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An investigation of threshold voltage instability in gate recessed normally-off GaN metal insulator semiconductor high electron mobility transistors (MIS-HEMTs) was performed by analyzing the interface states, border traps, and conduction band offset. To reduce the threshold voltage instability with improved dielectric-GaN interface, plasma enhanced atomic layer deposition (PEALD) technique was successfully...
Accurate physical modeling has been developed to describe the current gain of silicon carbide (SiC) power bipolar junction transistors (BJTs), and the results have been compared with measurements. Interface traps between SiC and SiO2 have been used to model the surface recombination by changing the trap profile, capture cross section, and concentration. The best agreement with measurement is obtained...
The SiO2/SiC interface limits optimum SiC MOSFET performance due to a high density of interface states (D????), which is reduced in devices that receive post-oxidation NO-annealing. Also, the interface state density in the 6H polytype is generally lower, approaching that of the NO treated 4H. In this work, interface states are investigated in both as-oxidized (AO) and NO-annealed (NO) MOS capacitors...
Electron traps in HfO2 have been investigated by measuring thermally stimulated current (TSC). Two different interface regions have been identified where captured electrons interact with energy band states. The two domains are separated by and close to the ldquointerlayerrdquo of SiOx commonly present in high-k/silicon stacks. On the inner side, between SiOx and silicon, we find an irregular silicon...
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