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Cubic silicon carbide (3C-SiC) has received a great deal of attention since it is a suitable material for electronic and MEMS devices operating in harsh environments. But difficulties still exist in realizing high throughput of high quality material. In the present paper, 3C-SiC layers have been grown on Si(111) in a vertical multi-wafer WCVD (Warm-wall Chemical Vapor Deposition) reactor with a rotating...
This work presents the properties of nanocrystalline SiC(nc-SiC) films prepared by plasma enhanced chemical vapour deposition. A p-type silicon wafer with resistivity 2-7 Ωcm and (100) orientation was used as the substrate for the nc-SiC:H films. The concentration of species in the SiC films was determined by RBS and ERD. Chemical compositions were analyzed by IR spectroscopy. Film morphology was...
The SiC thin Alms were successfully fabricated on P-type <100> oriented silicon substrates at comparatively low temperature via DC magnetron sputtering deposition using a sintered SiC target with DC power of 120 W. The deposition argon pressure was constantly at 2.0 Pa. The as-grown SiC films were characterized by using X-ray diffraction, atomic force microscope (AFM) and profilometer. The low...
In-N co-doped P-type ZnO films were prepared on SiO2 and glass substrates by IBED method. The structural, optical and electrical properties were characterized by XRD, XPS, AFM and Hall test. The tests results show that the film was polycrystalline with a preferred (002) orientation. The resistivity, mobility and carrier concentration was 1.6times10-3 Omegamiddotcm, 35.9 cm2/VmiddotS and 1.66times10...
3C-SiC thin film is widely used extreme environment, RF and Bio-material in micro/nano electronic mechanical systems (M/NEMS). Mechanical properties of 3C-SiC thin films are required in the designing stage, because it is needed to accurately measuring Youngpsilas Modulus and hardness. The Youngpsilas Modulus and hardness is influenced by N-doping. In this paper, it was showed that the mechanical properties...
Based on the theory of superhydrophobicity for low surface energy coatings, we describe a superhydrophobic antistiction silica coating for MEMS devices. The process uses a novel sol-gel process sequence with a eutectic liquid as a templating agent. The eutectic liquid displays negligible vapor pressure and very low melting point (12degC at ambient conditions) to reduce solvent loss during the high...
A capacitive coupled plasma reactor was used for PECVD technology, where both silan and methane were introduced into the plasma reactor through the shower head. The concentration of species in the SiC films was determined by RBS and ERD. Chemical compositions were analyzed by IR spectroscopy. Film morphology was assessed by AFM. The RBS results showed the main concentrations of Si and C in the films...
The structural and electrical evolution process of gate dielectric breakdown (BD) is investigated by conductive atomic force microscopy (CAFM) with ultrathin SiO2 films. The degradation mode is found to be quite different from that in the case of thick films. Both the structural deformation at the pre-BD stage and the lateral expansion from degradation are found to be less pronounced with decreasing...
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