The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We fabricated ferroelectric (K,Na)NbO3 (KNN) capacitors on Pt(111) or Pt(100) bottom electrodes with different substrate temperature by pulsed laser deposition. The annealing effect in O2 was also investigated. KNN film on Pt(100) substrate exhibited crystal grain clearly than that on Pt(111). The 2Pr and 2Vc, measured by ferroelectric tester, of Pt/KNN/Pt(111) for 400°C and 600°C were 4.28 and 4...
Silicon deep trench capacitors represent a promising alternative to surface-mounted capacitors, which are typically used in high power applications. Using these devices, modules with significantly lower parasitic inductances as well as a lower thermal impedance can be realized. It is demonstrated that the high aspect ratio trenches enlarge the surface area of the substrate, which yields an increase...
Interface state density (Dit) at SiO2/4H-SiC interfaces is investigated using capacitance-voltage (C-V) characterization. Two different measurement methods for Dit determination (both C-V at different temperatures in the range of 80–300K and high frequency (HF) vs quasi static (QS) characteristics) have been used. A significant reduction of Dit is observed, almost one order of magnitude, after a post...
The ferroelectric behavior of capacitors based on hafnium oxide dielectrics is reported. Thin films of 7–30 nm thickness were found to exhibit ferroelectric polarization-voltage hysteresis loops when integrated into TiN-based metal-insulator-metal capacitors. A remanent polarization up to 25 µC/cm2 and a coercive field of about 1 MV/cm was observed when Si:HfO2 was used as a ferroelectric material...
MIM capacitors with MOCVD-grown RuO2 bottom electrode, ALD-grown TiO2 rutile dielectric and RuO2 and Pt top electrodes were prepared and characterised by the means of C-V and J-V measurements. Dielectric constants were in the range of 140, which correspond to EOT of 0.5 nm and leakage current density as low as 1.5*10-6 A/cm2 was achieved. Strong influence of TiO2 stoichiometry on the leakage currents...
Since the very beginning of the flash memory era, the market has been dominated by the floating gate technology. However, as floating gate flash continues along a very steep scaling path, more and more barriers start to appear, limiting further scaling possibilities of the technology. At the same time, other concepts are preparing to take over. This paper concentrates on the prospect of high-k materials...
We propose a new test-element-group (TEG) in order to study anomalous stress-induced leakage current (SILC) of tunnel oxide, which is a problem for flash memory reliability. Using this TEG, gate current through the tunnel oxide in the order of 10-16 A can be measured for about 1,000,000 transistors within 4 minutes. The behavior of anomalous SILC when Fowler-Nordheim (FN) electron tunneling stress...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.