The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Two unique gate oxide failure mechanisms are associated with deep trench processes for a 0.18 µm power semiconductor device. One failure mode is a “mini-LOCOS” defect, that is due to inadvertent oxidation of Si in the active area during deep trench oxidation. The other failure mode is due to slip associated with dislocations from the deep trenches. These defects are eliminated by optimizing the SiN...
Loss angle measurements in ultralow mechanical loss materials are normally affected by a large systematic error due to the excess losses introduced by the suspension system used to hold the samples. Low loss materials are of great interest for ground-based interferometric detcors for gravitational wave observations. Crystals such as sapphire and silicon or amorphous materials such as fused silica...
Annealing series were performed to investigate the thermal behaviors of intrinsic defects in unintentionally doped 4H-SiC prepared by Low Pressure Chemical Vapor Deposition (LPCVD). Only one Electron Spin Resonance (ESR) peak and a wider green-yellow photoluminescence (PL) band are detected, which means the native defects consist of carbon vacancy (VC) and complex-compounds-related VC. The total concentration...
In this paper, we have investigated bulk trap and interface trap density (Dit) caused by millisecond annealing (MSA) using gate current fluctuation (GCF) and charge pumping measurements. We show that the high energy flash lamp annealing (FLA) creates the GCF with a long duration time and it is critical issue to get a stable SRAM operation. FLA creates interface traps localized at the gate edge of...
In this work, C-V characteristics of MOS capacitors fabricated by depositing SiO2 by plasma-enhanced chemical-vapor-deposition at low temperature (300 °C) on an N-type GaN epitaxial layer using different technological procedures have been performed to analyze the quality and reliability of the resultant SiO2/GaN interface in MOS structures. C-V measures at different temperatures have been also performed...
The SiO2/SiC interface limits optimum SiC MOSFET performance due to a high density of interface states (D????), which is reduced in devices that receive post-oxidation NO-annealing. Also, the interface state density in the 6H polytype is generally lower, approaching that of the NO treated 4H. In this work, interface states are investigated in both as-oxidized (AO) and NO-annealed (NO) MOS capacitors...
Eu-doped silicon-rich silicon oxide (SRSO) films on P (100) Si substrate were deposited by electron beam evaporation (EBE). The effect of annealing procedure on the photoluminescence (PL) has been investigated in detail. Experimental results show that after 1100degC annealing at non-reductive atmosphere, the films are revealed to yield an intense broad band yellow light emission. PL spectra of the...
The effect of H plasma exposure parameters, such as power, pressure and temperature, on the Si-SiO2 interface is investigated. Inductively coupled photoconductivity decay measurements indicate an increase in carrier recombination at the surfaces following atomic hydrogen exposure, as measured by an increase in the emitter saturation current density. This increase is chiefly due to the generation of...
With Vanadium ion implantation semi-insulating 4H-SiC layer has been investigated. For n-type and p-type 4H-SiC, resistivities have been reached 7.6times106middotcm and 1.6times1010middotcm respectively after 1650degC annealing. Perfect surface morphology has been observed using a simple Carbon coating film protection. The Vanadium energy levels in forbidden band of n-type 4H-SiC were confirmed as...
Photovoltaic and photoconductive properties of ultra-thin a-Si/SiO2 multilayers grown by PECVD and annealed at 1150degC were studied. A quantum yield greater than one is observed due to secondary carrier generation from interface trap states.
The relevance of charge pumping (CP) measurements for addressing reliability issues is investigated. This analysis points to the formation of defects in the interfacial SiO2 layer induced by the high-k film and enhanced when increasing the high-k thickness or the temperature anneal. Then, combined with stress under substrate injection regime, CP reveals a generation of defects within the interfacial...
This paper reports on the radiation induced attenuation of light at 1310 nm and 1550 nm in 12 commercially available single mode (SM) optical fibres. The fibres samples are exposed to gamma rays from a 60Co source and to a high energy physics radiation field. The attenuation is studied as a function of total dose, dose rate, light power and temperature. Radiation resistant fibres from one manufacturer...
In this work MOS capacitors with anodic oxides (9 nm) were elaborated.The anodic silica films (SiO2) were produced by anodization of monocristalline silicon wafers in pure water in an electrolysis cell (P.T.F.E) at ambient temperature, with a constant current density of 20 muA/cm2. Film thickness increases linearly as a function of total charge during oxidation. The oxides are characterized by current-voltage...
We obtained that the defect center responsible for the 2.0 eV band is the NBOHC. Two kinds of the NBOHC (NBOHC:Si and NBOHC:H) were proposed based on the experimental results.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.