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The sensitivity of single-event effects (SEEs) in nanoscale CMOS for body-biasing circuits has been investigated. For PMOS hits, it is found that forward-biasing the body for high-speed applications can suppress the SET pulses greatly. Reverse-biasing the body for low-power applications, however, does not reduce the SEE vulnerability compared with operation when the body grounded. The body-biasing...
Within the framework of Keldysh impact ionization model the calculation of effective threshold energy for silicon MOSFET with 100 nm channel length by means of ensemble Monte-Carlo simulation is performed. The possibility of impact ionization rate treatment with one-parameter Keldysh model in pre-breakdown and breakdown transistor operation mode using calculated effective threshold energy value is...
Proposed is a fitting accuracy metric suitable for compact model qualification in all MOSFET operation regions. Fitting accuracy is quantified with a logarithmic deviation of simulated characteristics (such as current) from their measurement counterparts, normalized with the logarithmic deviation amplitude estimated with process-skewed parameters (corner model). The use of this new metric successfully...
ULTRA-SOI is a new generation of the channel-potential-based non-charge-sheet model for the dynamic depletion (DD) Silicon-On-Insulator (SOI) MOSFET, developed by TSRC group in EECS department of Peking University with many year efforts. The model is formulated with a fully physical derivation from the Poisson's equation to solve the potential along the vertical direction of the silicon film. The...
This paper presents a new and more accurate potential based model for bulk MOSFET compared to the traditional charge-sheet surface potential model. The channel potential of the bulk MOSFET is obtained by solving Poisson equation and an accurate current expression is obtained base on it. Taking Pao-Sah model as a standard, the relative errors of the charge-sheet model may be as large as 4% in the saturation...
Statistical variability is a major challenge for CMOS scaling and integration. In order to achieve variability aware design, it's critical important to reliably transfer device characteristics statistical variability information into compact models. A PCA based statistical compact modeling strategy is benchmarked against 'atomistic' device simulation and direct statistical parameter extraction strategy...
In this paper, parameter extraction algorithms are designed from the BSIM3v3 MOSFET model equations. The solution codes for the equations are written by MATLAB. The algorithms are designed to give results from only devices characteristics data. BSIM MOSFET model parameters are extracted by these algorithms. The SPICE simulations are performed using extracted parameters also. Simulation results have...
This paper presents a threshold voltage model of pocket implanted sub-100 nm n-MOSFETs incorporating the drain and substrate bias effects using two linear pocket profiles. Two linear equations are used to simulate the pocket profiles along the channel at the surface from the source and drain edges towards the center of the n-MOSFET. Then the effective doping concentration is derived and is used in...
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