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TSV (Through Silicon Via) is one of advanced semiconductor technologies for miniaturization and improved performance at the system integrated circuits. Recently, more complex module should be required this process to be integrated. There specific module for a mobile wireless communication, called TSV (Through Silicon Via) module is now adapted and imbedded with individual passive devices. In this...
Mechanically Flexible Interconnects (MFIs) with a pitch of 50 µm and a standoff height of 65 µm are reported. Mechanical characterization of the MFIs using indentation demonstrates elastic deformation and the feasibility of temporary interconnection. The integration of MFIs and TSVs is also reported along with electrical testing for interposer and 3D IC applications.
In this paper, investigation of Parylene-HT for using as insulation/liner in through-silicon-via (TSV) is presented. Bottom-up copper filled TSVs with 1 µm Parylene-HT insulator with aspect ratios (ARs) up to 10, are demonstrated on a 100 µm-thick Si wafer through via etching, parylene vapor deposition, and copper electroplating processes. Cross sectional inspections on the fabricated TSVs confirm...
In this study, Parylene-HT, the newest commercially available parylene with the lowest dielectric constant and highest temperature tolerance within all the series, was investigated as insulation/liner in the application of through-silicon-via (TSV). Bottom-up copper filled TSV with 1 µm Parylene-HT insulator was realized on a 100 µm-thick Si wafer through via etching, parylene vapor deposition, and...
A Silicon interposer with through silicon via (TSV) has become important key components of 3D integration. It is used as an intermediate carrier and a wiring device for IC components like logics, memories, sensors, and so on. Due to wiring with custom design on front and back side, a TSV interposer enables to adapt the fine pitch IO terminals of the mounted ICs to the IO geometries of the package...
In this paper, the electrical characteristics, such as CV and IV, of TSV embedded in grounded Si are presented. The aim is to understand the interaction between TSV and silicon substrate. Process developments of TSV with diameter of 5μm and height of 5-10μm are discussed in terms of DRIE Si via etching, isolation deposition, Cu ECP and Cu CMP.
Three dimensional through-silicon via (3D TSV) technology emerges due to the requirement of high performance, low cost and small form factor in the three dimensional packaging technology. The typical TSV structure is a thin silicon wafer drilled with through hole, the inside wall of the hole is plated with dielectric SiO2 and diffusion barrier such as Ta, and then the hole is filled by Cu or W as...
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