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An op-ampless second-order compensated bandgap reference with low temperature coefficient is proposed in this paper. The bandgap is second-order curvature-compensated by the temperature coefficient of the threshold voltage of a MOSFET. Simulated by Spectre, the output reference voltage is 1.102V with a 2.7ppm temperature coefficient from −40 °C to 160 °C and a −60dB PSRR at low frequency. The current...
Almost all electronic circuits require a reference, be it voltage, current, or time. A well-designed reference is expected to provide a “stable” point that will be independent of the potential variations in its operating conditions. While there has been decades of extensive amount of creative work in the world of reference design, with the emergence of new applications, reference designers are now...
This paper presents a high-precision, low temperature coefficient (TC) CMOS bandgap reference for high-performance multi-channel ADC working under wide temperature range. A piecewise curvature compensation technique is proposed to extend its operating temperature range and keep its low temperature coefficient. A ß-compensation technique is used to cancel the PTAT and non-PTAT spread of the output...
In this paper a microwatt low voltage bandgap reference suitable for the bio-medical application. The Present technique relies on the principle of generating CTAT and PTAT without using any (Bipolar Junction Transistor) BJT and adding them with a proper scaling factor for minimal temperature sensitive reference voltage. Beta multiplier reference circuit has been explored to generate CTAT and PTAT...
In this paper, a transimpedance amplifier based curvature compensated bandgap reference (BGR) is proposed. Detailed analysis of the proposed structure is presented. Functionality of proposed BGR is verified through SPICE simulations using 180nm CMOS technology. The proposed BGR gives a reference voltage of 505 mV at room temperature with a maximum change of about 6.9 mV from the room temperature value...
This paper presents a novel functional block level abstraction for generating a stable reference voltage over a wide temperature range. The proposed method uses multiple high temperature coefficient (TC) reference sources to generates a low TC voltage. The proposed approach is demonstrated using four BiCMOS voltage reference cells, with 26.6ppm/C TC as an example to achieve 1.24ppm/C TC over a temperature...
A Bandgap Voltage Reference (BGR) circuit technique for lower voltage supply operation is presented. It eliminates the need of BGR core and resistors by integrating a two-stage cascode operational amplifier (op-amp) biased with a start-up circuitry with all-MOSFET transistors. The circuit is designed in 0.13μm CMOS process technology, produced a 179mV reference voltage at 27°C with 0.4V supply voltage...
A new sub-1-ppm/°C curvature-compensated bandgap voltage reference (BGR) is presented in this paper. The Complementary to Absolute Temperature (CTAT) voltage component of a forward biased BJT is first well balanced with a Proportional to Absolute Temperature (PTAT) voltage, leaving only a high order logarithmic error with the form of TlnT. This residual non-linear error is corrected by a difference...
This paper proposes a current-mode bandgap reference which employs a novel “coarse” voltage replication to offset the 2nd-order curvature due to base-emitter voltage of the BJT. The coarse replication is based on a process insensitive transcendental equation which regulates the independent CTAT current. The bandgap reference which will be implemented in 0.35µm CMOS process has a low operating current...
To improve the performance of typical first-order bandgap references, a high precision bandgap voltage reference with second-order curvature correction is proposed in this paper. Utilizing a temperature independent current (has nothing to do with the temperature of first order) and a proportional to absolute temperature (PTAT) current, a proportional to the square of temperature (PTAT2) current can...
A high-order temperature compensated current-mode bandgap reference is proposed for automotive applications. The proposed circuit uses one BGR core to produce concave upward and concave downward curvatures which are combined to be compensated and have highly precise current. It also uses two different types of resistors to compensate temperature coefficients in resistors. The circuit is designed specifically...
An ultra-low power and offset-insensitive CMOS voltage reference circuit is presented. Due to the novel structure of employing subthreshold MOS transistors, the proposed circuit can suppress the DC offset effects of the internal amplifier. Design considerations in optimizing the power and area consumptions, and improving the power supply ripple rejection (PSRR) are presented. The voltage reference...
This paper presents a new voltage reference circuit (VRC) designed using operational transresistance amplifier (OTRA). The OTRA being a current input voltage output analog block, uses shunt-shunt feedback thereby enables the proposed voltage reference to operate at lower supply voltage. The proposed structure generates an output reference voltage of 651 mV. The variation of the output voltage from...
These After analyzing the basic principle of bandgap reference(BGR), a differential pair of npn transistors with an emitter area ratio are used to produce a current which is proportional to absolute temperature (PTAT) in this paper. A relatively simple current compensation methods is illustrated to optimize the temperature characteristic of the BGR. This BGR has been verified in 0. 8um BiCMOS process...
A low power cross-coupled bandgap voltage reference is proposed in this paper. Based on the suggested structure, a 9.8 ppm/°C temperature coefficient bandgap voltage reference across −50°C to 150°C temperature range with 1.8-V supply voltage is achieved. For the help of the proposed cross coupled structure bandgap voltage reference, start-up circuit can be waived from which can save both area and...
CdO-Ga2O3 alloy films (Cd1-xGaxO1+δ) over the whole composition range (x=0 to 1) were synthesized by room temperature radio frequency magnetron sputtering. We found that the intrinsic band gap of these alloys can be tuned in a wide range from 2.2 to 4.8 eV. As the Ga content increases to x>0.3 the alloy becomes entirely amorphous and the resistivity increases from 10−3 to 10−1 ohm-cm while the...
This article designed a bandgap voltage reference source with a low temperature drift, high power supply rejection ratio for the TCXO chips , and design the sensitive reaction of thermal protection circuit is used to protect TCXO chips. The structure of self-biased currentsource and differential operational amplifier is used in thebandgap reference, And the over temperature protectioncircuit controlled...
This paper presents a resistorless bandgap reference with minimized quiescent current, designed in a CMOS 0.35um/5V technology. The circuit relies on strong inversion operation, and the “inverse function”, achieving first order temperature compensation. Simulation results indicate 20ppm/deg.C between −40deg.C to 125deg.C, 6uA quiescent current and 2.8V minimum supply voltage.
This paper proposes a novel kind of bandgap reference (BGR) with high precision and high power supply rejection ratio (PSRR) by using optimized differential common-gate structure and a cascode amplifier. The circuit uses the standard 0.18 μm CMOS process. The simulation results indicate that the temperature range is −20°C to 80°C and the temperature coefficient (TC) less than 27 ppm/°C is achieved...
A low power Bandgap Voltage Reference (BGR) is designed to supply a voltage reference for a low voltage Low-Dropout Regulator (LDO). This bandgap design consists of a bandgap core circuit, an output stage and a start-up circuit. The output of the bandgap adopted sub-1V voltage reference through the output stage circuit. The bandgap is simulated using 0.13 μm CMOS process. This BGR circuit provides...
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