physical, optical, chemical and electrical aspects that pertain to specific applications. The process integration of silicon nitride within a device structure depends upon uniformity and...
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