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We demonstrate the growth of III-Sb buffers on GaAs and Silicon substrates through the use of an epitaxial technique involving the formation of interfacial misfit dislocation arrays that is formed between the III-Sb alloy and the substrate. The interfacial misfit array results in the spontaneous relaxation of the highly mismatched III-Sb semiconductor and provides a platform for the realization of...
Direct integration of GaP/Si must face a small, but non-negligible lattice constant mismatch, which due to thermal expansion differences between GaP and Si, reaches 0.5% at 900 K. This lattice mismatch results in the nucleation of misfit dislocations at the GaP/Si interface, requiring careful strain management and refinement of epitaxial processes. However, Si0.88Ge0.12 virtual substrates grown on...
We demonstrate selectively-grown GaAs nano/micro structures on silicon substrates by molecular beam epitaxy. Hexagonal or rectangular shaped GaAs crystals, depending on the orientation of the silicon substrate, were formed inside the silicon-dioxide-masked nanoholes at 630°C. Clear facets, which are the low-energy {011} planes, indicate single-crystalline nature of the growth. GaAs/InAs/GaAs structure...
In this paper, we will demonstrate a novel approach to incorporate Si and/or Ge nanostructures into crystalline rare earth oxides using molecular beam epitaxy (MBE) for nanoelectronic devices application. By efficiently exploiting the growth kinetics during MBE we succeeded in creating semiconductor nanostructures exhibiting various dimensions, ranging from three dimensionally confined quantum dots...
We have grown n+-BaSi2/p+-Si tunnel junctions with different BaSi2 template thicknesses on Si(111) by molecular beam epitaxy. Both the epitaxial growth and low resistance as small as 0.05 Ω·cm2 were achieved for a bias voltage of 0.1 V when the template layer thickness was 1 nm. The photoresponse spectra were measured at room temperature for a 360-nm-thick undoped BaSi2 film grown on the tunnel junction...
We describe a novel approach to grow Si nanostructures embedded into crystalline rare earth oxides using molecular beam epitaxy. By efficiently exploiting the growth kinetics during growth one could create nanostructures exhibiting various dimensions, ranging from three dimensionally confined quantum dots to the quantum wells, where the particles are confined in of the dimensions. The crystalline...
In this investigation, SiGe compounds allowed a variation of the extent and size of the initial elastic stress, to determine correlations between growth conditions and crystalline perfection of the heterostructures (HS). Some structures were grown by Molecular Beam Epitaxy (MBE) on Si(001) substrates at 605??C, and others on Ge(001) substrates at 440??C, with the growth rate ranging from 1.35 to 2...
Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 ??m CMOS technology. We present results for crystalline gadolinium oxides on silicon in the cubic bixbyite structure grown by solid source molecular beam epitaxy. On Si(100), crystalline Gd2O3 grows usually as (110)-oriented domains, with two orthogonal in-plane orientations...
This paper presents experimental work on studying the detailed structure and strain relaxation of nanometer thick Nd2O3 films epitaxially grown on Si(111) substrates using molecular beam epitaxy (MBE). Investigations by various diffraction methods demonstrate that the Nd2O3 layers exhibit a well-ordered cubic bixbyite structure with a single orientation, perfect crystallinity and a sharp interface...
Epitaxial growth of silicon on heavily boron-doped Si(111) surface was investigated. In our experiments, we found a new growth mode in the very initial stage for boron-coverage below 0.5 monolayer (ML) likely associated with defect-induced nucleation of Si islands. The initially stage of growth on boron-covered Si(111) could be interpreted by a quasi van der Waals like epitaxy, where Si adatoms catch...
Room temperature 1.6 mum p+-Si/beta-FeSi2/n+-Si double heterostructures light-emitting diodes is fabricated on Si(111) substrate using molecular-beam epitaxy. The electroluminescence intensity is improved by increasing the thickness of beta-FeSi2 active layer and by embedding the beta-FeSi2 at heavily-doped Si p-n junction, which is making it possible to evaluate the emission power and quantum efficiency...
Crystalline high-k oxides epitaxially grown on Si which allow further reduction of equivalent oxide thickness (EOT), are potential candidates for gate dielectrics in the 32 nm CMOS technology mode requiring EOT < 1 nm beyond 2013. Epitaxial growth of perovskite-type oxides on Si for gate dielectrics was demonstrated and high transistor mobility was achieved (McKee et al., 2001). Here we report...
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