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The Plenary Session begins with opening remarks and a welcome to attendees from the Conference Chair, Anantha Chandrakasan. Then the Program Chair, Albert Theuwissen introduces the first of four Plenary speakers. Following the second Plenary speaker, the Session pauses for an Awards Presentation moderated by the Conference Chair, followed by a break. After a short break, the third and fourth Plenary...
This presentation provides an overview of current MEMS technology, its applications, and market share. MEMS-fabrication processes are described, and the challenges of MEMS compared to standard IC techniques are discussed. After a description of the evolution of MEMS, the presentation provides a short survey of MEMS applications. Then, the principles of the newest inertial sensors for ESP-systems are...
The current mobile-handset market is a vital and growing one, being driven by technology advances, including increased bandwidth and processing performance, as well as reduced power consumption and improved screen technologies. The 3 G/4 G handsets of today are multimedia internet devices with increased screen size, HD video and gaming, interactive touch screens, HD camera and camcorders, as well...
Due to steady advancements in semiconductor technology, greatly-enhanced memory capacity and high-speed data processing are now available, creating many evolving types of audio and video electronic products. The digital camera represents this trend well, where image sensor evolution has been responsible for enabling strong market growth. CCD image sensors have contributed to the miniaturization of...
The paramount economic development of the past half-century has been the information revolution (IR). It has given us the personnel computer, the multi-media cell phone, the Internet, and countless other electronic marvels that continuously influence our lives.. The most powerful technological driver of the IR has been the silicon microchip, for two compelling reasons: First, since 1960 the productivity...
Several thematic areas are covered in this session. Advances in integrated phased arrays for millimeter-waves are described in the first part, followed by circuit techniques for mobile communications, and finally an ultra-low-power RF-ID for sensor applications is presented.
A true time-delay-based bandpass multi-beam matrix at mm-Waves is introduced that is suitable for applications with instantaneously wide bandwidth signals and for MIMO systems. A 0.13 ??m SiGe BiCMOS chip prototype covers the 30-to-40 GHz frequency range instantaneously and supports 6 channels while producing 7 simultaneous beams with 18?? spatial resolution and ??54?? of spatial coverage.
A programmable analog baseband beamformer for a 4-antenna 60 GHz phased-array receiver is implemented in 40 nm digital CMOS. It is based on current amplifiers employing shunt feedback. The phase shifter resolution is better than 20??, with a bandwidth of 1.7 GHz, power consumption of 35 mW, input-referred noise current of 170 nArms and output IP3 of -6 dBV.
A 60 GHz-band 2??2 phased-array transmitter with independent tuning of vertical and horizontal polarizations is implemented in 65 nm bulk CMOS. Two-dimensional phase tuning via LO phase shifting is implemented in a transmitter that adopts zero-IF upconversion with dynamic DC biasing to minimize LO feedthrough. The 2.9??1.4 mm2 chip consumes a total of 590 mW from a 1 V supply when driving all 4 channels...
A push-pull Class-AB CMOS PA is implemented using a broadband load-pull matching technique. The amplifier achieves a -3 dB bandwidth of 5.2 to 13 GHz with +25.2 dBm peak Psat and 21.6% peak PAE. The EVM for QPSK (4.5 MS/S) and 16 QAM (5 MS/s) are below 2.9% and 6.8% at 1 dB compression point. The measured BER for a wideband BPSK signal up to 7.5 Gb/s is less than 1013.
A passive-mixer-first receiver in 65 nm CMOS is presented where baseband feedback resistors provide a tunable impedance match to the RF port using the transparency property of passive mixers. Tuned to an S11<-12 dB, the circuit achieves >27 dBm wideband IIP3, <6 dB NF and >70 dB of gain with 60 mW power consumption.
A 3.3 GHz DCO that achieves a minimum frequency quantization step of 150 Hz without any dithering is presented. The fine digital tuning is obtained through a capacitive degeneration of a portion of the transistor switching pair used in a classical LC-tank oscillator. The DCO exhibits a phase noise of -127.5 dBc/Hz@1 MHz drawing 16 mA from a 1.8 V supply, resulting in an FoM of 183 dBc/Hz. The active...
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