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Metal gate granularity (MGG)-induced threshold voltage variability is the dominant source of variability in FinFETs. The analytical model for MGG-based variability is essential to study its circuit impact. In this paper, we present a novel electrostatics and percolation theory-based analytical model to estimate MGG-induced threshold voltage (VT variability. The model is capable of analyzing realistic...
As short channel effect (SCE) and subthreshold leakage is demonstrated to be controlled effectively from conventional planar MOSFETs to the FinFET, we used a three-dimensional simulation of nFinFET structure to analysis fin width effect on the FinFET performance from perspectives of both on-state and off-state. In this study, the major leakage path of FinFET with varied Wfin takes place at middle...
In this paper we present the 3D trapezoidal structure for analyzing FinFET MOSFETs using three different mesh regions, one at the top and two in the sidewalls of the fin, which allows the consideration of different carrier mobility at each region due to crystalline orientation and technological processing. A procedure for the extraction of the mobility parameters in each region is developed. Validation...
A fully explicit physics-based model for ultrashort undoped (or lightly doped) FinFETs is proposed. In particular, a new physical approach to account for short-channel effects is presented as an extension of the long channel model. The modeling of small geometry effects relies on the accurate description of the potential profile along the channel and in particular on the position of the minimum potential...
Recently, the industry has focused a great deal on the use of non-planar multi-gate device structures. Many drain current models are available for undoped thin silicon channel double-gate (DG) silicon-on-insulator (SOI) MOSFET, but these models do not take charge coupling effect into account leading to an error of more than 20 percent for silicon channel thicknesses below 30 nm. Hence, we present...
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