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The threshold switching characteristics of amorphous NbOx thin films is investigated with particular emphasis on temperature dependence of the switching characteristics. Threshold switching in this material is believed to result from a thermally-induced insulator-metal-transition (IMT) induced along a filamentary path by local Joule heating. Increasing the operating temperature is shown to lead to...
This paper presents SPICE modeling of Phase-change Random Access Memory (PCRAM). Different models of PCRAM have been already proposed but those models still lack capability to exactly model the behavior of PCRAM. In this paper we have introduced various physical parameters in the programming, to accurately model PCRAM behavior. The modeling of PCRAM cell has been done in Verilog-A and simulation results...
Resistance uniformities of Au/TiO2/Au memristors with oxide layer of 20-nm-thick, 30-nm-thick and 40-nm-thick have been study respectively. For each device, uniformity of high resistances is much higher than that of low resistances in cycles, no matter how thickness the oxide layer is. It indicates that conductive filaments based on oxygen vacancies are the dominated effect on resistive switching...
Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices. In this article, the performance of physical TiO2 and TaO2 nonvolatile memristive devices were compared in terms of switching speed, retention and endurance. TaO2 memristive devices have shown better endurance (108 times more switching cycles) and...
Nanoscale resistive switching devices are nowadays widely employed in applications of storage, logic and computing. The switching mechanism of metal oxide based devices is normally assumed to be the filamentary formation and rupture within the devices' active cores but the origin of filaments growth is still controversial. Previous research has already demonstrated that initial filamentary states...
We engineer a scalable and CMOS-friendly RRAM stack using down to 3nm ALD-based Ta2O5. The 20nm-sized TiN\Ta2O5\Ta device operated at 50µA exhibits ultra-fast write (∲5ns) at moderate voltage (<2V) with >109 write endurance. We also demonstrate excellent disturb and retention characteristics, which we relate to the appropriate tuning of the oxygen chemical-potential profile along the filament...
In this paper, 5Xnm cross point cell array for the low power ReRAM operation was developed with 1S1R cell structure. Through the optimization of both TiOx/TaOx based-1R and NbO2 based-1S stacks with TiN based-electrode, the world's first and best bipolar switching characteristics with the lowest operation current (20∼50uA) and sneak current (∼1uA) level were acquired.
Hybrid memory systems that incorporate Storage Class Memory (SCM) as non-volatile cache or DRAM data backup are expected to bolster system efficiency and cost because SCM promises higher density than DRAM cache and higher speed than the storage I/F. This paper demonstrates a Cu-based resistive random access memory (ReRAM) cell that meets the SCM performance specifications for a 16Gb ReRAM with 200MB/s...
Aostract is ReRAM mereasmgiy being developed for applications that require higher speeds and lower voltages than flash memory. We have found TaOx to have high performance and high reliability. However one of the phenomena observed in ReRAM is that each resistance after Set and Reset varies during every cycle. To stabilize resistive switching, the key is to limit these variations in resistance. In...
Effects of AlOx interfacial layer in the W/AlOx/TaOx/TiN structures have been investigated for the first time. This RRAM device shows long endurance of 106 cycles and good retention at 85°C for a low current compliance of 100 μA. A physics based simulation is studied to understand the set and reset mechanism of RRAM. The nature of ions migration, potential profile and temperature of filament during...
Development of nano-electromechanical relays (NEMRs) has led to a new focus on the thermal behavior at nano-scale contacts. The asperity-asperity contacts in NEMRs are susceptible to deformation and melting due to high pressures and temperatures at the contacting surfaces. Furthermore, because of their small size, these contacts are very difficult to analyze either experimentally or theoretically...
Nanoionic based resistive switching memory cells are nowadays being implemented in novel memory technology known as Conductive Bridging Random Access Memory. These memory cells, known as programmable metallization cells, are a promising memory technology not only due to their scaling potential but also because of characteristics such as non-volatility, low-power operation and speed. Resistance switching...
Memristor based logic and memories are increasingly becoming one of the fundamental building blocks for future system design. Hence, it is important to explore various methodologies for implementing these blocks. In this paper, we present a novel Complementary Resistive Switching (CRS) based stateful logic operations using material implication. The proposed solution benefits from exponential reduction...
The resistive switching behavior recently observed in silicon oxide (SiOX) makes this material attractive to embedded resistive random access memory (RRAM) fabrication due to process compatibility. In SiOX-based RRAM devices, switching mechanism is closely correlated with defects in the oxides. Therefore developing a method to control the defects is necessary for performance enhancement. In this paper,...
Al/Ta2O5/Pt RRAM cell was successfully demonstrated with stable bipolar switching. Band alignment for the structure of Al/Ta2O5/Pt was obtained using high-resolution X-ray photoelectron spectroscopy to investigate resistance switching behavior. Hole barrier heights of Ta2O5 on metals Pt and Al were extracted using core level and valence band spectra. The energy band alignments of Pt/TaOx and Al/TaO...
There has recently been increased interest in carbon-based resistive random-access (RRAM) memory. Carbon-based RRAM has the potential to scale to atomic dimensions, resulting in ultra-high-density and low-power memory. Here we report reversible unipolar resistance switching in hydrogenated amorphous carbon. The devices used in this study are fabricated using e-beam lithography with built-in series...
The linear relation between the on-resistance and compliance current in all resistive filamentary memory devices is valid over more than six orders of magnitude of resistance and current values for a multitude of various devices. The multilevel memory storage capability of a resistive cell relies on this remarkable relation characterized by a single constant K. In this work we show that the constant...
Resistive Switching Memories (RRAM) are one of the most promising candidates for future memory devices. Among other emerging RRAM concepts redox based resistive switches (ReRAM) attracted high attention to replace conventional FLASH technology. Here we show both on experimental and theoretical level new insights into nanoionic resistive switches. Of particular interest are recently discovered non...
While a wide bandgap material with poor mobility can saturate the output current, we demonstrate a way to achieve clear current saturation in the output characteristics using narrow-bandgap, high mobility graphitic-channels(Fig.4b, 4c) without hurting the mobility. Using gate engineering alone, we preserve the intrinsic narrow bandgap but locally cascade them along the channel. This filters intermediate...
In this paper, we review recent progresses on metal oxide resistive switching memory (RRAM). RRAM device design is explored from different aspects including oxide/electrode materials, uniformity issues, and scaling down to single-digit-nm regime. We studied the stochastic nature of resistive switching in metal oxide RRAM and revealed the physics behind switching parameter variations in HfOx-based...
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