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This paper will focus on the various and ubiquitous uses of silicon-germanium (SiGe) in high-performance silicon-based semiconductor technology. SiGe can now qualify as a "mature" technology - it is almost 20 years since the first SiGe HBT work. It is 10 years since the qualification of SiGe as a manufacturable silicon technology in a high-volume silicon fabricator
In summary, the authors have demonstrated controlled switching between left- and right- elliptically polarized modes in a VCSEL using a ferromagnetic semiconductor to align hole spins. The experiment proves that the concept of spin injection applies equally well for semiconductor lasers as it does for LEDs. Spin transport occurs across a distance of -0.25 mum for temperatures ranging from 80 to 105...
Strained-silicon technologies have been widely investigated to enhance the performance of CMOS devices (Thompson, et. al., 2005). In particular, strain induced by the use of a stressed SiNx capping layer is advantageous because of its process simplicity and its extendibility from bulk-Si to silicon-on-insulator (SOI) MOSFETs (Komoda, 2004, Pidin, 2004). In this paper, the effect of a tensile capping...
In this work, we report on vertically scaled, 100nm gate-length Al 0.31Ga0.69N/AlN/GaN HEMTs with a low sheet resistance of 260Omega/square, an fT of 125 GHz and an f max (Ug) of 174 GHz. Careful device design and unique process features also resulted in a high peak Gm,ext of 498 mS/mm, an Idss of 1.2A/mm, and a gate-to-drain breakdown of 30V
Current injection lasing operation of ZnTe based yellow-green light semiconductor laser diodes (LDs) with ZnCdTe active layer and MgZnSeTe cladding layers have been achieved, for the first time. The lasing characteristics were evaluated with a single pulse current injection mode at low temperature. The lowest threshold current density of the LD was 2.7 kA/cm2 at 100 K. The maximum lasing temperature...
In this paper, data retention loss phenomena after write/erase cycles and time in an embedded SONOS memory cell were investigated for the first time. By analyzing source junction leakage current, it was determined that the loss of holes in nitride also results in an increase in threshold voltage, a drop in ion, and a degradation of sub-threshold slope
The authors propose a new device design using the polarization properties of the III-nitrides system that eliminates the need for high doping concentrations and has the further benefit of potentially eliminating problematic p-type contacts. P-type material in the nitrides is plagued by high contact resistance and high sheet resistance. These problems could be eliminated by contacting n-type material...
The authors have investigated the resistance switching characteristics of non-stoichiometric ZrOx and STOx thin films for nonvolatile memory application. The non-stoichiometric ZrOx films were grown in a reactive sputtering method using Zr target and SrTiOx (STOx) films were deposited by pulsed laser deposition (PLD) method using a pure SrTiO3 target
The authors present here the characteristics of an electrically injected single defect (or larger) photonic crystal microcavity device with quantum dot active region that exhibits single-mode behaviour in the output spectra. The devices are mechanically robust and the design minimizes thermal instabilities
In order to achieve operation at terahertz frequency, electronic devices are required to reach the highest possible transit velocity, even if this velocity is limited to a short distance. The concept of ballistic electrons in compound semiconductors was initially reported using GaAs (Shur and Eastman, 1979). In this work, progress in initial research on GaN based ballistic electron acceleration negative-differential-conductivity...
For the past decade, most of vertical device applications of GaN were processed by either wafer bonding or direct epitaxy on SiC or GaN wafer. However, the former usually suffers from large strain between GaN and bonding wafer because the high temperature and high pressure bonding process, and the later is not cost effective because of using SiC or GaN substrate. In this work, a novel vertical structure...
In the present work, the authors describe PMC memory devices based on Ag-Ge-S electrolytes. These have excellent temperature stability and are compatible with most BEOL processing in CMOS integrated circuits
Top-down vs. bottom-up: It is common to differentiate between two ways of building a nanodevice: a top-down approach starting from something big and chisel out what is needed and a bottom-up approach starting from something small like atoms or molecules and assemble what is needed
Semiconducting (conjugated) polymers are of considerable importance as the active materials in electronic and optical devices, including polymer-based light emitting diodes (LEDs), photodetectors, photovoltaic cells, sensors, field effect transistors and lasers. Because these semiconducting (and metallic) polymers can be processed from solution, the field of "plastic electronics" is moving...
This paper discusses a possible way to achieve better FET performances for both channels as well as a determination mechanism of the channel type. We investigated perfluoropentace (C22F14) (PF-pentacene) for n-channel and pentacene (C22F14) for p-channel FETs. On the basis of the energy level consideration for both channel material and S/D metals, we show a systematic guideline for achieving a better...
In this paper, a "responsive drug delivery system", in which a sensor measures a marker in the patient's body and releases medication the patient requires at any given moment is developed. In this way, we can precisely control the drug concentration in patient's body to enhance drug efficiency and lessen side effects. In order to achieve responsive drug delivery, a reliable release device...
We have obtained good non-volatile memory device integrity of fast 100mus program and 1ms erase time at plusmn13V, large initial memory window of 4.5V, and extrapolated 10-year memory window of 3.8V or 2.4V at 25 or 85degC in the new IrO2-HfAlO-AlN-SiO2-Si MONOS device
In this report, we describe the fabrication and experimental demonstration of fanout in QCA. Fanout is important as it is necessary for complex digital logic circuits and is essential for generating compact designs, as multiple cells can be then driven by a single driver cell. Fanout in QCA is also a direct demonstration of power gain in QCA circuits. The device is realized using metal islands (as...
Nonvolatile memories with heterogeneous-stack floating gate of metal nanocrystals and silicon nitride (Si3N4) have been fabricated and characterized. The heterogeneous gate stacks showed superior characteristics in retention and low voltage write/erase over single metal nanocrystal memories and/or nitride memories (i.e., MONOS or SONOS). The metal nanocrystals in the stack made low voltage operation...
This paper reports on the dynamic behavior of power dissipation in a clocked QCA majority gate. A distributed clocking scheme is employed in the QCA array to form a "computation wave" which moves smoothly across the circuit. The quantum dynamical calculation is done with coherence vector formalism with dissipation incorporated so that we can see power flowing to the environment, and also...
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