The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Thin films of ZnO were deposited on cleaned soda lime glass substrates by using RF magnetron sputtering technique for deposition time of 20mins, 40mins, 60mins, 80mins and 100mins at room temperature. The structural and electrical properties of ZnO thin films were obtained from X-ray diffraction (XRD), Atomic force microscopy (AFM) and Hall Effect measurement. XRD results confirm the presence of (002)...
Beta indium sulfide (β-In2S3) thin films were deposited by Chemical Spray Pyrolysis technique, a fast, cost effective and vacuum free method with alcoholic and aqueous solution using InCl3 and thiourea as source of indium and sulfur respectively. All films were deposited onto glass substrate with different temperatures. Characterization of the films was carried out by X-ray diffraction (XRD), Scanning...
ZnO thin films have been deposited on Si (111) substrate by ultrasonic spray pyrolisis (USP) with various growth temperatures. The polycrystalline of ZnO thin films have preferred plane (002) and relatively low donor concentrations comparing with GaN. Optically, photoluminescence (PL) spectra show the UV emission increased with increasing growth temperature. Nevertheless, green emission does not increase...
Bismuth Telluride (Bi2Te3) and Antimony Telluride (Sb2Te3) are the preferable materials for building thermoelectric devices. Pulsed Laser Deposition (PLD) is one of the techniques used to grow these materials. To study the effect of temperature growth on the properties of the materials, thin films were PLD-deposited on n-type Silicon substrate in Argon (Ar) atmosphere. Substrate temperatures changed...
Transparent and electrically conductive (TCO) thin films of ZnO:Al, ZnO:Ga and ZnO:Sc, used in solar cells as well as optoelectronic devices, have been successfully deposited by rf magnetron sputter deposition using ZnO(98%) / X2O3(2%) ceramic target, X ∈{Al, Ga, Sc}, in the inert atmosphere of argon. In this contribution we focused on the changes in physical properties and their comparison in dependence...
In this paper, Ti-doped ZnO TFTs on SiO2/Si substrates by simultaneous RF sputter of Zn and DC magnetron sputter of Ti are successfully fabricated. With undoped ZnO TFTs, as-grown Ti-doped ZnO are compared with post-annealed Ti-doped ZnO TFTs in the furnace at O2 atmosphere of 300 °C. As the annealing time increases, the electrical characteristics such as sub-threshold slop (SS) and on/off current...
We report data on the relative EBSD grain sizes for HWCVD a-Si:H films which have been sub-threshold laser illuminated prior to thermal annealing compared to films which have undergone no prior laser processing. For laser processed and thermally annealed films which exhibit a reduced incubation period τo, the EBSD grain sizes are not changed compared to those for the same film which is annealed directly...
AuAl alloys prepared by thermal diffusion on p-type silicon (100) substrates were studied. Au/Al bilayers were prepared with 50%:50% as atomic concentration and 100 nm as total thickness. The formed Au/Al/Si systems were annealed from room temperature (RT) to 400??C in a vacuum oven with Argon atmosphere to form the AuAl alloys by thermal diffusion at different times (1, 2, 4 and 6 h). Prepared alloys...
The present paper addresses the formation and evolution of microstructure and crystal structure of electroplated copper columns. Copper columns of different size have been plated on Au seed layer for a series of periods of time from half an hour to three hours and characterized by Focused Ion Beam (FIB) and XRD. It was found that not only the growth process during plating but also accompanying recrystallization...
Hydrogenated silicon (Si:H) thin films were deposited at a selected argon diluting ratio under varied RF power density and the influence of it on nanocrystallization was studied by XRD, FTIR and Raman spectroscopy.
Nanostructured copper(II) oxide film was deposited using reactive DC magnetron sputtering. It has been characterized using XRD, EDAX, XPS, and FESEM. The grain size of copper oxide film was found to be 40-65 nm with size distribution. The entire study was divided into two parts. In the first part, the film has been studied for its response to alcohol at different temperatures to find the optimum sensing...
The effect of the ZnO homo-buffer layer on the structural, optical and electrical properties of the Sol-gel ZnO films was systematically investigated. The XRD and SEM results show that the homo-buffer layer can improve the degree of the preferential c-axis orientation (the best Lotering orientation factor (F) can reach 0.915), the grain size and the surface morphology of thereon ZnO films. A narrower...
This study reports on carbon and tungsten deposition on a heated silicon substrate under He+ bombardment in a magnetron sputtering device. The discharge was operated at constant pressure of 1.33 Pa for two discharge current intensities (200 mA and 600 mA) and target power density up to 40 Wcm-2. The deposited films were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM)...
Polycrystalline Cu(InGa)Se2 (CIGS) thin films have been grown onto a soda-lime glass substrate by the co-evaporation process using ionized Ga. It was found from the XRD and Raman measurements that the crystallinity of the films grown with ionized Ga was equivalent to the films grown with normal Ga. In addition, a reduction of defect densities measured by the admittance spectroscopy and the improvement...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.