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Sn is the base element of all the promising electronic solders, and Ni-7wt.%V is the major diffusion barrier layer material of flip chip technology. Interfacial reactions in the Sn/Ni-7wt.%V couple at 250°C are examined in this study. The Ni3Sn4 phase is observed in the Sn matrix. Two phase layers, Sn-Ni-V ternary phase (T phase) and a mixture of the nano-crystalline V2Sn3 phase and Sn phase (T2 phase),...
Automotive industries require new technologies to fulfil the electrical and hybrid vehicle applications. The current substrate materials for power module are not suitable for these applications because of the performance (mismatch in CTE for copper lead frame for instance) and the cost (high manufacturing cost and poor machinability for DBC AlN substrate for instance). The aim of the investigation...
PZT films were deposited by a sol-gel method on platinized silicon substrates with different types of layer materials, such as silicon nitride and silicon oxide. The crystallographic orientations of the PZT films were controlled by combined parameters of a chelating agent and pyrolysis temperature. A nanoindentation CSM (continuous stiffness measurement) technique was utilized to characterize the...
SiC power devices were die bonded to a AlN/Cu/Ni(Au) direct bonded copper (DBC) substrate with a Au-Ge eutectic solder in a vacuum reflow system. The long term joint reliability of the bonded chips was evaluated at 330degC in air for up to 1600 hours. The bonded samples were inspected with a micro focus X-ray TV system. The microstructure of the samples was observed and analyzed by the scanning electron...
This work presents the influence of post-annealing on mechanical and electrical properties of boron-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited on Corning 7059 glass and Si substrate by plasma enhanced chemical vapor deposition (PECVD) technique. The basic mechanical properties of the films are measured by means of nanoindentation system. Using a four point resistivity...
The tendency of high efficiency and high power density of power inverters needs three-dimensional (3-D) packaging techniques for power module packaging. In a 3-D power device packaging, it is necessary to bond electrodes to a substrate or other chips by solders. However, the "upper" electrodes of most power devices are metalized with Al and are very difficult to be directly bonded to a substrate...
As IC performance increases, many technical challenges appear in the areas of current-carrying capacities, thermal management, I/O density, and thermal-mechanical reliability. To address these problems, the use of aligned carbon nanotubes (CNTs) has been proposed in IC packaging for electrical interconnect and thermal interface materials (TIMs). The theoretically superior electrical, thermal, and...
In the continuing thrust to extend Moorepsilas law, silicon is beginning to confront several issues that require innovative materials solutions to increase transistor and interconnect speeds while dealing with the increasing thermal loads of advanced microprocessors. The unsurpassed thermal, electrical and mechanical properties of diamond can be used to solve some of the thermal issues and enhance...
Piezoelectric materials have a strong interaction between the mechanical and electrical properties that translates into innovative components and circuits architectures. A novel technique for the determination of the piezoelectric coefficients d31 is introduced. The technique utilize the interaction between mechanical and electrical properties in piezoelectric material. Both; the classical parallel...
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