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The silicon MOS transistors for VLSI have been scaled down for more than forty years in order to attain higher speed, lower power, higher integration, and lower cost. The gate length is now less than 30 nm. The silicon devices are certainly in the nanometer regime. Fig. 1 shows technology nodes and gate length according to ITRS [1]. It is predicted in the 2009 version of ITRS that the gate length...
In this paper we propose a new model based on an analytical model for undoped symmetric double gate MOSFETs introduced by Chenming Hu et al. The proposed model targets to include the quantum confinement and the most important short channel effects. The new model results were compared with a device simulator results to validate the proposed modifications. The proposed model introduces low fitting error...
In this paper short channel and self heating effects in dopant segregated Schottky barrier (DSSB) silicon-on-insulator (SOI) MOSFET are investigated in sub-30 nm regime using two dimensional MEDICI simulator. In order to suppress these effects novel structures having dopant segregated Schottky source/drain (S/D) with buried oxide (BOX) only under S/D (DSSB Pi-OX) and DSSB Pi-OX with p-type delta doping...
In this paper we proposed and did an extensive simulation study of a new SELBOX device using a 2D device simulator MEDICI. The proposed structure retains all the advantages of the SELBOX structure and at the same time reduces SCEs significantly and makes further scaling of the device possible in nanometer regime. The proposed device is a partial ground plane (PGP) based MOSFET on SELBOX.
With aggressive MOSFET scaling, short channel effects (DIBL and VTH roll-off), off-state and gate leakage, parasitic capacitance and resistance severely limit the device performance. These, in addition to VDD scaling limitation and high sub-threshold swing (Gt60mv/dec) give rise to high IOFF and make power dissipation, both dynamic and static, an enormous challenge, especially for low power/low current...
Two dimensional numerical simulation of nanoscaled selective buried oxide (SELBOX) based MOSFET is performed. In this device an opening is provided under the device channel in the buried oxide (BOX). A comparative analysis of the SELBOX, bulk and SOI (Silicon-on-Insulator) devices for various performance measuring parameters has been done. The simulation study has revealed that by properly choosing...
We report a CMOS-compatible vertical MOSFET, which incorporates a frame gate architecture suitable for application in RF circuits. Fabricated surround gate vertical MOSFETs with the frame gate architecture show no degradation of short channel effects when the channel length is scaled, while control devices show significantly degraded sub-threshold slope and DIBL. The frame gate vertical MOSFETs show...
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