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The proposed MEMS-technology viscosity sensor solves two major drawbacks associated with current state of the art MEMS viscosity sensors, such as: (1) Functional complexity and integration of external components for actuation and subsequent data acquisition; (2) Fabrication incompatibilities with CMOS processes. The proposed solution is based on thermally induced actuation, subsequent vibrations of...
This paper presents a high frequency silicon resonator design possessing a quadratic temperature coefficient of frequency (TCF) profile with high-temperature turnover point. The design takes the advantages of a square Lamé mode and extends it to a distributed arrangement, to allow efficient transduction while scaling up the frequency. A Distributed Lamé mode resonator (DLR) with frequency exceeding...
In this work, we demonstrate both high-frequency (1.12 MHz) MEMS tuning fork resonators and lower frequency (39kHz) MEMS test devices capable of withstanding large magnitude inertial shocks. These devices reliably continue to function after the application of repeated inertial shocks in excess of 20,000g. The device performance, and the robust, pure silicon encapsulated environment are both preserved...
We investigated the effect of short beam length and gap distance between short beams on the resonance frequencies in Fishbone-shaped MEMS resonator. To do so, we fabricated three different kinds of Fishbone-shaped MEMS resonators, and measured their resonance frequencies. Moreover, we investigated the resonance frequencies by the simulation, which were compared with measurement results and they were...
Two kinds of new silicon actuators, cantilever and twisted-beam, based on pn diode actuation principle are presented. The space gap that is absolutely needed in conventional electrostatic MEMS actuators is replaced by a depletion layer in reversely-biased pn diode. The strong electric field generated in the depletion layer forces a silicon microstructure to vibrate. The microstructure causes a large...
We report quartz level temperature stability of piezoelectrically driven silicon MEMS resonators. Frequency stability of better than ±10 ppm is measured for 23 MHz extensional mode resonators over a temperature range of T = −40 … + 85°C. The temperature compensation mechanism is entirely passive, relying on the tailored elastic properties of heavily doped silicon with a doping level of n > 1020...
This paper gives a detail description of a silicon vibration beam accelerometer which was fabricated by SOI technology and encapsulated in a wafer level vacuum package. The wafer level package gives advantage of small size and low cost, but also produce additional residual stresses that increased the temperature coefficient of the vibration beams. To solve this problem, the sensing structure was redesigned...
In this work, an oxide-refill process is used to null the first-order temperature coefficient of frequency (TCF) of silicon MEMS resonators and to achieve high thermal resistance isolation structures. The technology enables fabrication of a low-power ovenized micro-platform on which multiple MEMS devices can be integrated. The intrinsic frequency-temperature characteristic of two resonators is utilized...
This paper reports the first results that correlate nonlinear Duffing behavior and the temperature coefficient of frequency (TCf) in single-crystal-silicon (SCS) micromechanical resonators vibrating in lateral shear-dominant bulk modes, i.e. face shear (FS) and Lamé modes. Based on the anisotropic material property of SCS, we have derived a model to capture the nonlinear responses and the TCf for...
MEMS technology opens up and develops a bran-new technology. MEMS technology is applied in many fields and is developing into kinds of huge industries. The silicon piezoresistive pressure sensor and resonance beam silicon pressure sensor are key branches of MEMS and are analyzed and discussed in detail in this paper. This paper provides relative references and basics for scientific research of silicon...
A comparative study of computation models for predicting the vibration modes of some MEMS structures of cantilever type — as suspension arms of the inertial mass of a bulk-micromachined silicon accelerometer, reported to the experimentally measured values of resonance (natural) frequencies, is presented in this paper. The most appropriate values of silicon Young's modulus depending on the crystal...
Aluminum nitride (AlN) is a promising material for harsh environment sensing applications due to its piezoelectric effect and mechanical stability at high temperatures. In this work, AlN double-ended tuning forks (DETF) are presented as a transduction element to measure mechanical loads by observing the resonance frequency shift. The fabrication process of the MEMS devices including the bonding step...
This paper demonstrates a dual-mode (DM) oscillator which simultaneously excites the fundamental and third-order modes of a micromachined, piezo-on-silicon bulk acoustic wave (BAW) resonator for real-time self-temperature measurement. By concurrently measuring the temperature coefficient of frequency (TCF) at 30 MHz (f1) and 87 MHz (f3), a beat frequency (fb) with TCF of 162 ppm/°C is extracted. Phase...
A successful approach to drastically reduce or even completely eliminate friction and wear in scanning force microscopy is the use of electrostatic modulation of the normal force acting on the tip-sample contact. In this paper we have devised, fabricated and experimentally characterized a novel electrostatically actuated AFM probe. The probe consists of a flexible cantilever that has an electrostatic...
MEMS Lamb wave ultrasonic devices have been shown to be extremely useful for applications of sensor, actuator, resonator, and so on. This paper presents the design and fabrication of Lamb wave microdevice based on ZnO piezoelectric film. The Lamb waves were respectively launched and received by both Al interdigital transducers deposited on ZnO/Al/LTO/Si3N4/Si thin piezoelectric composite plate. The...
This paper reports on an SOI-based 20 MHz MEMS torsional resonator, wafer-level packaged using SiGe thin film and hermetically sealed using Al sputtering at 1Pa. The packaged resonators display a high quality factor (220,000) and a low motional resistance (12 k Ω) for low DC bias (1 V). The quality factor remains above 100,000 and the temperature coefficient of frequency (TCf) was measured to be -25ppm/°C...
The resonance frequency of a MEMS resonator was adjusted using CNT wire synthesis on the side of the resonator. The resonance frequency tuning method was examined by a simple MEMS cantilever model in this report. The simple cantilever was made using MEMS processes and main material of the model was low stress silicon nitride film. The resonance frequency of the MEMS cantilever was measured with laser...
We report a new family of ultra-high Q silicon MEMS tuning fork gyroscopes demonstrating angle rate and, for the first time, rate integrating (whole angle) operation. The novel mechanical architecture eliminates low frequency in-phase modes and maximizes the Q-factors. A vacuum packaged SOI dual mass gyroscope with a 1.7 kHz operational frequency demonstrated drive- and sense- mode Q-factors of 0...
Coplanar waveguides on silicon substrate were simulated. Using MEMS (micro-electro-mechanical system) technology, the V-shaped and W-shaped groove coplanar waveguides were implemented on silicon substrate, and its characteristic impedance was 30Ω, 50Ω, 75Ω and 100Ω respectively. In addition, the characteristic impedance of coplanar waveguide (CPW) was analyzed, and the conclusion was used to guide...
A low cost & feasible system on package solution on the basis of BCB and silicon wafer (10 Ohm·mm)-Si-Based 3D MMCM package solution is presented in this paper. What is more, a standard Si-Based MEMS process is employed to achieve package and revision of a GaAs-Based Monolithic Amplifier circuit. The measured results show that input return loss is less than 20 dB; moreover, small signal gain is...
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