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A highly digital temperature sensor based on the temperature-dependent thermal diffusivity of bulk silicon has been realized in a standard 160-nm CMOS process. The sensor achieves an inaccuracy of ±2.9 °C (3a) from −35 °C to 125 °C with no trimming and ±1.2 °C (3a) after a single-point trim, while achieving a resolution of 0.47 °C (rms) at 1 kSa/s. Its compact area (2800 μm2) is enabled by the adoption...
A low power voltage reference is implemented in a standard 0.18 μm CMOS process. The temperature coefficient (TC) of 7 ppm/°C is achieved in virtue of the output stage which consists of two transistors operating in subthreshold region and saturation region respectively. This kind of output stage is used to adjust the output voltage and compensate the curvature. The line sensitivity is 200 ppm/V in...
A photonic temperature sensor based on an active silicon CMOS resonator was proposed and built. It features a simple measurement scheme, a high sensitivity and a wide operation range.
A fast-lock all-digital register-controlled delay-locked loop (RCDLL) with wide-range duty cycle adjuster is presented. The architecture of the proposed fast-lock RCDLL uses the initial delay monitor without the delay line, which shares with the register controlled delay line for high accuracy of initial delay. Also, the duty cycle corrector of the DLL has achieved wide correction range to a small...
A novel voltage reference based on Kujik bandgap is proposed in this paper. An extra amplifier and bipolar are used to produce a current of positive temperature coefficient, which is for compensating the Kujik bandgap reference in high temperature. The reference finally has a temperature coefficient of only 10 ppm/°C. A negative feedback loop is introduced to provide a pre-regulated power supply for...
A temperature sensor utilizing NPN transistors has been realized in a 65 nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5°C (3σ) and a trimmed inaccuracy of ±0.2°C (3σ)from -70°C to 125°C The sensor draws 8.3 μA from a 1.2 V supply and occupies an area of 0.1 mm2.
A temperature sensor based on the thermal diffusivity of IC-grade silicon has a near-linear digital output, which is insensitive to both process spread and packaging stress. Its accuracy is mainly limited by lithographic errors and thus benefits from scaling. An implementation in a 0.18 μm CMOS process has an untrimmed inaccuracy of ±0.2°C (3σ) from -55°C to 125°C.
This paper presents a battery-less tire pressure monitoring system. Electro-magnetic field energy harvesting is utilized. The chip is also capable of RFID in a frequency range from 1MHz to 2.45GHz. The sensor data is transmitted either by an active transmitter at 868MHz or by employing the RFID feature. A bulk acoustic wave resonator is used as frequency reference for the active transmitter. An external...
A temperature compensated 1.5 GHz FBAR-based frequency reference implemented in a 0.35 mum CMOS process is presented. The ultra-small form factor and low power dissipation of a temperature compensated FBAR oscillator presents a promising alternative for replacement of quartz crystal frequency references. The measured frequency post-compensation drift over a 0-100degC temperature range is <20 ppm...
The effectiveness of a new offset compensation technique for integrated thermal flow meters is demonstrated. A sensor structure based on two heaters placed between two temperature probes is designed with a commercial CMOS process and fabricated by means of a post-processing technique. The power unbalance between the two heaters is used to compensate the intrinsic sensor offset. Experiments, performed...
The paper presents a CMOS-compatible micro-Pirani sensor which consists of the tungsten micro-hotplate and the constant current circuit based on the operational amplifier. The advantage of the constant current circuit for the micro-Pirani sensor is that it is more sensitive than the constant temperature one in the low gas pressure. The micro-Pirani system is implemented in an industrial 0.5-mum CMOS...
A supply voltage (VDD) independent temperature sensor circuit by a standard 90 nm CMOS process achieves the predicted errors about -1.0 to +2.0degC (-0.6 to +0degC) for the temperature range of -20 to +100degC (+20 to +80degC) for two-point calibration lines. This temperature sensor has a good tolerance to the change of VDD from 2.5 to 1.5 V, which corresponds to the measurement error of 0.9degC.
This paper investigates the performance of diode temperature sensors when operated at ultra high temperatures (above 250degC). A low leakage silicon on insulator (SOI) diode was designed and fabricated in a 1 mum CMOS process and suspended within a dielectric membrane for efficient thermal insulation. The diode can be used for accurate temperature monitoring in a variety of sensors such as microcalorimeters,...
A resistance deviation-to-time interval converter is presented for interfacing resistive sensors. It consists of two voltage-sources, a ramp integrator, a pair of comparator, and two logic gates. The proposed converter was designed and built on 0.35 mum CMOS process. The prototype circuit exhibits a resolution as high as 13 bits, a linearity error less than plusmn 0.1%, and environment-independent...
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