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Faced with the challenges of increasing operational frequencies and switching rates of modern electronics devices used in electrical systems, there is an extensive need for high frequency models (up to a few gigahertz) for electrical components like bandpass filters, couplers and power distributors. This paper presents the application of partial element equivalent circuit (PEEC) theory for the creation...
High-voltage MOSFETs enable wide bias-range applications realized only by optimizing the device structure. We have developed the compact model HiSIM_HV 2.0.0, based on the potential distribution in the device, which is useful for both device and circuit optimizations. By considering two device-structure dependent potentials, the internal node potential within the high resistive drift region and the...
In this paper we introduce a new numerical method to solve drift-diffusion equations with quantum correction. Simulation results show the ability of the new method to predict quantum tunneling from potential barrier and quantum repulsion. This numerical method has the higher accuracy in comparison with the other numerical method in the same number of iteration.
It is known that the electron tunneling from the valence band (EVB) is enhanced for SOI-MOSFETs with low Vds bias. We have modeled this phenomenon based on the surface-potential description. Our model considers the hole storage, which changes the potential distribution in the substrate. With the developed model it is demonstrated that the EVB effect can be predicted for any measurements accurately...
We report the potential-based SOI-MOSFET model HiSIM-SOI, which solves the three surface potentials of the SOI-device accurately without sacrificing simulation time. The model implements the bias dependent dynamic depletion behavior, shifting between partially-depleted (PD) and fully-depleted (FD) conditions smoothly. It is also demonstrated that the floating-body effect can be accurately captured...
This paper presents an analytical modeling of ballistic and quasi-ballistic transport, implemented in Verilog-A environment and used for circuit simulation. Our model is based on the Lundstrompsilas approach and uses an expression of the backscattering coefficient given by the flux method. The model takes also into account short channel effects and tales into account the effects of different scattering...
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