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A wideband balanced active frequency doubler at Dband (110–170 GHz) and a frequency tripler at G-band (140–220 GHz) is presented. The circuits are implemented in a 250nm InP DHBT technology with ft/fmax 350/600 GHz respectively. The experimental results of the frequency doubler exhibit an output power of 4.2 dBm with 3-dB output bandwidth from 120 to 158 GHz corresponding to 27.3 % relative bandwidth...
This paper presents a design approach for a broadband and high efficiency harmonic-tuned power amplifier (PA) based on a low-pass filtering (LPF) matching network (MN). The MN is composed of quasi-lumped open stubs (λg/8<l< λg/4). Compared with widely used conventional Chebyshev LPF matching networks, the proposed output matching network provides a good approximation of desired lumped elements...
A 30-GHz band power amplifier (PA) IC is designed, fabricated and fully tested in 120-nm SiGe HBT process. The impedances of the output matching network are optimized at both the fundamental and second harmonic for a high power added efficiency (PAE). At a supply voltage of 1.4 V, the PA IC has exhibited a measured output P1dB of 10.8 dBm, a peak PAE of 32.4%, and a small-signal gain of 9.1 dB at...
This paper shows practical output load impedance sensitivity of a 10 W GaN HEMT device depending on a gate bias. In order to determine how much the output impedance changes for different biasing points, Load Pull measurement is performed for different biasing points from deep class-AB to class-A. It has been found that load impedances for simultaneously high output power as well as high power added...
A millimeter-wave frequency quadrupler implemented in BiCMOS 55 nm process from STMicroelectronics for in situ load-pull D band characterization is proposed. The circuit consists on cascaded doublers with intermediate power amplifiers to increase the output power. Two high-pass filters allow the rejection of the first and 2nd harmonics to obtain pure 4th harmonic output frequency. The measured peak...
Traditional methods and new method for measurement of low non-linearity of electronic components and circuits are described in this paper. Maintaining a linearity of components and circuits that are on principle linear is a measure of their quality. Passive intermodulation distortion (PIM) and non-linearity itself arises as a result of faults in production or component degradation and limits their...
For solving the problem that a flux-gate sensor excited by the square wave would be disturbed by harmonics, a fluxgate excitation system with a sine wave excitation is presented. The system overall scheme, also with the detailed signal generator design, signal conditioning circuit, and the power amplifier circuit, are all given in this paper. At the same time, the key parameters of the excitation...
This paper presents a D-band frequency quadrupler from 124GHz to 158GHz. The design leverages a folded-transformer based passive network to generate high-quality and broadband differential quadrature driving signals with low loss for the input tone centered at 35GHz. Then, the four-phase signals drive the 1st-stage frequency doublers to yield fully differential signals at the 2nd harmonic frequency...
In this paper a broadband high-efficiency Class-BJ GaN HEMT-PA for wireless communication applications is realized. Influences of packaging and bond wires on the PA performance are investigated in order to demonstrate and use accurate package models. A novel optimization of bond wires for packaged powerbars is therefore performed and, subsequently a fully characterized PA is effectively designed....
In this paper a broadband high-efficiency Class-BJ GaN HEMT-PA for wireless communication applications is realized. Influences of packaging and bond wires on the PA performance are investigated in order to demonstrate and use accurate package models. A novel optimization of bond wires for packaged powerbars is therefore performed and, subsequently a fully characterized PA is effectively designed....
This article presents the design approach, realization and measurement results of a highly efficient double octave wideband power amplifier using a GaN-HEMT bare-die. An iterative approach to obtain the optimum source and load impedances is described. Multiple harmonics are analyzed using harmonic load-pull simulation and a reliable large-signal device model. The design was realized exploiting a transition...
This paper proposes a novel and easily-implemented method for Class-J power amplifiers. The 2nd harmonic impedance matching networking is designed and realized by using microstrip stub networks. To prove the concept, a PA prototype operating at the frequency range from 1.7 GHz to 2.24 GHz is implemented. In the field experimental results, it achieves the drain efficiency of above 62% at a fractional...
This paper presents a GaN HEMT based harmonically tuned broadband power amplifier. The amplifier uses the CGH40120F GaN device from Cree Inc. and delivers 100 W output power across the bandwidth 1.55–2.25 GHz. The minimum power added efficiency (PAE) over the bandwidth is higher than 60 % with maximum values up to 70 %, respectively. Measurements using digital modulated signals were performed, too...
A K-band high efficiency high output power frequency doubler in a 0.5-µm GaAs enhancement- and depletion-mode pseudomorphic high electron-mobility transistor (E/D-mode PHEMT) technology is presented in this paper. The doubler employs a configuration of a common-gate (CG) field effect transistor (FET) /common-source (CS) FET pair to enhance the second harmonic efficiently. Between 21 and 28 GHz, this...
An active frequency-tripler MMIC achieving an output frequency of 315 GHz is presented. Without the use of post-amplification the frequency-tripler generates an average output power of −10.1 dBm in the output frequency range from 285 to 315 GHz. At 303 GHz the measured output power is −9.3 dBm with an input power of 10 dBm. The comparison to the simulated results shows the quality of the underlying...
This paper describes a new methodology of wideband and highly efficient design with packaged transistors using behavioral model in CAD software. The Multi-Harmonic Volterra (MHV) model of a 10W GaN transistor has been extracted from Time domain Load-Pull measurements, and has been implemented into CAD software for the design procedure. The designed power amplifier exhibits, in measurement, a drain...
In this paper we evaluate the generation of a multi-tone set for characterizing the behavior of nonlinear radio frequency (RF) modules in its out-of-band when harmonic sampling is used as digitizer. The purpose is to provide the reader with a tool to select proper frequencies and record length for a given application and test-bed. The method is based on simulations and the use of Sidon sequences....
In this paper a multiply by five class-E based multiplier circuit with a 32 MHz input signal is described and measurement results, performed on a prototype board, are presented and compared with a classical high frequency simulation tool. Here we don't propose a novel project methodology, but illustrate all the simulation steps and measurements results for an HF class E times five frequency multipliers...
This paper reports the design and measurement of a GaN power amplifier whose output loads are optimised at fundamental and 2nd harmonic over a wide bandwidth (20%) in S-Band to reach maximum power added efficiency (PAE). The design methodology is described in the paper. Two power amplifiers have been built. The first one is optimized at fundamental and 2nd harmonic while the other one is only optimised...
This paper presents a novel tunable matching network scheme suitable for the design of electronically reconfigurable microwave circuits. These circuits enable the development of high performance and frequency agile RF front-end modules for multi-band and multi-carrier radios in cognitive wireless networks. In this paper, the tunable matching network includes a harmonic tuning feature essential to...
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