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A new millisecond, flash lamp annealing (FLA) tool has been developed. Building on the current tool's wide range of annealing times and temperatures, the new FLA tool is equipped with an ambient control system that can establish a reduced pressure and/or an NH3 reactive-gas ambient. These features have an advantage in gate stack anneals compared to conventional second order annealing: FLA prevents...
The ferroelectric behavior of capacitors based on hafnium oxide dielectrics is reported. Thin films of 7–30 nm thickness were found to exhibit ferroelectric polarization-voltage hysteresis loops when integrated into TiN-based metal-insulator-metal capacitors. A remanent polarization up to 25 µC/cm2 and a coercive field of about 1 MV/cm was observed when Si:HfO2 was used as a ferroelectric material...
We report the fabrication of highly scaled sub-0.3 μm ferroelectric field-effect transistors on the basis of ferroelectric HfO2. The electrical properties of 9 nm thick Si-doped HfO2 films depending on the silicon content and the annealing temperature were investigated. The most suitable fabrication conditions for the emergence of ferroelectricity were identified. The ferroelectric properties were...
In summary, we report the first experimental realization of PDs with high-k cap layer, In0.1Ga0.9N/HfO2, and then, we keep work to study variation of HfO2 thickness and annealed conditions were used to control and optimize the PDs characteristic.
A carbon nanotube (CNT) growth process on HfO2 is reported for the first time for application in nano-sensors. The process uses a combination of Ge nanoparticles and ferric nitrate dispersion and achieves an increase in CNT density from 0.15 to 6.2 mum length/mum2 compared with the use of ferric nitrate dispersion alone. The growth process is validated by the fabrication of back-gate CNT field-effect...
In this study we report on HfO2/La2O3/Ge gate stacks grown by MBE with varying thicknesses of La2O3 for MOS capacitors and pMOSFETs. Negative threshold voltages, around -0.8 V, in combination with scaled devices with an EOT of 1.4 nm shows good characteristics for the La2O3 as a passivation for Ge. Also the effect of various post-metallization anneals in oxygen and forming gas is shown to improve...
The effects of trace amount of nitrogen doping on the electrical characteristics of thin hafnium oxide have been studied. The chemical compositions and bonding structure of the dielectric film have been explored with x-ray photoelectron spectroscopy (XPS) measurements. Current-voltage (I-V) and capacitance-voltage (C-V) measurements have been conducted on nitrogen-doped hafnium oxide samples and to...
The dielectric study of HfO2 thin films deposited on the platinized silicon substrate using RF-sputtering deposition technique have been carried out in the metal-insulator-metal (MIM) configuration over a wide temperature (300 to 500 K) and frequency (100 Hz to 1 MHZ) ranges. The film were deposited at pre-optimized sputtering voltage of 0.8 kV, substrate bias of 80 volt and annealing temperature...
In this paper, we investigated the broad sensitized luminescence properties of the Er-doped HfO2 films synthesized by pulsed laser deposition and ion implantation techniques, focusing on the mechanism of energy transfer in host matrix. The characteristics of photoluminescence (PL) in the Er-doped and undoped HfO2 films were analyzed with varied measuring temperatures. Based on the PL and PL excitation...
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