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Silicon based pressure sensors often take advantage of piezo-resistive gages which are normally embedded by multiple silicon oxide and silicon nitride layers where gold lines form a Wheatstone bridge. As a result of manufacturing - stepwise deposition of multiple layers - significant layer residual stresses occur in the GPa range in tension and compression. But also anodic bonding of the silicon MEMS...
In this paper, influences of the initial stress on the surface micromachining silicon nitride pressure sensor was analyzed and discussed. The residual stress in the diaphragm is a major issue that makes significant difference on the performance of surface micro machined pressure sensors, such as warpage, micro-cracking, delamination, debonding, and nonuniform stress profile of the membrane. The pressure...
In this paper, a Micro-Infrared Photo-elasticity (MIPE) system was set up and applied to evaluate the residual stress of Si chip around TSV. The MIPE system can only give overall stress information along thickness. To investigate the stress distribution around TSV quantitatively, finite element method was employed and the simulation results were compared with that of experimental measurements. Through...
In this paper, a Micro-Infrared Photo-elasticity (MIPE) system was set up and applied to evaluate the residual stress of Si chip around TSV. The MIPE system can only give overall stress information along thickness. To investigate the stress distribution around TSV quantitatively, finite element method was employed and the simulation results were compared with that of experimental measurements. Through...
In this paper, influences of the initial stress on the surface micromachining silicon nitride pressure sensor was analyzed and discussed. The residual stress in the diaphragm is a major issue that makes significant difference on the performance of surface micro machined pressure sensors, such as warpage, micro-cracking, delamination, debonding, and nonuniform stress profile of the membrane. The pressure...
During laminating of Printed Circuit Boards (PCB) bending stresses in the embedded components can be generated due to pressure induced by the resin flow over them, which can lead to their fracture. In addition, the cooling of the PCB after curing of the resin can be even more important for the loading of the component. Here, the different coefficients of thermal expansion of the involved materials...
The optimization of grinding parameters for silicon wafers is necessary in order to maximize the reliability of electronic packages. This paper describes the work performed to simulate a back grinding process for Through Silicon Via (TSV) wafers using the commercial finite element code ABAQUS. The grinding of a TSV silicon wafer with a thickness of 120 μm mounted on a backing tape was simulated. The...
SiC is a candidate material for microelectromechanical and nanoelectromechanical systems, but the high residual stress created during the film grow limits the development of the material for these applications. To understand the stress relaxation mechanism in hetero-epitaxial 3C-SiC films, different micromachined free-standing structures have been realized. In this paper, assisted by finite-element...
The attachment of the silicon piezoresistive pressure sensor die to the substrate is one of the most critical steps in the production of highly accurate pressure sensor. In this paper, single parameter of the adhesive affecting the silicon piezoresistive pressure sensor's output characteristics has been studied. Shear strength of the adhesive with optimized parameters also has been evaluated. Material...
Since the thickness of the stacked silicon chips in 3D integration has been thinned to less than 100 ??m, the local thermal deformation of the chips has increased drastically because of the decrease of the flexural rigidity of the thinned chips. The clear periodic thermal deformation and thus, the thermal residual stress distribution appear in the stacked chips due to the periodic alignment of metallic...
Anodic bonding between glass wafer and Si wafer are widely used for micro-electro-mechanical system (MEMS) device fabrication and packaging due to the good bonding quality. The residual stress in the bonding interface, which results from the different thermal expansion coefficients of the two wafer materials, is depended on the bonding temperature. In MEMS piezoresistive pressure sensor, the residual...
Glass frit bonding is an important technology for the hermetical encapsulation of microsensors. During the manufacturing process or in application the bonding layer is repeatedly exposed to temperature changes. Therefore a meaningful stability assessment must include temperature dependent fracture toughness parameters. This work shows that the influence of temperature changes on the fracture toughness...
Since mechanical stress sometimes degrades both electronic functions and reliability of LSI chips, it is very important to control the residual stress in them to assure their highly reliable performance. The authors have already found that the distribution of the residual stress on a transistor formation surface of a chip changes significantly by changing the bump joint structure of packages or modules...
Since mechanical stress sometimes degrades both electronic functions and reliability of LSI chips, it is very important to control the residual stress in them to assure their highly reliable performance. The authors have already found that the local residual stress distribution on the transistor formation surface of LSIs changes significantly depending on their assembly structure. In addition, we...
In this paper, mechanical sensitivity and deflection of center is compared with thin planar membrane, thin corrugated membrane and thin corrugated membrane with metal layer. All models have been developed by realizing the initial stress. Finite element model simulation results show that mechanical sensitivity of corrugated membrane with metal layer is less than a sensitivity of corrugated membrane...
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