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This paper reports that the unclamped inductive switching (UIS) withstanding capability of high voltage GaN-HEMTs depends on the gate voltage at off-state and the substrate connection. The relation between the UIS withstanding capability and the electrical potential at gate and substrate is discussed by the results of the UIS test for GaN-HEMTs with p-type gate structure. Conclusively, the mechanism...
One way to increase the breakdown voltage in heterojunction field-effect-transistors (HFETs) on silicon substrate is to introduce a transition (buffer) layer made of a sandwich of thin AlN/AlGaN layers between the silicon substrate and the GaN well. The effect of this transition layer is to average out and, in this way, to reduce the local mechanical stress that appears between the silicon substrate...
Between 5 and 10% of the world's electricity is wasted as dissipated heat in the power electronic circuits needed, for example, in computer power supplies, motor drives or the power inverters of photovoltaic systems. This paper describes how the unique properties of GaN enables a new generation of power transistors has the potential to reduce by at least an order of magnitude the cost, volume and...
This paper aims at discussing the possibility of using GaN power devices in automotive power electronics applications. The major issues with current silicon-based devices are highlighted in this paper. Furthermore, the paper also discusses the possible solutions offered by wide-band gap semiconductors, specifically Gallium-Nitride (GaN). The fundamental steps in designing GaN devices includes choosing...
AlGaN/GaN high electron mobility transistors (HEMTs) were grown on Si substrates by MOCVD. In the HEMT structure, the 1 μm GaN buffer layer was partially doped with Mg in an attempt to increase the resistivity and minimize the buffer leakage current. Afterwards, an AlN spacer layer was inserted between the AlGaN barrier layer and the GaN channel layer to effectively reduce impurity scattering and...
AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for power electronics applications. Despite the low cost of the Si substrate, the breakdown voltage (Vbk) of AlGaN/GaN HEMTs grown on Si (less than 600 V for 2 μm total nitride epilayer) is much lower than that grown on SiC (1.9 kV for 2 μm total epi-layer). Although several approaches have...
In this paper, GaN-based HFET devices on 4-inch Si substrates were fabricated, and the device characteristics were examined. As a result, the maximum drain current was estimated to be over 115 A using MIS-structures. A trade-off between the specific on-resistance (RonA) and the breakdown voltage (Vb) was improved using carbon doped buffer layers, resulting in obtaining RonA=3D 5.9 mΩcm2 and Vb=3D...
We describe the fabrication and characteristics of high voltage enhancement mode SiN/AlGaN/GaN/AlGaN double heterostructure FET devices. The Si3N4 not only acts as a passivation layer but is crucial in the device concept as it acts as an electron donating layer (1). By selective removal under the gate of the in-situ SiN, we realize e-mode operation with a very narrow threshold voltage distribution...
GaN is promising for high-power, high-temperature devices due to some of its large bandgap, high critical electric field, and high saturation velocity compared with Si and SiC. The MOSFET structure can be operated at a positive threshold voltage in the normally-off mode, which is preferable for power transistors in terms of fail-safe operation. In order to realize MOSFET operation, low resistance...
We have designed a high breakdown yielding AlGaN/GaN HEMTs on 4 inch silicon wafer without using a field plate or increasing the gate-drain length (Lgd). Our approach is based on improving the total thickness (Tgd) of the AlGaN/GaN epi-layers as high as 9 μm which improves the quality of i-GaN. Growing i-GaN on thick buffer reduces the dislocation density, increases the resistance between the surface...
We report on the demonstration of enhancement-mode n-channel GaN-based hybrid MOS-HFETs realized on AlGaN/GaN heterostructure on silicon substrates with a large drain current operation. The GaN-based hybrid MOS HFETs realized the threshold voltage of 2.8 V, the maximum drain current of over 70 A with the channel width of 340 mm. This is the best value for an enhancement-mode GaN-based FET. The specific...
In this paper, GaN-based MIS-HFET devices on 4-inch Si substrates were fabricated, and the device characteristics were examined. As a result, the breakdown voltage was improved to be over 2.45 kV using high-resistive carbon doped buffer layers with a larger thickness of over 7.3 mum. The maximum drain current was estimated to be over 115 A using MIS-structures. A trade-off between the specific on-resistance...
The normally-off AlGaN/GaN HFETs on Si substrate were fabricated. To realize normally-off characteristic, recess was formed under the gate electrode and NiOx was formed as a gate electrode. As a result, the fabricated AlGaN/GaN HFET with a gate width of 157 mm exhibited a threshold voltage of +0.8 V, a breakdown voltage of more than 800 V, an on-resistance of 72 mOmega, and a maximum drain current...
GaN based devices offer many perspectives for power conversion applications. To demonstrate the capabilities of III-nitride components, we studied the switching behavior of a GaN DHFET device. We show that the combination of a low input capacitance, a low on-resistance and a high breakdown voltage is the key advantage for GaN components. Moreover the possibility to grow GaN on Si substrates allows...
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