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The following topics are dealt with: diodes; IGBT; GaN devices;SiC devices; superjunction devices; wide bandgap power devices; packaging; power MOSFET; reliability; LV power IC; HV power IC; gate drivers and digital isolators.
In many communications applications semiconductor devices operate in a pulsed mode, where rapid temperature transients are continuously experienced within the die. We proposed a novel junction-level cooling technology where a metallic phase change material (PCM) was embedded in close proximity to the active transistor channels without interfering with the device's electrical response. Here we present...
We report on small, low-ohmic RF MEMS switches with a circular membrane actuator design. A low temperature process is used to manufacture both the MEMS switch as well as its hermetic, thin-film package resulting in a very small footprint device. The hermetic seal of the package significantly increases the switch lifetime and reliability. The switches demonstrate good RF performance and high switching...
Today's semiconductor industry continues to deliver high performance and cost effective solution. Copper wire bonding is one of the hot topics on low cost alternative packaging materials. However, copper wire bonding is still not fully established and it requires significant engineering effort especially on the C65 low k, wafer with probed Al bond pads. A thin gold wire compared to copper wire will...
Trends in the packaging of semiconductors are towards miniaturization and high functionality. The package-on-package (PoP) with increasing demands is beneficial in cost and space saving. This study conducts the assembly of the PoP component through the stacking process. Samples are subject to thermal cycling test condition, 0°C to 100°C. The failure of samples is defined as when the measured resistance...
The equivalent circuit model for optical sensor with quantum dot quantum well hybrid structure is established to investigate the small signal characteristic further. The parasitical parameters are introduced to the equivalent circuit model of optical sensor to investigate the electrical reliability and the performance of optical detector. The 3D multi-chip module (3D-MCM) packaging models of FEA for...
Package is a key factor, and affects the reliability of LED. In this paper, the main failure modes and mechanisms that caused by poor package process were investigated through some failure analysis cases, and some improving methods to improve the LED's reliability are put forward.
A new air cavity package has been developed and qualified for packaging high power RF components. The package uses the standard outline of a conventional ceramic package. The ceramic dielectric is replaced with a novel high performance thermoplastic which is a modified liquid crystal polymer. The package manufacturing technology provides for a cost effective means of creating a package with multiple...
The blocking voltage rating of an IGBT module have reached up to 6.5 kV, however for true high power application such as traction drives, the current rating has to increase as well. This is mainly achieved by either improving the packing density of semiconductor chips per given module footprint and or improving the current density of the semiconductor chips used in the IGBT module. In this paper we...
When junction temperatures of the light emitting diode (LED) chips packaged inside LED lamps exceed their maximal limits, the optical extraction and the reliability/durability of the LED lamps will be jeopardized, therefore, thermal management is very important for high power LED street lamps. In this research, a design and optimization method of horizontally-located plate fin heat sink was presented...
The introduction of lead-free bumps into flip chip packages in combination with the incorporation of Cu / low-k or ultra low-k dielectric materials is making underfill development more challenging. The traditional concept of stiff and rigid underfills does not satisfy the new device reliability requirements. Rather, newer generation underfill materials need to balance the physical properties, such...
In this paper we will define reliability testing for organic thin film flexible photovoltaics. We will give examples of accelerated lifetime testing (ALT) protocols designed to quantify materials with respect to product specification and to meet customer needs. We will show the correlation between various standardized accelerated testing conditions and discuss progress in packaging. We find examples...
A new silicon transistor has been developed that enables the design of high power pulsed amplifiers through its unique device structure and reliable packaging methodology. The HVVFETtrade (High Voltage Vertical Field Effect Transistor) technology has been optimized for pulsed applications with an all gold wire scheme. The HVVFET has been characterized with over 10 billion pulses with no sign of wire...
The needs of ambient intelligence and miniaturization of electronics require extensive integration of semiconductor components such as MEMS and sensor packages. A MEMS/sensor package needs access to environment, which is a challenge for MEMS or sensor encapsulation. Film assisted molding (FAM) technology can meet the demand of the functional area opening in the encapsulation. FAM technology can fulfill...
This technical paper presents the ultra low loop height challenges faced in the development of miniaturized SOT-923 package. It is drawn from the package development experiences for Flat Lead packages of 0.8 mm × 0.6 mm × 0.4 mm (SOD-923) which was successfully developed and introduced commercially. This product is mainly used on hand-held applications where the size has become smaller. Therefore,...
Improvements of power module technologies are investigated in different life time tests. Failure causes like solder fatigue become more important and a limiting factor for lifetime in power cycling tests. Different failure modes of solder joints in relation to power cycling conditions are shown.
Temperature monitoring and management is emerging as an important tool for through-life cost optimization of high reliability power electronic systems. When combined with physics of failure based reliability analysis, such techniques can be employed to provide functions such as life consumption monitoring and prognostic maintenance scheduling. Requisite elements of such schemes are real-time electro-thermal...
We present an interconnect technology based on low-temperature and pressureless sintering of a nanoscale metal paste to achieve high-performance and high-temperature packaging of semiconductor devices. The nanoscale metal paste, consisting of nanoparticles of silver mixed in an organic binder/solvent vehicle, can be sintered at temperatures close to 275degC. Measurements on electrical and thermal...
Junction temperature typically determines the time to wear-out for a power amplifier, and thermal management affects many critical power amplifier design choices such as packaging, gate pitch, and wafer thickness. Pulsed waveforms create a junction temperature that varies as a function of time. Often the maximum temperature during the pulsed waveform is used to determine the failure rate for a pulsed...
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