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A rising horizon in chip fabrication is the 3D integration technology. It stacks two or more dies vertically with a dense, high-speed interface to increase the device density and reduce the delay of interconnects significantly across the dies. However, a major challenge in 3D technology is the increased power density, which gives rise to the concern of heat dissipation within the processor. High temperatures...
Due to the strong requirement of the miniaturization of micro electronic products, the development of IC package has been pushed toward to a smaller, thinner, lighter and higher density package structures. For the purpose of mass production, the designs of stack die-attached process should be simplified and wire-penetrated. In this paper, the characteristics of the Die Attach Film (DAF) and Film over...
The following topics are dealt with: advanced interconnects including power electronic packaging, high density electrical interconnect, wafer to wafer bonding, and substrates and conductive adhesives for interconnects; 3D and through silicon via (TSV) integration technology including wafer handling, lithography, metallization, and Cu/low-k stack die FBGA package; signal and power integrity; electronics...
More and more board and chip package RF designs require high-signal density while delivering frequencies in the tens of gigahertz. The challenges for organic substrate in meeting these electrical requirements include using high-speed, low-loss materials, manufacturing precise structures, and making a reliable finished product. In addition, many RF systems have mechanical and environmental requirements...
In this paper the realization of packages and system-in-packages (SIP) with embedded components will be described. Embedding of semiconductor chips into substrates has several advantages. It allows a very high degree of miniaturization due to the possibility of sequentially stacking of multiple layers containing embedded components. A further advantage is the beneficial electrical performance by short...
New types of packaging technology which include the wire bond and flip chip for chip scale package, demand a high wiring density, high I/O density and a high performance, which in turn, narrows the pitch of the substrate so as to achieve the smallest possible package in order to keep up with the trend of the demand for smaller, lighter, and thinner compacted consumer products. This paper discusses...
The innovative embedded circuit approach utilizes an advanced laser ablation technique to form electrical paths for signal propagation within the dielectric, as opposed to conventional technologies, that form signal propagation on the dielectric materials. This technology reveals numerous benefits and opportunities to address the needs of the advanced silicon nodes in the chip packaging industry....
While semiconductor technology progresses at an alarming rate, typically doubling in functionality every couple of years, the substrate portion of the integrated circuit (I.C.) packaging industry continues to fall further and further behind. This has created a significant technology gap, forcing the semiconductor manufacturers to compensate their chip design by adding more redistribution layers or...
The following topics are dealt with: advanced packaging; ASE industry technologies including solder joints, substrate pad metallization and finish, drop impact reliability and failure mechanism, reflow process, mechanical properties of intermetallic compounds, BGA design, and wafer level test; HDI and embedded technology including flexible electronics circuits and modules, Via2-laser embedded technology,...
This paper describes a new CMOS test chip which will be fabricated by students in required CMOS Manufacturing courses in Rochester Institute of Technology (RIT) undergraduate and graduate programs in Microelectronic Engineering. It will be used to expand CMOS technology and verify operation of analog and digital components. Also, the test chip includes a variety of CMOS compatible sensors and signal...
The International Technology Roadmap for Semiconductors (ITRS) reports about the increasing divergence between what technological advances afford (in terms of the number of transistors on a single chip) and the capability to design these complex chips: the ldquoDesign Gaprdquo. The chip design industry evolved into very sophisticated and complex processes needing managerial approaches to master them...
The three-dimensional numerical simulation has been performed to study mold flow characteristics during injection molding process of stacked die packages. The modeling results revealed that flow front shape is highly non-uniform around the die stack-up units and is dependent on various design parameters including mold cap clearance, mold compound material properties, as well as the die stack-up geometric...
This paper describes two important issues associated with CSP package reliability. Failure due to thermomechanical stress is one of the dominant failure causes of CSPs. FE-simulations are frequently used to analyse local stresses and strains in soldered joints under thermal loads. Consequently stress and strain data are a basis for the lifetime estimation of the assemblies. In order to make a design...
Practically all microelectronic assemblies in use today utilize Pb-Sn solders for interconnection. With the advent of chip scale packaging technologies, the usage of solder connections has increased. The most widely used Pb-Sn solder has the eutectic composition. Emerging environmental regulations worldwide, most notably in Europe and Japan, have targeted the elimination of Pb usage in electronic...
The RDL processing module provides an interconnect redistribution layer (RDL) used in flip chip packaging. The processing of this RDL module is explained in detail along with the design rules used RDL processing is shown to be very robust both structurally and electrically. This technique is compared with the industry to show the unique benefits of the AMIS methodology
The structure of chip-in-substrate package, CiSP, is shown. The thin chips (50mum) are bonded on the organic substrate (BT) flatly. Subsequently, the chips are covered among the build-up dielectric layer, which can be either a RCC (resin coated copper) material or an organic dielectric material (ABF) by a lamination process. Via holes on the chip's I/O pad and substrate are drilled by laser. The interconnection...
Systems in package (SiP) allow a greater density of silicon devices (IC) to be mounted directly onto a substrate within a single component package. Further miniaturization in microelectronics system requires 3D integration of active, passive or module components. In order to maintain signal integrity, approaches featuring much shorter, impedance-matched, and less-interconnect-level between chips and...
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