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Silicon carbide MOSFETs coming from every manufacturer selling on the market have been simulated using models provided by the respective manufacturers. Simulation results have been compared to datasheet characteristics. Discrepancies were identified and their possible causes have been investigated. This has been complemented with an analysis of each model structure. For model improvement, several...
In this paper we enhance the published model of Abo-Elhadeed et al. based on an analytical model for undoped symmetric double gate MOSFETs introduced by Chenming Hu et al. Our proposed model includes the effects of the source/drain series resistances on the drain current and the effects of the gate tunneling current. The new model results were compared with a device simulator results to validate the...
In this paper we develop and test an analytical model for the total energy dissipation during the reset transition of an unipolar ReRAM device. To do so, we have considered the ReRAM as a memristor, and we have used a memristor model in the Charge-Flux space, instead of the usual current-voltage variables. The used model is very simple, with only three parameters, and provides accurate results. It...
Research the effect of dirt of quartz wafer on its electrical parameters. Experimental and theoretical analysis results show that the dirt of quartz wafer affects its mass, elastic modulus and vibration damping, and leads to increase of dynamic inductance, decrease of dynamic capacitance, reduction of resonant frequency and increase of resonance resistance. Effect of the dirt on the electrical parameters...
The pulsed power supply provides single or repeated frequency pulse energy for the load and needs the high-power switches to realize the control function. For the advantages of high reliability and small resistance, the semiconductor switch has been widely used in the pulsed power systems. The through-flow capability is an important technical parameter of the semiconductor switch, and is also the...
CBRAMs are a kind of RRAMs fabricated in the BEOL. They are a promising breakthrough for including permanent retention mechanisms (non-volatility) in embedded systems at low cost. Thus, they are becoming very interesting for the design community. For using this device in innovative circuits, a compact model is mandatory. In this paper, we propose a continuous physical compact model, implemented in...
A closed form linear electrothermal model for the PIN diode showing it frequency and temperature behavior is presented. The model uses PIN diode electrical parameters such as DC forward current, I-region thickness and the temperature-dependent mobility and carrier lifetime as parameters. Impedance behavior is shown over frequency and temperature as examples of the mathematical model and the model...
This paper presents a mathematical modeling of noise performance in source inductive degeneration topology which widely used in narrow band amplifier. The proposed model is conducted by utilizing a small-signal MOSFET model to generate the effective transconductance of circuits. The performance of noise figure can be preserved by selecting the device width while preserving a stable bias voltages and...
This paper describes an analytical study of synchronous logic gate design based on hybrid structure with MOS and resistive switching non-volatile memories (RS-NVMs). This type of structure allows ultra-low power consumption during power down, while often-used data are saved in RS-NVM cells. The parallel data sensing achieves low-power and fast computation time. The logic gate construction theory,...
The structure of the traditional two lithium batteries car charger was analyzed, car charger simulation model was created based on matlab, Combination of MOSFET equivalent circuit model, The equivalent circuit parameters affected to the MOSFET parallel flow was analyzed, Thus circuit suitable for car charger MOSFET parallel was designed, Gate resistance affected to the MOSFET parallel flow was analyzed...
A CMOS SCR compact model is developed for circuit simulation of ESD protection circuits. The model is comprised of coupled NPN and PNP transistors. A previously unnoted interaction between these transistors is described, resulting in improved agreement between simulation and measurement. This model addresses fundamental limitations of previous models, allowing for improved simulation accuracy, while...
A controllable modification of current feedback amplifier is presented in this contribution. In spite of classical conception, there are two current outputs of both polarities available and two buffered voltage outputs. The control of parameters consists of adjustable current gain between X and Z ports and intrinsic input resistance of current input (X). We proposed complex model of active element,...
A simulation framework that can comprehend the impact of material changes at the device level to the system level design can be of great value, especially to evaluate the impact of emerging devices on various applications. To that effect, we have developed a SPICE-based hybrid MTJ/CMOS (magnetic tunnel junction) simulator, which can be used to explore new opportunities in large scale system design...
Memristor was realized as physical device recently by HP labs, this discovery spurred a great interest in memristors as a fundamental electronic element. Memristor-based technology provides much better scalability, higher utilization when used as memory, and overall lower energy consumptions compared to traditional CMOS technology. The contribution of this paper is a detailed study of the non-linear...
A practical photovoltaic (PV) cells model is applied to make a comparison of different maximum power point tracking (MPPT) methods. Then, the paper improves the constant voltage tracking (CVT) method and puts forward a higher tracking precision MPPT method. Its engineering realizing means is specifically introduced. At last, the paper analyzes the influence of PV cells resistance to MPPT precision.
This paper tests the standard single-exponential model of the electrical characteristics of crystalline-Si photovoltaic devices, focusing on the (apparent) shunt current. Measured characteristics of illuminated polycrystalline-Si photovoltaic modules are modeled, and the apparent shunt current is analyzed. It is shown that an Ohmic-like behavior only takes place at voltages well below the maximum-power...
This research tests the standard one-diode model of a crystalline-Si photovoltaic cell, focusing on the physical accuracy. In particular, the (apparent) shunt resistance and the diode ideality factor are studied. Current-voltage characteristics of illuminated crystalline-Si photovoltaic modules are analyzed, and some limits of applicability of the standard model are given. Typical values of the ideality...
A new compact model of a cross-shaped horizontal integrated Hall-effect sensor is presented in this paper. Compared to existing models, the model reliability is improved, especially for designs in which the bias and the measurement circuits are not independent. The Hall device model uses six subcomponents, each modeling the non-linear resistance due to the sensor space charge region modulation and...
The SCR (silicon controlled rectifier) is one of the most efficient ESD protection devices. In order to improve the accuracy, convergence, scalability, and the parameter extraction and support time, a new model was developed. It aims to reach its goals through a stronger relation between the physical phenomena and its constitutive equations. The compact model was validated in CMOS 40 nm and CMOS 130...
A new model for calculating capacitive and resistive coupling is developed in this work and its implementation in commonly encountered practical cases is presented. The model is based on the geometry of the coupling mechanism and is therefore, in general, scalable and technology independent, while pure 3D effects, like capacitive coupling, are fast and accurately computed. The proposed model is validated...
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