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A multi-fidelity simulation-based workflow is presented as an efficient means of achieving interference-free design for electronic devices. By using desensitization, or “desense”, as the primary figure of merit, this work flow is achieved in three stages: 1) Identification of high-risk sources of radiation from the printed circuit board (PCB) using signal integrity (SI) simulation models that already...
Analog/Mixed-Signal (AMS) design and verification is dominated by modelling tasks. Model validity is crucial for the design's correctness but lacks a more formal criterion. We propose a novel model verification strategy to evaluate the coverage with respect to a given circuit. We define model-coverage based on the individual acceptance regions in parameter space. This imposes a measure that can be...
The alternate test paradigm has been proposed as a low-cost replacement to expensive and time consuming conventional specification tests of analog/radio-frequency (RF) integrated circuits. Feasibility of alternate tests may be compromised if the pertinent models that are used for the prediction of a circuit's performance are of poor accuracy. To construct accurate models across the whole design space,...
In this paper, a hybrid high-order behavioural model is proposed to mimic the response of strongly nonlinear unmatched RF transistors. In this model, a high-order Multi-Harmonic Volterra (MHV) behavioural model is used to predict the DC and fundamental frequency components of the output signal, while higher harmonic components are predicted by the Poly-Harmonic Distortion (PHD) model. The added coefficients...
This work presents a transformer-coupled class D switched-mode power amplifier using GaN-on-Si. An aggressive time-domain compatible, scalable, Angelov device model is used to accurately predict transient switched-mode device behavior. Simulation and measurement results report the GaN power device's intrinsic device efficiency to be 62% when operating as a switch at 2.25Gb/s. The 2-transistor PA topology...
A nonlinear lumped element transmission line (NLETL) that comprises a LC-ladder network where either the capacitors or inductors are nonlinear can be used to convert an input rectangular pulse to a series of RF pulses at the output. This article describes the implementation and demonstration of a high voltage nonlinear hybrid line (NLHL) where both the line components (inductor and capacitors) are...
This work investigates new implementations of the predictive alternate test strategy that exploit model redundancy in order to improve test confidence. The key idea is to build during the training phase, not only one regression model for each specification as in the classical implementation, but several regression models. We explore various options for implementing model redundancy, based on the use...
An innovative method to model, in the early design stage, the behavior of nonlinear analog circuits in the presence of noise is presented. The technique relies on Harmonic Balance analysis and the obtained model does not only efficiently predict the influence of a continuous wave disturbance, it may also be used to quickly estimate the device's behavior while being subjected to amplitude modulated...
This paper presents the characterization of intermodulation distortion in pnp SiGe HBTs on SOI. For the first time, measured results of pnp SiGe HBTs are compared against Spectre-based simulations using both HICUM and VBIC compact models, after the systematic selection of the appropriate corner models. It is shown that the HICUM model more accurately captures distortion effects than the VBIC model,...
A fundamental-only behavioral model is extracted from DUT-level swept power load-pull data that is capable of accurately predicting output power, gain and efficiency of high power RF transistors as a function of input drive level, load impedances, frequency and gate bias. The model is implemented with a sub-set of the X-parameter components and is easily ported to modern CAD tools as an X-parameter...
Accurate modeling of large-signal behavior of power amplifiers (PAs) is key in minimizing the number of design spins and design cycle time. This paper presents the 1- and 2-tone large-signal behavior of SiGe HBT with respect to power, frequency, bias, and transistor geometry. While the transistor's weak non-linearity is largely determined by the trans-conductance (Gm) and the quasi-static (QS) charge-storage...
This paper presents a new approach for controlling power consumption in RF devices. The approach is based on the definition of application-dependent performance modes for power hungry RF circuits and a logical control strategy that adjusts the power supply of each circuit to the mode required by the application. The control strategy uses embedded sensors, a recursive parameter identification approach...
A design procedure for generating predictive MOS-FET models is proposed. Due to evolving nature of future prediction, predictive models based on a certain prediction soon become absolute. We have therefore developed a design procedure for maintaining compatibility with most up-to-date prediction such as ITRS. The design procedure can generate predictive RF models for the first time. Details of the...
To solve the problem of low efficiency using physical model in circuit simulation, a surrogate Kriging model is introduced and discussed in this paper. Taking the example of an RF amplifier, contrast of effects of different regression and correlation models on the accuracy of Kriging model built is given. Based on analysis of the result, useful strategies for choosing optimal regression and correlation...
This paper presents a novel technique of modeling a radio frequency (RF) power amplifier (PAs) using polynomials with infinite impulse response (IIR) bases functions. Non-linear PA behavior, including both short-term and long-term memory effects, is described with very few parameters compared to existing Volterra series models. Moreover, the use of polynomials with IIR bases is far less computationally...
Correlation of IP3 in a pHEMT to the third derivative of Ids wrt Vgs, or Gm3 is addressed. A non-linear large-signal pHEMT model was developed based on the fitting RF Gm characteristics as well as IV/CV. Systematic extraction approach is described. In extraction, RF Gm fitting minimizes the errors between modelled and measured Gm3. Scale-ability in terms of DC, S-parameters and IP3 is demonstrated...
SoCs today rely heavily on behavioral models of analog circuits for Top Level Verification. The minimum modeling requirement is to model the functional behavior of the circuit. A lot of ongoing work is also focused on modeling analog circuits to predict the system performance of the SoC. This paper presents a methodology to enhance the quality of SoC verification by using a bottom up approach to verify...
A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signal conditions by exploiting a measurements setup based on LS-VNA.
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